a7p marking
Abstract: No abstract text available
Text: • ^53*131 QQE43b7 OSE « A P X N AMER PHILIPS/DISCRETE BAV99 L7E D ; v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.
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QQE43b7
BAV99
BAV99
BAW62.
a7p marking
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Untitled
Abstract: No abstract text available
Text: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope
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BAV23S
BAV23S
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a7p marking
Abstract: marking A7p sot23 a7p
Text: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.
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BAV99
BAV99
243pF
510MO
BAW62.
a7p marking
marking A7p
sot23 a7p
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diode marking 226
Abstract: DIODE B21 625 diode BY 225 diode philips bav23s L31 diode MBB057 marking RAV j353 diode BY 226
Text: ^53^31 0024352 b21 M I A P X P h ilip s S e m ico n d uctors Product spe cification Silicon planar epitaxial high-speed diode N AMER DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The
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BAV23S
BAV23S
100hA
diode marking 226
DIODE B21
625 diode
BY 225 diode
philips bav23s
L31 diode
MBB057
marking RAV
j353
diode BY 226
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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DBAT54A
Abstract: MBB057 lp "sot23" L44R Ns 206 ns-206 BAT54A BAT54C BAT54S MARKING SOT23-3 LF
Text: •I bbS3T31 0D2M3M2 7Ö5 H A P X N AUER PH ILIPS/DISCRETE b?E D BAT54A; C; S SCHOTTKY BARRIER DIODE Silico n e p itaxia l S c h o ttk y B arrier d ouble diodes w ith an integrated p-n ju n c tio n p ro te c tio n ring in a m ic ro m in ia tu re SO T-23 envelope intended fo r surface m ou n tin g .
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bbS3T31
BAT54A;
OT-23
DBAT54A
MBB057
lp "sot23"
L44R
Ns 206
ns-206
BAT54A
BAT54C
BAT54S
MARKING SOT23-3 LF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The device is designed for switching and
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BAV23S
BAV23S
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