Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN3R0-30YLD
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motor driver full bridge mosfet 10A 100V
Abstract: Arm7 lpc2103 circuit diagram Brushed TO Brushless Converter circuit diagram 12V DC brushed MOTOR CONTROL MICROCONTROLLER 12v 10A dc motor mosfet driver ARM7 development kit ARM7 MICROCONTROLLER dc brushed motor 60v 12v brushless motor driver PWM motor control arm7
Text: NXP Mini ARM7/LFPAK motion-control development kit Quick, cost-effective development of brushed/brushless DC motor controllers Use this plug-and-play kit to develop high-performance motor controllers for brushed or brushless DC motors. The modular design supports power boards with various power ratings.
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8-/10-bit
RS-232,
PH20100S
motor driver full bridge mosfet 10A 100V
Arm7 lpc2103 circuit diagram
Brushed TO Brushless Converter circuit diagram
12V DC brushed MOTOR CONTROL MICROCONTROLLER
12v 10A dc motor mosfet driver
ARM7 development kit
ARM7 MICROCONTROLLER
dc brushed motor 60v
12v brushless motor driver
PWM motor control arm7
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PH2525L
Abstract: PH2625L PH5525L PH6325L TPS40071 LFPAK footprint NXP resistor
Text: NXP LFPAK MOSFETs PH2525L and PH5525L application 25-A POL converter with over 90% efficiency using LFPAK MOSFETs This small, low-cost design, which combines NXP MOSFETs in LFPAK packages with a PWM controller from Texas Instruments, uses industry-standard construction and operating conditions
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PH2525L
PH5525L
PH2525L
TPS40071
PH2625L
PH5525L
PH6325L
TPS40071
LFPAK footprint
NXP resistor
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Untitled
Abstract: No abstract text available
Text: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and
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MIFARE DESFire
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
MIFARE DESFire
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PSMN7R0-30YLC
Abstract: No abstract text available
Text: LF PA K PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
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PSMN7R0-30YLC
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PSMN6R0-30YL
Abstract: No abstract text available
Text: LF PA K PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN6R0-30YL
PSMN6R0-30YL
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MOSFET D340
Abstract: No abstract text available
Text: PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN014-40YS
MOSFET D340
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Abstract: No abstract text available
Text: PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 02 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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4C530
Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
Text: PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN4R5-30YLC
4C530
003A MARKING
PSMN4R5-30YLC
PSMN4R5
4C530L
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sot669
Abstract: PH5330E 12334
Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features
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PH5330E
M3D748
OT669
sot669
PH5330E
12334
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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Untitled
Abstract: No abstract text available
Text: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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Abstract: No abstract text available
Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K17-60E
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 21 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN030-60YS
Abstract: No abstract text available
Text: PSMN030-60YS N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET Rev. 02 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN030-60YS
PSMN030-60YS
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Untitled
Abstract: No abstract text available
Text: PSMN5R8-40YS N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: LF PA K5 6D SOT1205 LFPAK56D; Reel pack, SMD, 7" Q1/T1 Standard product orientation Orderable part number ending, 115 or X Ordering code 12NC ending 115 Rev. 1 — 13 August 2013 Packing information 1. Packing method Printed plano box Barcode label Reel
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OT1205
LFPAK56D;
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PSMN012-100YS
Abstract: No abstract text available
Text: PSMN012-100YS N-channel 100V 12mΩ standard level MOSFET in LFPAK Rev. 04 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN012-100YS
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Untitled
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Text: PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN5R8-40YS
Abstract: No abstract text available
Text: PSMN5R8-40YS N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Rev. 01 — 8 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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BUK9Y08-30B
Abstract: sot669 package 27 55b BUK9Y19-55B LFPAK footprint SOT669 BUK9Y11-30B BUK9Y30-75B BUK9Y40-55B BUK7Y09-40B
Text: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, Philips’ new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal
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Text: LF PA K PSMN013-30YLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 29 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
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