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    MBR3100 Price and Stock

    onsemi MBR3100RLG

    DIODE SCHOTTKY 100V 3A AXIAL
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    DigiKey MBR3100RLG Reel 6,000 1,500
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    MBR3100RLG Cut Tape 629 1
    • 1 $0.63
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    • 1000 $0.31748
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    Avnet Americas MBR3100RLG Reel 16 Weeks 3,000
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    Mouser Electronics MBR3100RLG 872
    • 1 $0.58
    • 10 $0.548
    • 100 $0.379
    • 1000 $0.27
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    Arrow Electronics MBR3100RLG Cut Strips 1 16 Weeks 1
    • 1 $0.2145
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    Quest Components MBR3100RLG 9
    • 1 $0.4614
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    MBR3100RLG 520
    • 1 $0.769
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    Richardson RFPD MBR3100RLG 3,000
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    Avnet Asia MBR3100RLG 16 Weeks 3,000
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    Chip1Stop MBR3100RLG Cut Tape 1,240
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    • 10 $0.327
    • 100 $0.265
    • 1000 $0.227
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    onsemi MBR3100

    DIODE SCHOTTKY 100V 3A AXIAL
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    DigiKey MBR3100 Bulk
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    Bristol Electronics MBR3100 247
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    MBR3100 168
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    Quest Components MBR3100 202
    • 1 $0.3918
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    MBR3100 197
    • 1 $0.595
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    Rochester Electronics MBR3100 24 1
    • 1 $0.2048
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    onsemi MBR3100G

    DIODE SCHOTTKY 100V 3A AXIAL
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    DigiKey MBR3100G Bulk
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    Bristol Electronics MBR3100G 70 12
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    Quest Components MBR3100G 56
    • 1 $0.6
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    Rochester Electronics MBR3100G 1
    • 1 $0.2476
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    • 100 $0.2327
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    onsemi MBR3100RL

    DIODE SCHOTTKY 100V 3A AXIAL
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    DigiKey MBR3100RL Reel
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    MBR3100RL Cut Tape
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    Quest Components MBR3100RL 670
    • 1 $0.3918
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    • 100 $0.2612
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    Rochester Electronics MBR3100RL 8,863 1
    • 1 $0.2048
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    • 100 $0.1925
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    Diodes Incorporated MBR3100VRTR-G1

    DIODE SCHOTTKY 100V 3A DO214AC
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    DigiKey MBR3100VRTR-G1 Digi-Reel 1
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    MBR3100VRTR-G1 Cut Tape
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    MBR3100 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR3100 Diodes HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Original PDF
    MBR3100 Micro-Electro-Magnetical Tech 100 V, Schottky die Original PDF
    MBR3100 Motorola Axial Lead Rectifier Original PDF
    MBR3100 On Semiconductor Axial Lead Rectifier Original PDF
    MBR3100 On Semiconductor Axial Lead Rectifier Original PDF
    MBR3100 Microsemi Schottky Rectifier Scan PDF
    MBR3100 Motorola Switchmode Datasheet Scan PDF
    MBR3100 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 100V, 3A, Pkg Style Case 267-03 Scan PDF
    MBR3100-D On Semiconductor Axial Lead Rectifier Original PDF
    MBR3100G On Semiconductor 3A 100V Schottky Rectifier Original PDF
    MBR3100RL On Semiconductor SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Original PDF
    MBR3100RL On Semiconductor Axial Lead Rectifier Original PDF
    MBR3100RLG On Semiconductor 3A 100V Schottky Rectifier Original PDF
    MBR3100VP-E1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO27 Original PDF
    MBR3100VP-G1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO27 Original PDF
    MBR3100VPTR-E1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO27 Original PDF
    MBR3100VPTR-G1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO27 Original PDF
    MBR3100VRTR-E1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO214AC Original PDF
    MBR3100VRTR-G1 Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 100V 3A DO214 Original PDF

    MBR3100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RECTIFIER DIODES Motorola

    Abstract: MBR3100-D voltage rectifier diode motorola
    Text: MOTOROLA Order this document by MBR3100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR3100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    PDF MBR3100/D MBR3100 RECTIFIER DIODES Motorola MBR3100-D voltage rectifier diode motorola

    Untitled

    Abstract: No abstract text available
    Text: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,


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    PDF MBR3100

    MARKING CODE DO-214AC

    Abstract: Device marking code 27 DO-214AC
    Text: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100V VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C


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    PDF MBR3100 MBR3100 DS36956 MARKING CODE DO-214AC Device marking code 27 DO-214AC

    Untitled

    Abstract: No abstract text available
    Text: MBR 3100 SCHOTTKY DIE SPECIFICATION TYPE: MBR3100 RSingle □Dual Anode General Description: 100 V 3 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage


