Fuji Electric SM
Abstract: No abstract text available
Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG801C09R
Fuji Electric SM
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PDF
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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PDF
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Untitled
Abstract: No abstract text available
Text: _ BF970 VIS HAY Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50
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BF970
BF970
20-Jan-99
BF970_
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PDF
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MT47H128M8CF-25
Abstract: 8 resistor array 10k smd 103
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT47H128M8
MT47H64M16
18-compatible)
8192-cycle
09005aef840eff89
MT47H128M8CF-25
8 resistor array 10k smd 103
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT47H256M8
MT47H128M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef8441c566
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PDF
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Untitled
Abstract: No abstract text available
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT47H128M8
MT47H64M16
84-ball
60-ball
DDR2-800)
DDR2-667)
09005aef85a711f4
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PDF
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Untitled
Abstract: No abstract text available
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT47H128M8
MT47H64M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef840eff89
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PDF
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TRA1
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997
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EP05Q04
OD-123
bblS123
TRA1
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PDF
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Theta JC of FBGA
Abstract: 256MbDDR2
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
18-compatible)
8192-cycle
09005aef8117c187
256MbDDR2
Theta JC of FBGA
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PDF
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BT 742
Abstract: DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
60-ball
84-ball
DDR2-667)
DDR2-533)
BT 742
DDR2 2gb x16 industrial
DDR2 x16
vm 256MB DDR 400
MT47H
DDR2 SDRAM Meg x 16 x 16 banks
led MR11
MT47H16M16
DDR2-400
DDR2-533
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PDF
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LAMBDA over Voltage
Abstract: CSA950 75KVA
Text: ZWD75-SERIES Dual output 51W ~ 63W DENSEI-LAMBDA Model name ZWD 75-0524 Output voltage: 0512:5V, 12V 0524' 5V 24V Name of series Output power: 75W at peak PC Board Type Power Supply • Features • ce marking (Low Voltage Directive) • • • • +5V output for logic, +12/24V output for mechanical driving
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ZWD75-series
12/24V
100/200VAC,
132VAC
265VAC
440Hz)
330VDC
LAMBDA over Voltage
CSA950
75KVA
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PDF
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marking WMM
Abstract: WS-002
Text: RoHS COMPLIANT RS CUSTOMER: P /N : 3 0 5 -5 9 8 REV. . APPROVED REVISIONS BY: REV. DESCRIPTION A 2010±50 DATE A BLUE NOTES: 1. 2. G R N /Y E L -c BROWN - 4 - 0 y 3. Z0680140 Ü R ^ 18X 15 II^EIg Pantone 185 Ä|/Jvg MARKING: R Hfifc ! 305598 10A 250V- Power Cord
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Z0680140
300dpi)
WS-002
H05VV-F
ftffll28A
marking WMM
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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512Mb:
MT47H128M4
MT47H64M8
MT47H32M16
84-ball
60-ball
09005aef85651470
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PDF
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LTF3216L
Abstract: FR90A LTF3216L-F2R4G LTF3216L-FR90G LTF3216L-F1R3G HP8719D LTF3216L-FR90gl FR90
Text: TYPE 54 Multilayer Chip Low-Pass Fitter LTF3216L-F Series 7 8tl * y r*? i I:' TYPE LTF3216L-F Series L INPUT MARKING TOKO NUMBER 2R4 ¡D IM E N S IO N S / L mm W (mm) T (mm) a (mm) b (mm) 3.2±0.3 1.6 + 0.3 1. 4 + 0.2 0.5+ 0.3 0.8 ±0.3 Top View Side View
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LTF3216L-F
800MHz
500MHz
LTF3216L-F
LTF3216L-FR90G
LTF3216L-F1
LTF3216L-F2R4G
LTF3216L
FR90A
LTF3216L-F1R3G
HP8719D
LTF3216L-FR90gl
FR90
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PDF
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256Mb
Abstract: DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
60-ball
84-ball
DDR2-667)
DDR2-533)
256Mb
DDR2-400
DDR2-533
DDR2-667
MT47H16M16
MT47H32M8
MT47H32M8BP-3
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PDF
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access
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OCR Scan
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MT8C8024
100ns
120ns
30-pin
MT8C8024
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 32 Meg x 4 x 8 banks x 2 ranks – 16 Meg x 8 x 8 banks x 2 ranks
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Original
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MT47H512M4
MT47H256M8
63-ball
DDR2-800)
DDR2-667)
DDR2-533)
09005aef8266acfe
MT47H512M4
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PDF
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u68a equivalent
Abstract: MT47H128M8HQ-3
Text: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT47R256M4
MT47R128M8
MT47R64M16
18-compatible)
8192-cycle
09005aef82b91d01
u68a equivalent
MT47H128M8HQ-3
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PDF
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MARKING CODE EA1
Abstract: A-185 ERB93-02 T930 marking R810
Text: ERB93-02 i ,5A * ± 'J : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER • S H : : Features •te V F ■i^Tjv : Marking Low V F • X < •y ^ y ^ f c T - K d r '^ t t U j S v .' * 5 - 3 - K:H Super high speed sw itch in g . Color code : Silver High reliability by planer design.
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OCR Scan
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ERB93-02
I95t/R89)
MARKING CODE EA1
A-185
T930
marking R810
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks
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Original
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MT47H1G4
MT47H512M8
63-ball
DDR2-800)
DDR2-667)
DDR2-533)
09005aef8227ee4d
mt47h1g
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PDF
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jeida dram card 5v
Abstract: jeida dram 88 pin 88 pins dram card
Text: M I in P r iM M T16D 88C 232 2 MEG x 32, 4 MEG x 16 IC DRAM CARD ^ IC DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Part Number Example: MT16D88C232-6
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88-pin
128ms
jeida dram card 5v
jeida dram 88 pin
88 pins dram card
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PDF
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MARKing l4T
Abstract: T460 t930 ERA91-02 mat03
Text: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê
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ERA91
I95t/R89)
MARKing l4T
T460
t930
ERA91-02
mat03
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PDF
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CB903-4
Abstract: ML marking rft t-200
Text: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver
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OCR Scan
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CB903-4
17-3-K
1504C
ML marking
rft t-200
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PDF
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Untitled
Abstract: No abstract text available
Text: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features
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OCR Scan
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BFP181T/BFP181TW/BFP181TRW
BFP181TW
BFP181TRW
BFP181T
20-Jan-99
BFP181T/BFP1hay
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PDF
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