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    MCH185A4 Price and Stock

    ROHM Semiconductor MCH185A471JK

    CAP CER 470PF 50V C0G/NP0 0603
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    Bristol Electronics MCH185A471JK 6,305
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    Quest Components MCH185A471JK 12,290
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    MCH185A471JK 4,088
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    MCH185A471JK 3,168
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    Component Electronics, Inc MCH185A471JK 4,000
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    ROHM Semiconductor MCH185A4R7CK

    CAP CER 4.7PF 50V C0G/NP0 0603
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    Quest Components MCH185A4R7CK 22,500
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    MCH185A4R7CK 5,755
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    MCH185A4R7CK 3,037
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    MCH185A4R7CK 474
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    Component Electronics, Inc MCH185A4R7CK 4,000
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    ROHM Semiconductor MCH185A470JK

    CAP CER 47PF 50V C0G/NP0 0603
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    MCH185A470JK Reel 4,000
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    Quest Components MCH185A470JK 50,094
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    MCH185A470JK 11,520
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    MCH185A470JK 8,880
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    MCH185A470JK 3,136
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    MCH185A470JK 2,640
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    NexGen Digital MCH185A470JK 798
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    Component Electronics, Inc MCH185A470JK 13,220
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    ROHM Semiconductor MCH185A431JK

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    ROHM Semiconductor MCH185A430JK

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    MCH185A4 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MCH185A430JK ROHM Ceramic Capacitors, Capacitors, CAP CER 43PF 50V 5% NP0 0603 Original PDF
    MCH185A431JK ROHM Ceramic Capacitors, Capacitors, CAP CERM 430PF 5% 50V C0G 0603 Original PDF
    MCH185A470JK ROHM Ceramic Capacitors, Capacitors, CAP CER 47PF 50V 5% NP0 0603 Original PDF
    MCH185A471JK ROHM Ceramic Capacitors, Capacitors, CAP CERM 470PF 5% 50V C0G 0603 Original PDF
    MCH185A4R7CK ROHM Ceramic Capacitors, Capacitors, CAP CER 4.7PF 50V NP0 0603 Original PDF

    MCH185A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		PDF SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B

    MCH185A221JK

    Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
    Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits


    Original     		PDF AN-079 SGA-8543Z dev2450 2440MHz EAN-104851 MCH185A221JK MCH185A390JK ML200C PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS

    MCH185C332K

    Abstract: MCH155F103Z mch184cn224k MCH153F104Z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z

    rm73z1j000

    Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
    Text: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for


    Original     		PDF HFA3524EVAL AN9809 HFA3524 rm73z1j000 MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK

    MCH315A180J

    Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J
    Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients


    Original     		PDF 30ppm/ with61J 560pF MCH315A681J 680pF MCH315A821J 820pF MCH315A102J MCH315A122J MCH315A152J MCH315A180J MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J

    2052-1215-00

    Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
    Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low


    Original     		PDF AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093

    mch185cn153k

    Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		PDF MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		PDF NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC

    F18NJ

    Abstract: ROHM SOT89 MARKING 60-000346-000B ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECG099 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 2140 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 & 2140MHz 5.6dB Typical noise figure at 900MHz


    Original     		PDF ECG099 2140MHz 900MHz OT-89 ECG099 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 F18NJ ROHM SOT89 MARKING 60-000346-000B ECJ-1VF1A105Z

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec

    TAJB105KLRH

    Abstract: No abstract text available
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		PDF SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 TAJB105KLRH

    MCH185C122KK

    Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
    Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits


    Original     		PDF AN-080 SGA-9089Z 2440MHz EAN-105081 MCH185C122KK AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK

    CL10B104KONC

    Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
    Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		PDF AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200

    9-GHz

    Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 9-GHz TOP MARKING C1 ROHM C100 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm

    MCH185A050c

    Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J
    Text: 積層セラミックチップコンデンサ／Multi Layer Ceramic Chip Capacitors MCH15 Series（1005 Size）MCH18 Series（1608 Size） はんだ喰われ防止に、効果的なバリア層に優れた はんだ付け性のコーティング処理を施した電極構造を採用。


    Original     		PDF MCH15 MCH18 MCH15 1005size MCH18 1608size 110pF 4316D MCH185A050c MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J

    receiver strong schematic diagram

    Abstract: schematic diagram receiver satellite 0604HQ MCH155A180JK 0604HQ-2N6XJBC 0604HQ-6N8XJBC GRH708COG180J200PB MCH185A470JK MGA-71543 RO4350B
    Text: A 2.6-2.7 GHz Low Noise Amplifier Using MGA-71543 Application Note 5084 Introduction Schematic of a 2.6-2.7 GHz LNA This application note demonstrates a design of and performance obtainable from a 2.6-2.7 GHz LNA using Avago Technologies’ MGA-71543, optimized for low noise


    Original     		PDF MGA-71543 MGA-71543, MGA-71543 5989-1614EN receiver strong schematic diagram schematic diagram receiver satellite 0604HQ MCH155A180JK 0604HQ-2N6XJBC 0604HQ-6N8XJBC GRH708COG180J200PB MCH185A470JK RO4350B

    ROHM SOT89 MARKING

    Abstract: ECG009B-1000 ECG009 311 SOT89
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 ROHM SOT89 MARKING ECG009B-1000 311 SOT89

    16 pin 4x4 amplifier gsm

    Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		PDF ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z

    TAJB105KLRH

    Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
    Text: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &


    Original     		PDF AN-078 SXB-2089Z SXB-2089 450MHz 2140MHz TAJB105KLRH MCH185C122KK 1200pF MCH185A120JK MCH185A010CK tic 2160 LL1608-FSR27J MCH185A121JK ML200C an078 Sirenza AN-21

    TAJB105KLRH

    Abstract: SXB-2089Z GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C
    Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as


    Original     		PDF SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z CMOS180 PSF-S01-1mm EEF-101407 TAJB105KLRH GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C

    CL10B104KONC

    Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
    Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		PDF AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021

    4069 NOT GATE IC

    Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec

    KXN1332A

    Abstract: ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer
    Text: Using The HFA3524AEVAL Board Sem iconductor A p p lic a tio n N o te S e p te m b e r 1998 A N 9 8 0 9 .1 Author: Milutin Culibrk Introduction The HFA3524A is a highly integrated Dual Frequency Synthesizer ideally P - R I S M ) j ì j ì suited for use in communications


    OCR Scan     		PDF HFA3524AEVAL HFA3524A HFA3524, ConnectionsECU-V1H102KBV MCH185A5R6CK ERJ-2RKF10R0 ERJ-2RKF1210 ERJ-2RKF-20R0 KXN1332A ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer