Untitled
Abstract: No abstract text available
Text: MD-MDE012-0709 AML0603E CHARACTERISTICS Q DC [MHz] L[nH] Q [MHz] Typ. S.R.F. Toler Parts number Min. 100 Rated Resistance [MHz] -ance Current [ohm] [MHz] Typ. 100 100 800 1000 2000 [mA] Typ. AML0603E2N0*T 2.0 B,C,S 4.5 6.5 22 24 38 >10000 0.09 300 AML0603E2N2*T
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MD-MDE012-0709
AML0603E
AML0603E2N0
AML0603E2N2
AML0603E2N4
AML0603E2N7
AML0603E3N0
AML0603E3N3
AML0603E3N6
AML0603E3N9
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PDF
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AMF1608B2450A1T
Abstract: AMF1005B2450AT AMF1608B2450B1T 2400-2500MHz
Text: MD-MDE013-201212 Multilayer Chip BPF AMF1005B / AMF1608B Series Applications Features • Mobile phone Ultra Small Size and Low Profile 1.6mm（L）x0.8mm（W）×0.4mm（H） typ. W-LAN , Bluetooth , etc. 1.0mm（L）×0.5mm（W）×0.4mm（H） typ.
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MD-MDE013-201212
AMF1005B
AMF1608B
960MHz)
AMF1005B2450AT
4800-5000MHz)
7200-7500MHz)
1710-1990MHz)
2110-2170MHz)
AMF1005B5375AT
AMF1608B2450A1T
AMF1608B2450B1T
2400-2500MHz
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PDF
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AMB1005C2450Z10AT
Abstract: AMB1005C2450Z05AT
Text: MD-MDE014-0912 Multilayer chip balun AMB1005 series Features Applications Small and Low Profiles Low Insertion Loss 0.6dB typ. /C2450series RoHS Compliant Bluetooth and Wireless LAN module WiMAX and WiBro module. Dimensions (1) Unbalance Port
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Original
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MD-MDE014-0912
AMB1005
/C2450series)
AMB1005C2350Z05AT
AMB1005C2350Z10AT
AMB1005C2450Z05AT
AMB1005C2450Z10AT
AMB1005C2500Z05
AMB1005C2500Z10
AMB1005C2585Z05AT
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PDF
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radio specification
Abstract: AMF100540l1810AT AMF100540 AMF100540L2450AT 2400-2500MHz multilayer GHz
Text: MD-MDE015-1003 Multilayer Chip Low Pass Filters AMF1005L Series Features • Ultra Small Size and Low Profile - AMF100540: 1.0mm L x 0.5mm(W) x 0.4mm(H) typ. - AMF100550: 1.0mm(L) x 0.5mm(W) x 0.5mm(H) typ. • Low Insertion Loss • High Attenuation • RoHS Compliant
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MD-MDE015-1003
AMF1005L
AMF100540:
AMF100550:
770MHz)
806MHz)
1030MHz)
1429-1516MHz)
1710-2155MHz)
radio specification
AMF100540l1810AT
AMF100540
AMF100540L2450AT
2400-2500MHz
multilayer GHz
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PDF
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Untitled
Abstract: No abstract text available
Text: MD-MDE012-201212 Multilayer Chip Inductor AML0603E Series Q L[nH] Parts number Toler [MHz] -ance Min. 100 DC S.R.F. Q [MHz] Typ. Rated Resistance [MHz] Current [ohm] [MHz] Typ. 100 100 800 1000 2000 [mA] Typ. AML0603E2N0*T 2.0 B,C,S 4.5 6.5 22 24 38 >10000
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Original
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MD-MDE012-201212
AML0603E
AML0603E2N0
AML0603E2N1
AML0603E2N2
AML0603E2N3
AML0603E2N4
AML0603E2N5
AML0603E2N6
AML0603E2N7
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PDF
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AMF100540L
Abstract: AMF100540L2500AT AMF160840D87181AT S1156 AMF160840D87181BT AMF100540L0620AT AMF100540L2450AT 2400-2500MHz
Text: MD-MDE015-201212 Multilayer Chip LPF AMF1005 L / AMF1608D Series Features Applications • Ultra Small Size and Low Profile Mobile phone 1.0mm（L）x0.5mm（W）×0.4mm（H） typ. RF Module 1.0mm（L）×0.5mm（W）×0.5mm（H） typ. Antenna Switch Module
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MD-MDE015-201212
AMF1005
AMF1608D
806MHz)
AMF100540L0620AT
770MHz)
1429-1516MHz)
1710-2155MHz)
2400-2500MHz)
AMF100540L0870AT
AMF100540L
AMF100540L2500AT
AMF160840D87181AT
S1156
AMF160840D87181BT
AMF100540L2450AT
2400-2500MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727XFA 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727 XFA is 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CA727XFA
