STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Untitled
Abstract: No abstract text available
Text: WT9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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WT9435M
WT9435M
18-Jan-07
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WT9435
Abstract: STM9435 WT9435M
Text: WT9435M Surface Mount P-Channel Enhancement Mode MOSFET 8 7 D S 2 DRAIN CURRENT -4.8 AMPERS D S 1 P b Lead Pb -Free 6 D 3 S 5 D 4 G DRAIN SOUCE VOLTAGE -30 VOLTAGE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <55 mΩ @VGS =-10V R DS(ON) <85 m Ω@VGS =-4.5V
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WT9435M
01-Jul-05
WT9435
STM9435
WT9435M
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EFD34
Abstract: DS161R Motor Control Center wiring diagram abb TFK catalog EX-88 WESTINGHOUSE motor life line westinghouse mcp breaker TFK 543 TC236
Text: Industrial Control & Circuit Breakers Section C Innovative, intelligent NEC and IEC solutions safely and efficiently control power and protect circuits in explosive, wet, and corrosive environments worldwide. New Products in the Control Product Line Section
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ACE20
EFD34
DS161R
Motor Control Center wiring diagram abb
TFK catalog
EX-88
WESTINGHOUSE motor life line
westinghouse mcp breaker
TFK 543
TC236
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acp ca14
Abstract: CA14V15 MCA14 catalogue of torque switch ACP ROTARY SWITCH ca14v acp ca9
Text: COM COM CA6 // COM CA9 // COM CA14 COM MCA9 // COM MCA14 Rotary Switches 66 | www.acptechnologies.com | COM COM CA6 // COM CA9 // COM CA14 COM MCA9 // COM MCA14 ACP’s Rotary switches are based on the design of the potentiometers: plastic housing with protection type IP 5 dustproof . They have one input and two possible outputs. The conmuting angle between outputs can be customized.
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MCA14
COMCA14PV15
CA14V15,
acp ca14
CA14V15
MCA14
catalogue of torque switch
ACP ROTARY SWITCH
ca14v
acp ca9
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TRANSISTOR bHrt
Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE
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STT3PF20V
OT23-6L
TRANSISTOR bHrt
transistor 9a2a
ga8c
STT3PF20V
bhrt
transistor a6 s
STT3PF20
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ca6vsmd
Abstract: CA6V CA9MH CA14PH2 CA9V10 HA5 marking code At ACP we have a dream ca6 smd transistor lm 38dt thumbwheel Potentiometers
Text: The world we have is the result of our way of thinking Albert Einstein | www.acptechnologies.com | 01 02 | www.acptechnologies.com | Nobody would have heard of David and Goliath’s story if the giant had won. Often, minimum is maximum. Although our imagination
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UAA 190
Abstract: transistor 9a2a STT3PF20V
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET VDSS TYPE STT3PF20V • ■ ■ ■ !ÃW RDS on ID 1Ã!ÃWÃ5#$W !!Ã6 1Ã!$ÃWÃ5!&W TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE
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STT3PF20V
OT23-6L
UAA 190
transistor 9a2a
STT3PF20V
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STK 6024
Abstract: CA9MH acp ca14 ca6 smd transistor SMD CA6 220 k ohm potentiometer ca14nh acp ca14/ce14 Potentiometer SMD CA6xv5
Text: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD
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MCA14
MCE14
MCA-14
MCE-14
MCA-14
M10x0
STK 6024
CA9MH
acp ca14
ca6 smd transistor
SMD CA6
220 k ohm potentiometer
ca14nh
acp ca14/ce14
Potentiometer SMD
CA6xv5
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Untitled
Abstract: No abstract text available
Text: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD
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MCA14
MCE14
MCA-14
MCE-14
MCA-14
M10x0
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3055VL
Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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MTD3055VL
MTD3055VL
O-252
3055VL
a9hv
transistor WT9
u6 transistor
AYRA
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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fairchild NDS
Abstract: marking w66
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
fairchild NDS
marking w66
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Untitled
Abstract: No abstract text available
Text: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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9959
Abstract: No abstract text available
Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
9959
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4410DY
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9959
Abstract: No abstract text available
Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9410DY
9959
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Si4936DY
Abstract: fairchild NDS 9959
Text: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4936DY
fairchild NDS
9959
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Untitled
Abstract: No abstract text available
Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
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Si9955DY
Abstract: No abstract text available
Text: Si9955DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
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Untitled
Abstract: No abstract text available
Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9945DY
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Top side marking AHQ
Abstract: Si4953DY
Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
Top side marking AHQ
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Untitled
Abstract: No abstract text available
Text: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si9953DY
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Untitled
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC 3 flE D G 0 0 2 3 QS 1 B M R N .-ftt'ir REPLACES: WT9C$G24 1 MEG X 8 DRAM FAST PAGE M O D E FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon gate process
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OCR Scan
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30-pin
1400mW
512-cycle
T-46-23-17
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