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    PDF MBR3100 25mil)

    MBR3100G

    Abstract: mbr3100rlg MBR3100 MBR3100RL
    Text: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original
    PDF MBR3100 MBR3100/D MBR3100G mbr3100rlg MBR3100 MBR3100RL

    MBR3100G

    Abstract: MBR3100 MBR3100RL MBR3100RLG
    Text: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original
    PDF MBR3100 MBR3100G MBR3100 MBR3100RL MBR3100RLG

    Untitled

    Abstract: No abstract text available
    Text: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100 VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C


    Original
    PDF MBR3100 MBR3100 DS36956

    MBR3100

    Abstract: MBR3100G MBR3100RL MBR3100RLG
    Text: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original
    PDF MBR3100 MBR3100/D MBR3100 MBR3100G MBR3100RL MBR3100RLG

    Untitled

    Abstract: No abstract text available
    Text: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original
    PDF MBR3100

    DIODE mbr3100

    Abstract: B3100 MBR3100 MBR3100RL
    Text: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,


    Original
    PDF MBR3100 MBR3100/D DIODE mbr3100 B3100 MBR3100 MBR3100RL

    Untitled

    Abstract: No abstract text available
    Text: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100 VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C


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    PDF MBR3100 DO-214AC DO-27 MBR3100 DS36956

    Untitled

    Abstract: No abstract text available
    Text: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original
    PDF MBR3100 MBR3100/D

    B3100

    Abstract: MBR3100 MBR3100RL
    Text: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original
    PDF MBR3100 r14525 MBR3100/D B3100 MBR3100 MBR3100RL

    MBR3100

    Abstract: MBR3100G MBR3100RL MBR3100RLG
    Text: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


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    PDF MBR3100 MBR3100/D MBR3100 MBR3100G MBR3100RL MBR3100RLG

    Taiwan Semiconductor

    Abstract: No abstract text available
    Text: Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR3100 Main Product Characteristics General Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in


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    PDF MBR3100 MBR3100 DO-214AC DO-27 Taiwan Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MBR370-MBR3100 3A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current MBR 370 380 390 3100 70 80 90 100 Unit


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    PDF MBR370-MBR3100 DO-201A MIL-PRF-19500,

    B3100

    Abstract: MBR3100 MBR3100RL external lead finish
    Text: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    PDF MBR3100 r14525 MBR3100/D B3100 MBR3100 MBR3100RL external lead finish

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    cree mc-e driver

    Abstract: DN06051 panasonic MCE NCP1014LEDR2GEVD Single-Stage Flyback NCP1014LEDR2GEVB Cree XP-E R4 application LED driver NCP1014LED Cree XLamp XP-E R4
    Text: DN06051/D Design Note – DN06051/D Improving the Power Factor of Isolated Flyback Converters for Residential ENERGY STAR LED Luminaire Power Supplies Device NCP1014 Application LED Driver Input Voltage 90 to 265 Vac Output Power Up to 8 Watts Topology Flyback


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    PDF DN06051/D NCP1014 NCP1014 cree mc-e driver DN06051 panasonic MCE NCP1014LEDR2GEVD Single-Stage Flyback NCP1014LEDR2GEVB Cree XP-E R4 application LED driver NCP1014LED Cree XLamp XP-E R4

    ru 94vo circuit

    Abstract: ATH15T033-9S transistor SMD t05 ATH15T033-9 PTH03010W TR-332 BSS138 diodes mtbf
    Text: ATH15T033 Series —3.3-V Input 15-A, 3.3-V Input Non-Isolated Wide-Output Adjust Power Module REVISION 00 3DEC2003 Features NOMINAL SIZE = • Up to 15-A Output Current • 3.3-V Input Voltage • Wide-Output Voltage Adjust (0.8 V to 2.5 V) • Efficiencies up to 95 %


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    PDF ATH15T033 3DEC2003) EN60950 ATH15T033-9S PTH03010W MBR3100 1-888-41-ASTEC ru 94vo circuit ATH15T033-9S transistor SMD t05 ATH15T033-9 PTH03010W TR-332 BSS138 diodes mtbf

    schematic diagram 48V solar charge controller

    Abstract: Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller
    Text: Design Note – DN06054/D Reference Design for Solar Power MPPT Controller Device Application Input Voltage NCP1294 Solar Street Lighting 12-24 V Output Voltage A 13.2V Output Current A Topology 2.0A Table 1: NCP1294 Output Statistics Characteristic Output Voltage


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    PDF DN06054/D NCP1294 NCP1294 schematic diagram 48V solar charge controller Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    MBR370

    Abstract: MBR390
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR370 MBR380 MBR390 MBR3100 A x ia l Lead R e c tifiers . . . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF MBR370 MBR380 MBR390 MBR3100