16M-WORD
72-BIT
MC-4516CA727
PD45128841
MC-4516CA727XFA-A75A
M01E0107
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Features Description EO L The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual
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Original
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256MB
HB52RF328GB-B
HB52RD328GB-B
HB52RF328GB
HB52RD328GB
HM522805BTB/BLTB)
144-pin
M01E0107
E0202H10
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PDF
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HM5425161BTT
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits
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128MB
HB54A1288KM
HB54A1288KM
256Mbits
HM5425161BTT)
E0190H10
HM5425161BTT
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 128MB Unbuffered DDR SDRAM DIMM EBD12UB8ALF 16M words x 64 bits, 1 Bank Description Features The EBD12UB8ALF is 16M words × 64 bits, 1 bank Double Data Rate (DDR) SDRAM unbuffered module, mounted 8 pieces of 128M bits DDR SDRAM (EDD1208ALTA) sealed in TSOP package. Read and
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128MB
EBD12UB8ALF
EBD12UB8ALF
EDD1208ALTA)
184-pin
M01E0107
E0216E10
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 128MB Registered DDR SDRAM DIMM EBD12RB8ALFA 16M words x 72 bits, 1 Bank Description Features The EBD12RB8ALFA is a 16M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 9 pieces of 128M bits DDR SDRAM (EDD1208ALTA) sealed in
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128MB
EBD12RB8ALFA
EBD12RB8ALFA
EDD1208ALTA)
M01E0107
E0212E11
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PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM sealed in
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Original
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EBS21RC2ACNA
EBS21RC2ACNA
168-pin
M01E0107
E0105E40
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PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM (EDS2502ACN) sealed in TCP package. This module
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Original
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EBS21RC2ACNA
EBS21RC2ACNA
EDS2502ACN)
168-pin
M01E0107
E0105E30
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Description Features The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual
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Original
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256MB
HB52RF328GB-B
HB52RD328GB-B
HB52RF328GB
HB52RD328GB
HM522805BTB/BLTB)
144-pin
M01E0107
E0202H10
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 64MB Unbuffered DDR SDRAM DIMM EBD64UB6ALF 8M words x 64 bits, 1 Bank Description Features The EBD64UB6ALF is 8M words × 64 bits, 1 bank Double Data Rate (DDR) SDRAM unbuffered module, mounted 4 pieces of 128M bits DDR SDRAM (EDD1216ALTA) sealed in TSOP package. Read and
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Original
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EBD64UB6ALF
EBD64UB6ALF
EDD1216ALTA)
184-pin
M01E0107
E0217E10
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PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET 256MB Registered DDR SDRAM DIMM EBD25RB4ALFB 32M words x 72 bits, 1 Bank Description Features The EBD25RB4ALFB is a 32M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 128M bits DDR SDRAM (EDD1204ALTA) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of
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256MB
EBD25RB4ALFB
EBD25RB4ALFB
EDD1204ALTA)
M01E0107
E0236E10
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PDF
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EBS52UC8APFA
Abstract: EBS52UC8APFA-75 EBS52UC8APFA-7A EDS2508APTA
Text: PRELIMINARY DATA SHEET 512MB Unbuffered SDRAM DIMM EBS52UC8APFA 64M words x 64 bits, 2 banks Description Features The EBS52UC8APFA is 64M words × 64 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 16 pieces of 256M bits SDRAM (EDS2508APTA) sealed in TSOP package.
