Untitled
Abstract: No abstract text available
Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • • • Fast Speed Switching Wide Safe Operating Area Suitable for ElectronicBallast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
|
Original
|
FJD5553
J5553
FJD5553
|
PDF
|
J5555
Abstract: No abstract text available
Text: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5555 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
|
Original
|
FJD5555
J5555
J5555
|
PDF
|
electronic ballast with npn transistor
Abstract: No abstract text available
Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
|
Original
|
FJD5553
J5553
electronic ballast with npn transistor
|
PDF
|
j555
Abstract: marking A1 TRANSISTOR FJD5553 FJD5553TM J5553 electronic ballast with npn transistor
Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
|
Original
|
FJD5553
J5553
FJD5553
j555
marking A1 TRANSISTOR
FJD5553TM
J5553
electronic ballast with npn transistor
|
PDF
|
J5555
Abstract: J555 FJD5555 FJD5555TM
Text: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
|
Original
|
FJD5555
J5555
FJD5555
J5555
J555
FJD5555TM
|
PDF
|
marking code vishay SILICONIX
Abstract: 45N05-20L SQD45N05-20L vishay siliconix code marking siliconix marking code TO252-DPAK SUD45N05-20L VISHAY MARKING CODE 45n05 Marking information
Text: Part Marking Information Vishay Siliconix DEVICES: REVERSE TO-252 DPAK Reverse TO-252 (Q)45N0520L TYWFLL Example Part Numbers In Red Type Q = Automotive, for example for SQD45N05-20L. No character otherwise, for example for SUD45N05-20L = ESD Symbol = Lot Code
|
Original
|
O-252
45N0520L
SQD45N05-20L.
SUD45N05-20L
16-Jul-09
marking code vishay SILICONIX
45N05-20L
SQD45N05-20L
vishay siliconix code marking
siliconix marking code
TO252-DPAK
SUD45N05-20L
VISHAY MARKING CODE
45n05
Marking information
|
PDF
|
triac ST T4 1060
Abstract: ST T4 1060 ST T4 0560 T4 3570 T4 0560 triac T4 0560 ST T4 0570 ST T4 3570 ST T4 3560 T4 3560 B
Text: T4 series 4 A Triacs Datasheet − production data . A2 G A1 TO-220AB T4-T Table 1. Main characteristics Symbol Value Unit IT(rms) 4 A VDRM, VRRM 600 to 800 V IGT 5 to 35 mA ISOWATT220AB (T4-W) Table 2. Device summary Symbol Marking T405-xxxB T405-xxxB-TR
|
Original
|
O-220AB
ISOWATT220AB
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T405-xxxW
T410-xxxB
T410-xxxB-TR
T410-xxxH
triac ST T4 1060
ST T4 1060
ST T4 0560
T4 3570
T4 0560 triac
T4 0560
ST T4 0570
ST T4 3570
ST T4 3560
T4 3560 B
|
PDF
|
marking code vishay SILICONIX
Abstract: 45N05-20 dpak code Siliconix 45n0520l TO252-DPAK 45n05 marking t Marking transistor TO252
Text: Part Marking Information Vishay Siliconix DEVICES: REVERSE TO-252 DPAK Reverse TO-252 45N0520L TYWFLL Example Part Numbers In Red Type = ESD Symbol = Lot Code = Siliconix Logo T = Assembly Factory Code Y = Year Code W = Week Code F = Wafer Fab Code f = Mold Dimple
|
Original
|
O-252
45N0520L
22-Apr-04
marking code vishay SILICONIX
45N05-20
dpak code
Siliconix
45n0520l
TO252-DPAK
45n05
marking t
Marking transistor
TO252
|
PDF
|
DIODE Ifavm 30 A
Abstract: 8P030AS 8P030
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings
|
Original
|
8-03AS
O-252AA
8P030AS
DIODE Ifavm 30 A
8P030AS
8P030
|
PDF
|
ixys dsep
Abstract: DSEP6-06AS P6QGUI
Text: DSEP 6-06BS Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06BS C A TO-252AA DPAK Cathode P6QGUI Cathode (Flange) Anode Symbol Conditions
|
Original
|
6-06BS
O-252AA
6-06AS
ixys dsep
DSEP6-06AS
P6QGUI
|
PDF
|
06N10-225L
Abstract: 06N10 marking code vishay SILICONIX 06N10225L TO252-DPAK 45n0520l vishay siliconix code marking siliconix marking code 45n05 45N05-20L
