Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MAY29 Search Results

    SF Impression Pixel

    MAY29 Price and Stock

    VPG Transducers MAY29K400B

    RES 29.4K OHM 0.1% 0.3W RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAY29K400B Bulk 20
    • 1 -
    • 10 -
    • 100 $12.704
    • 1000 $12.704
    • 10000 $12.704
    		Buy Now
    Avnet Americas MAY29K400B Bulk 20
    • 1 -
    • 10 -
    • 100 $7.446
    • 1000 $5.7232
    • 10000 $5.7232
    		Buy Now

    Vishay Precision Group Inc MAY29K400B

    Metal Foil Resistors - Through Hole MAY29K400B 2.5 PPM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAY29K400B
    • 1 $14.71
    • 10 $13.38
    • 100 $11.23
    • 1000 $10.77
    • 10000 $10.77
    		Get Quote

    MAY29 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MAY29K400B Vishay Foil Resistors Resistors - Through Hole Resistors - MAY29K400B 2.5 PPM Original PDF

    MAY29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIGE SEMICONDUCTOR 2527l

    Abstract: schematic diagram power amplifier free 2527L se2597l QAD-00044 se2597 QAD-00045 SIGE 2527l SE2597L-R SE2597L-EV1
    Text: SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE2597L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power


    Original     		PDF SE2597L SE2597L IEEE802 DST-00211 May-29-2009 SIGE SEMICONDUCTOR 2527l schematic diagram power amplifier free 2527L QAD-00044 se2597 QAD-00045 SIGE 2527l SE2597L-R SE2597L-EV1

    TRANSISTOR MARKING YB

    Abstract: BFP405F marking al
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP405F marking al

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR

    se2597l

    Abstract: SE2597L-R SIGE SEMICONDUCTOR se2597
    Text: SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description ƒ ƒ ƒ The SE2597L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power


    Original     		PDF SE2597L SE2597L IEEE802 DST-00211 May-29-2009 SE2597L-R SIGE SEMICONDUCTOR se2597

    Untitled

    Abstract: No abstract text available
    Text: FemtoClock NG Crystal-to-LVCMOS/LVTTL Clock Synthesizer ICS840N021I DATA SHEET General Description Features The ICS840N021I is a LVCMOS/LVTTL clock synthesizer designed for Ethernet applications. The device generates a 125MHz clock signal from a 25MHz crystal with excellent phase jitter performance.


    Original     		PDF ICS840N021I 125MHz 25MHz

    P2003EV

    Abstract: P2003 nikos 10 35 SOP DIODE Transistor 9A Niko Semiconductor p20 p-Channel Logic Level Enhancement Mode niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM P2003EV Mode Field Effect Transistor SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 20mΩ -9A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2003EV May-29-2004 P2003EV P2003 nikos 10 35 SOP DIODE Transistor 9A Niko Semiconductor p20 p-Channel Logic Level Enhancement Mode niko-sem

    S3CC9

    Abstract: s3cc9gc S3FC9 S3CC9nc 0x811 OPENice-C3200 s3cc9tc S3CC9EB Calm16 s3cc
    Text: SWL Release Note: CalmSHINE16 V1.56f Release History RN_SWL_AIT_CalmSHINE16_Release_History_080529 Title Keywords Abstract Release Note: CalmSHINE16 V1.56f CalmSHINE16, V1.56f This document is the release note of CalmSHINE16 V1.56f System LSI Division, Semiconductor Business


    Original     		PDF CalmSHINE16 CalmSHINE16, Calmlib16 S3CC9 s3cc9gc S3FC9 S3CC9nc 0x811 OPENice-C3200 s3cc9tc S3CC9EB Calm16 s3cc

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    MagnaChip Semiconductor

    Abstract: HV7131R dcf CLOCK HV7131 magnachip image sensor HV7131R cmos image sensor magnachip image sensor
    Text: HV7131R Confidential CMOS Image Sensor HV7131R MagnaChip Semiconductor Ltd Version 1.7 This document is a general product description and is subject to change without notice. MagnaChip Semiconductor Ltd. does not assume any responsibility for use of circuits described and no patent


    Original     		PDF HV7131R 2002-December-24 2002-December-30 2003-March-12 10-bit May-29 15Floor, MagnaChip Semiconductor HV7131R dcf CLOCK HV7131 magnachip image sensor HV7131R cmos image sensor magnachip image sensor

    Untitled

    Abstract: No abstract text available
    Text: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLE, 2 PLCS SEE ORDERING CODE 1 PLASTIC RIBS PREVENT ACCIDENTAL CONTACT DAMAGE IF WRONG PLUG IS USED. 24.00 .945 18.00±0.25 .709±.010 DESCRIPTION, ECN, EAR NO. DATE APP'D B PROPOSAL DRAWING EAR 14084


    Original     		PDF MAY29/12 JUL24/12 P-MRJR-33XX-X1

    Untitled

    Abstract: No abstract text available
    Text: T- 2 . 3 - 0 1 SANSHA ELECTRIC MFC CO SbE D • 7111243 00005*11 837 ■SEMJ □CC6 MODULES - DR150AA PR E L IM IN A R Y ■ MAXI MUM R A T I N G S _ Unless oHurviM T j»25C Ratings . Symbol Unit Itea DF150AA180 DF150AA120


    OCR Scan     		PDF DR150AA F5A10 AY-29-

    rb 503

    Abstract: No abstract text available
    Text: 1. M e c h a n i c a l D im e n s i o n s : 2 . S ch e m atic: c 2,0Max D 0.1 5 o- 3. E l e c t r i c a l S p e c i f i c a t i o n : INDUCTANCE: 3.5uH±20% @100KHz 0.1V TOP VIEW SIDE VIEW DCR: 503 mOhms Typ Isal: 1.82Adc Max, 30% drop in Inductance Irms: 1,73Adc Max, based on 40% temp rise


    OCR Scan     		PDF 100KHz 82Adc 73Adc MIL-STD-202G, UL94V-0 E151556 -l-125 rb 503

    DMC20481

    Abstract: 1S250 DMC20481 drawing 1S16 1S63 2X24 DMC20481NYU-LY-ACE-BG DMG20481NYU-LY-ACE-BG NTD-7141 UE-31010D
    Text: First Edition Aug 31,2000 LCD Module Technical Specification Final Revision TypeNo. DWIC20481NYU-LY-AC E-BG Approved by Production Div Û-Checked by (Quality Assurance Div) Checked by (Design Engineering Div) Prepared by (Production Div) Table of Contents


    OCR Scan     		PDF DMC20481NYU-LY-ACE-BG 1S250 250CU500 500C1S1000 14TSWA MAY29 UE31010D DMC20481 1S250 DMC20481 drawing 1S16 1S63 2X24 DMG20481NYU-LY-ACE-BG NTD-7141 UE-31010D