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    JANSR2N7520U3

    Abstract: IRHNJC597034
    Text: PD-94608B IRHNJ597034 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 JANSR2N7520U3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ597034 IRHNJ593034 Radiation Level RDS(on) 100K Rads (Si) 0.085Ω 300K Rads (Si) 0.085Ω


    Original     		PDF PD-94608B IRHNJ597034 IRHNJ593034 JANSR2N7520U3 JANSF2N7520U3 MIL-PRF-19500/732 IRHNJC597034 conRHNJC597034 IRHNJC597034

    2N7520

    Abstract: 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/732B 23 April 2010 SUPERSEDING MIL-PRF-19500/732A 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/732B MIL-PRF-19500/732A 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, 2N7520T3, MIL-PRF-19500. 2N7520 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL

    JANSR2N7520U3

    Abstract: No abstract text available
    Text: PD-94608B IRHNJ597034 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 JANSR2N7520U3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ597034 IRHNJ593034 Radiation Level RDS(on) 100K Rads (Si) 0.085Ω 300K Rads (Si) 0.085Ω


    Original     		PDF PD-94608B IRHNJ597034 JANSR2N7520U3 MIL-PRF-19500/732 IRHNJ593034 JANSF2N7520U3 IRHNJC597034 JANSR2N7520U3C JANSR2N7520U3