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    MEMORY RAM 6116 Search Results

    MEMORY RAM 6116 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    MEMORY RAM 6116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P89C660

    Abstract: 89C662
    Text: P89C66x Microcontroller P89C660, P89C662, P89C664 Description The P89C66x, based on the 80C51 family, has up to 64 KB of Flash program memory and is set apart from other 80C51 derivatives with I2C and RAM capacity up to 2048 bytes. The P89C66x RAM to ROM ratio meets the designer’s


    Original     		PDF P89C66x P89C660, P89C662, P89C664 P89C66x, 80C51 611651/20K/FP/2pp/1200 P89C660 89C662

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9

    8403602ZA

    Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
    Text: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602ZA 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9

    89C662

    Abstract: P89C664HFBD P89C668 80C51 89C660 P89C660 P89C660HBA P89C660HBBD P89C660HFA P89C662
    Text: Philips Semiconductors P89C66x Microcontroller P89C660, P89C662, P89C664, P89C668 Description The P89C66x, based on the 80C51 family, has up to 64 KB of Flash program memory and is set apart from other 80C51 derivatives with I2C and RAM capacity up to 8 K bytes.


    Original     		PDF P89C66x P89C660, P89C662, P89C664, P89C668 P89C66x, 80C51 80C51 P89C66x 89C662 P89C664HFBD P89C668 89C660 P89C660 P89C660HBA P89C660HBBD P89C660HFA P89C662

    hl44

    Abstract: 87C51MB2 LPC764 PHILIPS REPLACEMENT PCA LPC762 PCA82C251 XAC37 80C31X2 diode A44 87C51MC2
    Text: Philips Semiconductors,The Innovation Leader in 80C51 Microcontrollers Part Number P8x Memory ROM OTP or Flash Timer/Counters RAM # PWM PCA WD I/O Serial Pins Interfaces A/D Bits Interrupts Ch Max Freq. Max at 6-clk/12-clk Temp. Package Options Special Features


    Original     		PDF 80C51 6-clk/12-clk 80C51) 87C51MB2 87C51MC2 8xC524 8xC528 8xC652 8xC654 8xC748 hl44 87C51MB2 LPC764 PHILIPS REPLACEMENT PCA LPC762 PCA82C251 XAC37 80C31X2 diode A44 87C51MC2

    ma 6116 f5

    Abstract: ma 6116 f6 HM1-65162/883
    Text: HM-65162/883 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced


    Original     		PDF HM-65162/883 MIL-STD883 HM-65162/883 ma 6116 f5 ma 6116 f6 HM1-65162/883

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9

    ma 6116 f5

    Abstract: HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b
    Text: HM-65162/883 TM 2kx8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced


    Original     		PDF HM-65162/883 MIL-STD883 HM-65162/883 ma 6116 f5 HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    memory 6116

    Abstract: ASIC 101 PCI33 X2P360 X2P560 X2P640 X2P720 X2P846 digital clock using logic gates
    Text: AMI Semiconductor XPressArray -II 0.15 m Structured ASIC XPressArray-II - Feature Sheet Key Features • Next-generation 0.15µm structured ASIC platform for highperformance 1.5V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages


    Original     		PDF 210MHz 500MHz 258Kbits 18Kbit 330MHz M-20623-003 memory 6116 ASIC 101 PCI33 X2P360 X2P560 X2P640 X2P720 X2P846 digital clock using logic gates

    Untitled

    Abstract: No abstract text available
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages


    Original     		PDF 210MHz 500MHz 332kbits 18kbit 330MHz

    mod 8 ring counter using JK flip flop

    Abstract: ega to vga circuits q 1257 5v constant power supply lob transistor BR 8772 BR 8050 D 555 design guide BT 4840 CD 4081 Cmos 2 input and gate IC cell phones
    Text: MF1567-01 STANDARD CELL / EMBEDDED ARRAY S1K70000 / S1X70000 Series 5V Tolerant DESIGN GUIDE NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF MF1567-01 S1K70000 S1X70000 mod 8 ring counter using JK flip flop ega to vga circuits q 1257 5v constant power supply lob transistor BR 8772 BR 8050 D 555 design guide BT 4840 CD 4081 Cmos 2 input and gate IC cell phones

    XC3S1000-FT256

    Abstract: XC3S1000-FG456 XC2VP30-FF896 XILINX/SPARTAN-3 XC3S200 XC2V3000-BG728 XC2VP4-FG456 XC3S200FT256 XC2V1000-FG456 XC2V3000-FG676 XC2VP20 fg676
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages


