marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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t06 marking sot23
Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W
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2PA1576Q
SC-70
BC808W
OT323
2PA1576R
BC808-16
2PA1576S
BC808-16W
t06 marking sot23
BC857 3ft
marking 6Ct SOT23
SOT89 marking cec
marking da sot89
MARKING BL SOT89
SOT23 "Marking Code" t04
SOT89 MARKING CODE
marking t04 sot23
marking 1G SOT23
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ceag ghg 122 3121
Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money
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ambitious531
03/SL
D-69412
ceag ghg 122 3121
ceag ghg 534
ceag ghg 534 2506
crouse-hinds GHG 960 663
B0708
CEAG PTB 00 ATEX 3108
ceag ghg 412
ceag ghg 543
ceag GHG 543 2306
Ex-92
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t2d 82
Abstract: T2D 79 marking T2D T2D 07
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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000HRS
120Hz/20
120Hz
100VDC
t2d 82
T2D 79
marking T2D
T2D 07
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PDF
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t2d 82
Abstract: No abstract text available
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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Original
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000HRS
120Hz/20Â
120Hz
100VDC
t2d 82
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PDF
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t2d 82
Abstract: t2d marking code
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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Original
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000HRS
120Hz/20Â
120Hz
100VDC
t2d 82
t2d marking code
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T2D 4N DIODE
Abstract: resistor HMR 5W diode code GW 17
Text: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories
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BAS 98 ATEX 2380 X
Abstract: KEMA 01 ATEX 2130 u T2D 4N DIODE 0/BAS 98 ATEX 2380 X kema junction box
Text: Weidmüller – Partner in Industrial Connectivity. 1 Modular Terminal Blocks Catalogue 2012/2013 Catalogue 2012/2013 Modular Terminal Blocks As experienced experts we support our customers and partners around the world with products, solutions and services in the industrial environment of power,
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Original
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1282250000/03/2012/SMDM
BAS 98 ATEX 2380 X
KEMA 01 ATEX 2130 u
T2D 4N DIODE
0/BAS 98 ATEX 2380 X
kema junction box
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IS1715
Abstract: qml-38535 5962R0052101TXC smd TRANSISTOR marking T1 IS1715ARH
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro 00-08-21 R. MONNIN B Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro
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IS9-1715ARH-8
IS9-1715ARH-T
IS9-1715ARH-Q
IS0-1715ARH-Q
IS1715
qml-38535
5962R0052101TXC
smd TRANSISTOR marking T1
IS1715ARH
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PDF
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IS1715ARH
Abstract: IS-1715ARH QML-38535 transistor smd marking KA IS1715 TDA 4422 CDFP4-F16 IS9-1715ARH-T smd mark 601 8 pin
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro 00-08-21 R. MONNIN B Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro
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Original
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5962F0052101V9A
IS0-1715ARH-Q
IS1715ARH
IS-1715ARH
QML-38535
transistor smd marking KA
IS1715
TDA 4422
CDFP4-F16
IS9-1715ARH-T
smd mark 601 8 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to tT1, TDP, VPAUX, tT2, TDA tests and switch footnotes 2 and 3 as specified under table I. - ro Make changes to SEP as specified under 1.5 and ICCS, tT1, tT2 tests as specified in table I. – ro
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PDF
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256k x 8 dram
Abstract: SIMM 30-pin
Text: MT2D2568 256K X 8 DRAM M ODULE [MICRON DRAM . . 256K x 8 DRAM _ FAST PAGE MODE MT2D2568 LOW POWER, EXTENDED REFRESH (MT2D2568 L) M O DULE IV IV L fU I-L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access
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OCR Scan
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MT2D2568
30-pin
350mW
512-cycle
MT2D2568)
30-PinS
256k x 8 dram
SIMM 30-pin
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PDF
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T2D DIODE
Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Text: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD
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OCR Scan
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Q62702-A732
EHA070GI
DO-35
fl235bOS
f-100
fi53SbDS
00bb5b5
T2D DIODE
T2D 70 diode
T2D 40 DIODE
T2D 65 DIODE
diode T2D
T2d 03 diode
T2D 09 diode
T2D 75 diode
diode t2d 05
T2D DIODE 06
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PDF
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T2D19
Abstract: No abstract text available
Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM
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OCR Scan
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MT2D18
30-pin
MT2D18M-6
DG113SQ
T2D19
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON • M T12D 136 MEG X 36, 2 MEG x 18 DRAM MODULE SeWCOWXCTOR MC DRAM „ . . _ I V I W a . . Ä _ 1 MEG x 36>2 MEG x 18 FAST PAGE MODE (MT12D136 LOW POWER, PEXTENDED Y T P M n P n RF REFRESH (MT12D136 L) MODULE W b k FEATURES OPTIONS MARKING • Timing
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OCR Scan
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MT12D136)
MT12D136
72-Pin
DE-12)
DE-18)
MT12D136M/G
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM
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OCR Scan
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MT2D48
30-pin
T2D48M-6
110ns
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line
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OCR Scan
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T2D18
MT2D18)
MT2D18
30-pin,
450mW
024-cycle
CYCLE28
MT2D16
MT2D18
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PDF
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T2D 53
Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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OCR Scan
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T4D232
T8D432
72-pin,
024-cycle
048-cycle
72-PiRON
000xB
T2D 53
T2D 70
T2D 35
"T2D"
T2D 30
T2D 66
T2D 17
T2D 32
marking T2D
T2D 31
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PDF
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marking T2D
Abstract: STA93
Text: Philips Semiconductors Product specification PNP high-voltage transistors PMSTA92; PMSTA93 FEATURES PINNING • High voltage. PIN DESCRIPTION 1 base APPLICATIONS 2 em itter • High voltage sw itching in telephony. 3 collector DESCRIPTION a PNP transistor in a SO T323 plastic package.
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OCR Scan
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PMSTA92;
PMSTA93
STA42
PMSTA43.
PMSTA92
OT323)
STA92
STA93
marking T2D
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PDF
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EF6810
Abstract: J 6810 D EF68A10 EF68A10CV EF6810CM j 6810 EF68A10C EF68B10 EF6810CV EF6810CMG
Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6810 NMOS 1 2 8x 8 BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The EF 6810 is a byte-organized memory designed for use in bus organized systems. It is fabricated w ith N-channel s ili con gate technology. For ease of use, the. device operates
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OCR Scan
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EF6810
J 6810 D
EF68A10
EF68A10CV
EF6810CM
j 6810
EF68A10C
EF68B10
EF6810CV
EF6810CMG
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,
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OCR Scan
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SST5912
SST5912
300ns,
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PDF
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