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512MB
EBS52UC8APFA
EBS52UC8APFA
EDS2508APTA)
168-pin
38inch
133MHz
M01E0107
E0208E10
EBS52UC8APFA-75
EBS52UC8APFA-7A
EDS2508APTA
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PDF
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auwm
Abstract: MDE01
Text: h "7 > M n MDE01 $ /T r a n s is to r s V p n i t ; i ' 3- t / u z ^ h 7 > v 7 ^ 7 U Y Multi Device (Composite Transistor Array) •£ — $ F ÿ ' f 7 ./M otor Driver "7 • i^ ffi^ Ü E I/D im e n s io n s (Unit : mm) 7 > ÿ X Î ¿1 f ÿ 'Î A h V c e (sat) iO h- "7 > V X
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OCR Scan
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MDE01
200mA
auwm
MDE01
|
PDF
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TA6270F
Abstract: MDE01 I9 transistor
Text: Composite Transistor Arrays<Surface Mounted Types> R OH f l CO LTD SbE ]> • 7020^ 0 0 G7 D 0 1 Type -2 5 TA6270F Type MDE01 A /c ir c u it Vceo (V) -3 1 50 ~ -1 0 0 3 100 Diode Pd (mW) hFE 1.8 -5 0 - 0 .1 500 2,4,7 -1 0 -2 500 1 2 0 -5 6 0 3,5,6 10 500
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OCR Scan
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MF20pin
TA6270F
MDE01
TA6270F
MDE01
I9 transistor
|
PDF
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MDE01
Abstract: No abstract text available
Text: MDE01 Is "7 > V ^ £ /Transistors M n E 0 1 ti^ h 7 > '> '^ 7 K Multi Device Composite Transistor Array) i —£ K 7 7 /M otor Driver 1 • « * MF 20 pin — ’> 'C , "7 yfjÉH/'Dimensions (Unit : mm) ;u fÿ ÎJ I' h •7 > V J * £ ¿ f é V c e (sat) W I- 7 > v X
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OCR Scan
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MDE01
--100tiA
--10mA
100MHz
A/50mA
30MHz
200mA
MDE01
|
PDF
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TA6270
Abstract: TA6270F MDE02
Text: Composite Transistors Multi Devices •M F 2 0 SOP Types VCEO (V) Part No. -2 5 25 TA6270F Part No. MDE01 MDE02 Ic ( A / 1circuit) Rbe (KO) - 1 .5 1.5 None VqeO (V) Device No. (A) 1, 8 -5 0 -0 .1 2, 4, 7 -1 0 -2 3, 5, 6 10 2 -1 0 1, 4, 5, 8 2, 3, 6t 7 10
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OCR Scan
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TA6270F
150Diode
200200Vce
MDE01
MDE02
TA6270F
12PITCH
TA6270
MDE02
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors Multi Devices • M F 2 0 SOP Types Ic VcEO (V) Part No. -2 5 T A 6 27 0F - 1 .5 None 25 Pd (mW) ( A / c ir c u it ) R b e ( k f ì) l"*FE 8O O / T O T A L 1.5 -3 150— -1 0 0 100 3 D iode Part No. MDE01 MDE02 D evice No. VcEO (V)
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OCR Scan
|
MDE01
MDE02
|
PDF
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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OCR Scan
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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PDF
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2SC4649 N,P
Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Text: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products
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OCR Scan
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1k--200k
TA6270F
MDC01
MDC02
MDC03
MDC04
MDC06
MDE01
MDE02
MDG01
2SC4649 N,P
2SC40B
UMX13
DTA214YU
2S81260
DTA115UK
2sc5073
2sb1107
dta123y
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PDF
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