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    IRHNJ597034 Price and Stock

    Infineon Technologies AG IRHNJ597034SCVB

    Power MOSFET, P Channel, 60 V, 21 A, 85 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ597034SCVB)
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    Infineon Technologies AG IRHNJ597034SCVA

    Power MOSFET, P Channel, 60 V, 21 A, 85 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ597034SCVA)
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    Infineon Technologies AG IRHNJ597034B

    Power MOSFET, P Channel, 60 V, 21 A, 85 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ597034B)
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    Infineon Technologies AG IRHNJ597034A

    Power MOSFET, P Channel, 60 V, 21 A, 85 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ597034A)
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    IRHNJ597034 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHNJ597034 International Rectifier -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package Original PDF

    IRHNJ597034 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JANSR2N7520U3

    Abstract: IRHNJC597034
    Text: PD-94608B IRHNJ597034 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 JANSR2N7520U3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ597034 IRHNJ593034 Radiation Level RDS(on) 100K Rads (Si) 0.085Ω 300K Rads (Si) 0.085Ω


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    PD-94608B IRHNJ597034 IRHNJ593034 JANSR2N7520U3 JANSF2N7520U3 MIL-PRF-19500/732 IRHNJC597034 conRHNJC597034 IRHNJC597034 PDF

    JANSR2N7520U3

    Abstract: No abstract text available
    Text: PD-94608B IRHNJ597034 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 JANSR2N7520U3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ597034 IRHNJ593034 Radiation Level RDS(on) 100K Rads (Si) 0.085Ω 300K Rads (Si) 0.085Ω


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    PD-94608B IRHNJ597034 JANSR2N7520U3 MIL-PRF-19500/732 IRHNJ593034 JANSF2N7520U3 IRHNJC597034 JANSR2N7520U3C JANSR2N7520U3 PDF

    IRHNJ597034

    Abstract: 435A Irf 1540 G IRHNJ593034
    Text: PD-94608A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597034 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHNJ597034 100K Rads (Si) 0.085Ω IRHNJ593034 300K Rads (Si) 0.085Ω ID -21A -21A SMD-0.5 International Rectifier’s R5 TM technology provides


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    PD-94608A IRHNJ597034 IRHNJ597034 IRHNJ593034 MIL-STD-750, MlL-STD-750, 435A Irf 1540 G PDF

    IRHNJ597034

    Abstract: MOSFET IRF 1540 IRHNJ593034
    Text: PD - 94608 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597034 60V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597034 100K Rads (Si) IRHNJ593034 300K Rads (Si) RDS(on) 0.06Ω 0.06Ω ID -22A -22A SMD-0.5 International Rectifier’s R5 TM technology provides


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    IRHNJ597034 IRHNJ597034 IRHNJ593034 MIL-STD-750, MlL-STD-750, MOSFET IRF 1540 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    FT0045A

    Abstract: No abstract text available
    Text: SSDI is proud to introduce four new radiation tolerant MOSFET products. All of these new devices feature rugged trench technology, low ON-resistance, and SEU / SEGR resistance to LET 38. TX, TXV, and S-level screening is available and based on MIL-PRF-19500. Screening flows are available on request. For more information or to request


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    MIL-PRF-19500. SFR9130S 100kRAD IRF9130 FT0042A SFF110P05J SFF110P05M SFF110P05S1 O-254 FT0045A PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


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    4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS PDF

    2N7520

    Abstract: 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/732B 23 April 2010 SUPERSEDING MIL-PRF-19500/732A 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


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    MIL-PRF-19500/732B MIL-PRF-19500/732A 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, 2N7520T3, MIL-PRF-19500. 2N7520 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL PDF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


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    94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


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    PDF

    IRHNJ5

    Abstract: No abstract text available
    Text: SRTF4655P Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SRTF465 5 | | | | | └ P _ └


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    SRTF4655P 100kRAD IRHNJ597034 SRTF465 FT0048A IRHNJ5 PDF

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


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    4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS PDF