    Original     		PDF 210MHz 500MHz 332kbits 18kbit 330MHz XC3S1000-FT256 XC3S1000-FG456 XC2VP30-FF896 XILINX/SPARTAN-3 XC3S200 XC2V3000-BG728 XC2VP4-FG456 XC3S200FT256 XC2V1000-FG456 XC2V3000-FG676 XC2VP20 fg676

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    L6116PC85

    Abstract: No abstract text available
    Text: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The


    OCR Scan     		PDF L6116 IDT6116, CY7C128/CY6116 24-pin 24-pinPlastic 28-pin L6116PC85

    ic vertical la 78141

    Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
    Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices


    OCR Scan     		PDF CH-8953 ic vertical la 78141 IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram

    HM1-65162

    Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
    Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    OCR Scan     		PDF HM-65162 HM-65162 HM1-65162 HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA

    Untitled

    Abstract: No abstract text available
    Text: WE DSP32 Digital Signal Processor Features • 16-MHz and 25-MHz parts are available ■ 2048 bytes ROM, 4096 bytes RAM on-chip ■ Memory can be addressed as 8-, 16-, or 32-bits ■ Four 40-bit accumulators ■ Interfaces to a microprocessor without any


    OCR Scan     		PDF DSP32 16-MHz 25-MHz 32-bits 40-bit DSP32-SL DSP32-AL DSP32-DS 32-bit 16-bit

    IC SD 6109

    Abstract: No abstract text available
    Text: MITSUBISHI LSlS M5M467160/465160AJ,TP-5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT 4194304-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 16-bit dynamic RAMs, fabricated with the high Derformance CMOS process,and is ideal for large-capacity memory systems where high speed, low power


    OCR Scan     		PDF M5M467160/465160AJ 67108864-BIT 4194304-WQRD 16-BIT) 4194304-word 16-bit 41943Q4-WORD IC SD 6109

    48t02

    Abstract: mostek shift register 6116 EEPROM 28 PINS
    Text: 2K 8 ZERO PO W ER /T IM E K E E P E R RAM MEMORY CO M PO NENTS FEATURES □ Integrated Ultra Low Power SRAM, Real Time Clock, Crystal, Power-tall Control Circuit and Battery 1 c □ 24 A 6 2 C □ 23 *5 3 C □ 22 □ BCD Coded Year, Month, Day, Date, Hours, Minutes


    OCR Scan     		PDF MK48T02/12/03/13 MK48T02/12) MK48T03/13) MK48T 48t02 mostek shift register 6116 EEPROM 28 PINS

    MK48TO2-12

    Abstract: SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram
    Text: IffiEEHSEll COMPONENTS MK48T02/12 B -12/15/20/25 yr~i 2K X 8 Z E R O P O W E R TIM E K E E P E R RAM MEMORY COMPONENTS FEATURES □ Integrated U ltra Low Power SR AM , Real Tim e Clock, Crystal, Power-fail C ontrol C ircu it and B attery A7 1 c 3 24 Vcc A.


    OCR Scan     		PDF MK48T02/12 MK48T02: MK48T12: MK48TX2-12rmation MK48TO2-12 SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram

    MK48T

    Abstract: 6116 ram 2k using two 6116 RAM
    Text: M K 4 8 T 0 2 / 1 2 / 0 3 / 1 3 B 12/15/20/2 5 2K 8 ZERO PO W ER /T IM E K E E P E R RAM MEMORY COM PONENTS S' FEATURES □ Integrated Ultra Low Power SRAM , Real Tim e Clock, Crystal, Power-fail Control C ircu it and Battery □ BYTEW IDE R AM -like C lock Access


    OCR Scan     		PDF MK48T02/12/03/13 MK48T02/12) MK48T03/13) MK48T02/03: MK48T 6116 ram 2k using two 6116 RAM

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


    OCR Scan     		PDF L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25

    interfacing of 8257 devices with 8085

    Abstract: IC 7430 IC-7430 BPK-72 Bubble Memory 8085 microprocessor BPK72 7430E IC7406 8085 Manual 6116 interface 8085
    Text: in tJ APPLICATION NOTE AP-150 O ctober 1983 IN T E L C O RPO RATIO N, 1982 6-86 O C TO B E R 1983 O R D ER N U M B ER : 210849-002 AP-150 8085 TO BPK 72 INTERFACE INTRODUCTION Bubble Memory is quickly emerging as the preferred high density storage medium for a variety of microprocessor


    OCR Scan     		PDF AP-150 IMB-72 interfacing of 8257 devices with 8085 IC 7430 IC-7430 BPK-72 Bubble Memory 8085 microprocessor BPK72 7430E IC7406 8085 Manual 6116 interface 8085