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    MDS9651

    Abstract: Power MOSFET SO-8 Complementary N-P channel MDS965 PF3506 601ID 1S1020 82269
    Text: Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel • VDS = 30V ■ ID=7.2A ■ RDS ON


    Original     		MDS9651 MDS9651­ Power MOSFET SO-8 Complementary N-P channel MDS965 PF3506 601ID 1S1020 82269 PDF

    MDS9651

    Abstract: MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET
    Text: Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS ON <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent


    Original     		MDS9651 MDS9651­ MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET PDF

    MDS9651

    Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
    Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		MDS9651 MDS9651­ N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel PDF