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Renesas Electronics Corporation HM4-65162B/883 STANDARD SRAM, 2KX8, 70NS, CMOS, CQCC32 - Bulk (Alt: HM4-65162B/883)
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Avnet Americas	HM4-65162B/883	Bulk		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation HM1-65162B-9 - Bulk (Alt: HM165162B-9)
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Avnet Americas	HM1-65162B-9	Bulk		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Glenair Inc G1B36516-2B ADAPTER - Bulk (Alt: G1B36516-2B)
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Avnet Americas	G1B36516-2B	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor M1-65162B-5
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Bristol Electronics	M1-65162B-5		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor HM165162B-9 HM165162 - 2K X 8 ASYNCHRONOUS CMOS STATIC RAM '
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Rochester Electronics	HM165162B-9		1		1	1 $8.6 10 $8.6 100 $8.08 1000 $7.31 10000 $7.31	Buy Now

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65162B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
65162C Abstract: 65162 HM-65162 B-2206 Text: HM 65162 MATRA MHS 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 × 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL	Original	PDF	HM-65162 90LCC 65162C 65162 B-2206
65162 Abstract: HM65162 HM-65162 Text: HM65162 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL compatible and operate from single 5 V supply thus	Original	PDF	HM65162 HM-65162 65162 HM65162
TRANSISTOR B737 Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998	Original	PDF
P-Channel Depletion-Mode Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385	Original	PDF	2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
M65162 Abstract: t29 55v Text: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random	OCR Scan	PDF	HM-65162/883 HM-65162/883 100kHz M65162 t29 55v
MK48Z02 Abstract: M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP 24PIN CY7C128-45 Text: - 16 K X ¿&&ÍEH m % i t £t OC TAAC TCAC aax ns) (us) nMOS 'f S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) « TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN A M IDD aax (ibA)	OCR Scan	PDF	24PIN Am9128-15 Aa9128-20 HM65728N-2 HM65728N-5 HY61C16-45 HY61C16-55 IIY61C16-70 HY61C16A-25 HY61C16A-35 MK48Z02 M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP CY7C128-45
Untitled Abstract: No abstract text available Text: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.	OCR Scan	PDF	HM-65162 55/70/90ns 20/yA
Untitled Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR TS D É 4302271 0010714 b \| T-4 6 -2 3 -12 HARRIS H M - 6 5 1 6 2 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts D IP • Fast Access Tim e. 55/70/90ns Max. T O P VIEW	OCR Scan	PDF	M302271 T-46-23-12 HM-65162 55/70/90ns 50/iA 20/uA -550C TAVWH1221-
8403602JA Abstract: 8403606JA Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max	OCR Scan	PDF	HM-65162 HM-65162 8403602JA 8403606JA
TRANSISTOR ww1 Abstract: ww1 47 transistor VW-F10 a05111 Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL	OCR Scan	PDF	hm65162 HM-65162 MIL-M-38510H Sflbfl45b 0D074D5 00Q7431 TRANSISTOR ww1 ww1 47 transistor VW-F10 a05111
65162C Abstract: 8403602JA 8403606JA Text: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V	OCR Scan	PDF	HM-65162 65162C 8403602JA 8403606JA
HM6116LP-3 Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2 Text: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2	OCR Scan	PDF	HM6116FP-2 HM6116FP-3 HM6116FP-4 HM6116L-2 HM65728N-2 HM65728N-5 HY61C16-45 HY61C16-55 IIY61C16-70 HY61C16A-25 HM6116LP-3 HM6116LP-4 upd446 HM6116LP-2 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161
Untitled Abstract: No abstract text available Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL	OCR Scan	PDF	HM65162 HM-65162 Sabfl45b 0D074D5
HM-65162 Abstract: HM-65162-8 HM-65162B-8 HM-65162B-9 HM-65162C-8 HM-65162S-9 Text: a HM-65162 H a rris 2048 x 8 Asynchronous CMOS Static RAM Features P inouts DIP • Fast Access T im e . 5 5 /7 0 /9 0 n s Max. TO P VIEW • Low Standby C u rre n t. 50/jA M ax.	OCR Scan	PDF	HM-65162 55/70/90ns 50/jA 20//A TAVWLi12' HM-65162 HM-65162-8 HM-65162B-8 HM-65162B-9 HM-65162C-8 HM-65162S-9