Text: Part Marking Information Vishay Siliconix DEVICES: TO-252 DPAK TO-251 20L TO-252 TO-251 45N05- 06N10225L f LL TYWF f LL TYWF Example Part Numbers In Red Type = ESD Symbol = Lot Code = Siliconix Logo T = Assembly Factory Code Y = Year Code W = Week Code F
|
Original
|
O-252
O-251
45N0520L
06N10225L
21-Apr-04
06N10-225L
06N10
marking code vishay SILICONIX
06N10225L
TO252-DPAK
45n0520l
vishay siliconix code marking
siliconix marking code
45n05
45N05-20L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GOWANDA Inductance Tolerance Date Code Year/Week Lot Symbol Ø.152 / .172 [3.86 / 4.37] Ø.023 / .027 [.58 / .69] .390 / .430 [9.91 / 10.92] Tape and Reel Specs: Pcs./12in reel maximum: Pitch between parts: Inside tape spacing: Class: Notes: - Marking: Laser mark
|
Original
|
/12in
MLRF17S-Dimensional
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
|
Original
|
8-03AS
8P030AS
O-252AA
|
PDF
|
to252aadpak
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
|
Original
|
8-03AS
O-252AA
8P030AS
to252aadpak
|
PDF
|
|
|
6P060AS
Abstract: 6p060
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
|
Original
|
6-06AS
O-252AA
6P060AS
6P060AS
6p060
|
PDF
|
6P060AS
Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Anode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
|
Original
|
6-06AS
O-252AA
6P060AS
6P060AS
|
PDF
|
6P060AS
Abstract: 6-06AS
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
|
Original
|
6-06AS
O-252AA
6P060AS
6P060AS
6-06AS
|
PDF
|
Advantages of IEC
Abstract: No abstract text available
Text: DSS 2-100AB Advanced Technical Information IFAV = 2 A VRRM = 100 V VF = 0.59 V Power Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A SMB DO-214 AA on product DSS 2-100AB A X2KAB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
2-100AB
DO-214
Advantages of IEC
|
PDF
|
x1ka Marking
Abstract: DO-214 Marking x1ka cr marking DO-214 diode DO-214 AC
Text: DSS 1-100AA Advanced Technical Information IFAV = 1 A VRRM = 100 V VF = 0.6 V Power Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A SMA DO-214 AC on product A DSS 1-100AA X1KA C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
1-100AA
DO-214
x1ka Marking
DO-214 Marking
x1ka cr marking
DO-214 diode
DO-214 AC
|
PDF
|
DO-214 diode
Abstract: DO-214 Marking
Text: DSS 1-60BA Advanced Technical Information IFAV = 1 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMA DO-214 AC on product A DSS 1-60BA X1GB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
1-60BA
DO-214
DO-214 diode
DO-214 Marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS 1-40BA Advanced Technical Information IFAV = 1 A VRRM = 40 V VF = 0.34 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMA DO-214 AC on product A DSS 1-40BA X1EB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
1-40BA
DO-214
|
PDF
|
marking aa diode
Abstract: No abstract text available
Text: DSS 2-60BB Advanced Technical Information IFAV = 2 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMB DO-214 AA on product DSS 2-60BB A X2GBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
2-60BB
DO-214
marking aa diode
|
PDF
|
DO-214 Marking
Abstract: diode DO214 marking aa diode DO-214 diode
Text: DSS 2-40BB Advanced Technical Information IFAV = 2 A VRRM = 40 V VF = 0.33 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMB DO-214 AA on product DSS 2-40BB A X2EBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
|
Original
|
2-40BB
DO-214
DO-214 Marking
diode DO214
marking aa diode
DO-214 diode
|
PDF
|
BSP 300
Abstract: No abstract text available
Text: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 V'bs 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A ^DS on Package 20 Q SOT-223 Marking Tape and Reel Information Maximum Ratings Parameter Symbol Drain source voltage
|
OCR Scan
|
OT-223
Q67050
-T0009
OT-223
BSP 300
|
PDF
|
