Untitled
Abstract: No abstract text available
Text: BUK7Y13-40B N-channel TrenchMOS logic level FET Rev. 01 — 24 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK7Y13-40B
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55b2
Abstract: No abstract text available
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y40-55B
55b2
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55B2
Abstract: MBL798
Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y19-55B
55B2
MBL798
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BUK9Y53-100B
Abstract: No abstract text available
Text: BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y53-100B
BUK9Y53-100B
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Untitled
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 01 — 3 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y14-40B
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75B2
Abstract: No abstract text available
Text: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y30-75B
75B2
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BUK9Y19-55B
Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B,115
Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y19-55B
M3D748
OT669
BUK9Y19-55B
BUK9Y19-55B Rev. 02
BUK9Y19-55B,115
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30B2 diode
Abstract: 30b4 diode
Text: BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9Y22-30B
30B2 diode
30b4 diode
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BUK9Y40-55B
Abstract: 03np80
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y40-55B
M3D748
OT669
BUK9Y40-55B
03np80
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Untitled
Abstract: No abstract text available
Text: BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9Y22-30B
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BUK9Y30-75B
Abstract: No abstract text available
Text: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 01 — 14 July 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y30-75B
M3D748
OT669
BUK9Y30-75B
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Untitled
Abstract: No abstract text available
Text: BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9Y07-30B
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Untitled
Abstract: No abstract text available
Text: BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y11-30B
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Untitled
Abstract: No abstract text available
Text: BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9Y07-30B
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LFPAK
Abstract: BUK7Y13-40B airbag
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 02 — 2 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK7Y13-40B
LFPAK
BUK7Y13-40B
airbag
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Untitled
Abstract: No abstract text available
Text: BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y53-100B
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