Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1005□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20131004-E PAGE 1 A 101 Ⅰ﹒Configuration and dimensions： Marking Inductance Code C B F D H D G E I I PCB Pattern Unit：m/m
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SS1005â
20131004-E
30sec
60satureï
MIL-STD-202
JESD22-B111
JIS-C-6429
AR-001C
J-STD-002
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1003□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20140214-C PAGE 1 A Ⅰ﹒Configuration and dimensions： Marking Inductance code C B F D E H D G I I PCB Pattern Unit：m/m A
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SS1003â
20140214-C
30sec
MIL-STD-202
JESD22-B111
JIS-C-6429
AR-001C
J-STD-002
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL REF. : SS1004□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. 20131004-B PAGE 1 A B Marking 100 Ⅰ﹒Configuration and dimensions： D F E C PCB Pattern Unit：m/m A 9.90±0.3 B C D E F 4.50±0.3
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SS1004â
20131004-B
30sec
60sec
150sec
MIL-STD-202
JESD22-B111
JIS-C-6429
AR-001C
J-STD-002
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20120323-C PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F D H D m/m m/m
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20120323-C
SS1005â
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cm 8600 c smd
Abstract: SS1005 SS1005330YL
Text: SPECIFICATION FOR APPROVAL REF : 20091110-B PROD. NAME PAGE: 1 ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F m/m m/m m/m m/m
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20091110-B
SS1005L-
cm 8600 c smd
SS1005
SS1005330YL
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090626-A PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1003□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance code C B F m/m m/m m/m m/m
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0090626-A
SS1003â
E4008
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ss1003
Abstract: jung shing wire E4008 SS1003220M mtl d 94v-0 m 94v-0
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090626-A PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1003□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance code C B F D E H D m/m m/m
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0090626-A
SS1003L-
E4008
ss1003
jung shing wire
E4008
SS1003220M
mtl d 94v-0
m 94v-0
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SS1004
Abstract: SMD MARKING CODE 102 SMD MARKING 104
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1004□□□□L□-□□□ ABC'S ITEM NO. A A : 9.9±0.3 m/m B : 4.5±0.3 m/m C : 2.9 typ. m/m D : 10.0 ref. m/m E : 10.0 ref. m/m F : 2.8 ref. m/m B Marking
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SS1004L-
Temp260
50sec
70sec
MW75C
MW28-C
AR-001A
OBMW2/E174837
SS1004
SMD MARKING CODE 102
SMD MARKING 104
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1004□□□□L□-□□□ ABC'S ITEM NO. A A : 9.9±0.3 m/m B : 4.5±0.3 m/m C : 2.9 typ. m/m D : 10.0 ref. m/m E : 10.0 ref. m/m F : 2.8 ref. m/m B Marking
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SS1004â
30sec
MW75C
MW28-C
AR-001A
E174837
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ss129
Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3
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Q62702-S568
E6327:
Q67000-S243
E6433:
OT-23
ss129
SS100 TRANSISTOR DATASHEET
ss110 TRANSISTOR
ss100 transistor
SS125
q62702-s566
ss110 to-92
ss89 to-92
SS100 TO92
TRANSISTOR ss101
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marking DF
Abstract: ECSP1608-4 N3004 SS1003EJ
Text: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
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SS1003EJ
ENN8157
500mA,
marking DF
ECSP1608-4
N3004
SS1003EJ
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SS100
Abstract: IR SS100 SS15-SS16 SS12 MICROSEMI SS13 SS14 SS15 SS16 SS18
Text: SS12 thru SS100 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • • • 1 Amp Schottky Rectifier 20 - 100 Volts Schottky Barrier Rectifier Guard Ring Protection Low Forward Voltage Reverse Energy Tested
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SS100
DO-214AC
SS100
IR SS100
SS15-SS16
SS12 MICROSEMI
SS13
SS14
SS15
SS16
SS18
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ss20 SOD-123F marking
Abstract: SS20 SS80 RECTRON MARKING CODE FOR 2010
Text: SS20L THRU SS100L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity
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SS20L
SS100L
OD-123FL
ss20 SOD-123F marking
SS20
SS80
RECTRON MARKING CODE FOR 2010
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Untitled
Abstract: No abstract text available
Text: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).
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SS10015M
ENN7979
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SS1003M3
Abstract: No abstract text available
Text: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).
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SS1003M3
EN8372A
SS1003M3
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SS1003M3
Abstract: No abstract text available
Text: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).
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SS1003M3
ENN8372
SS1003M3
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"Marking SC"
Abstract: SS1003M
Text: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
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SS1003M
ENN8347
500mA,
"Marking SC"
SS1003M
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Untitled
Abstract: No abstract text available
Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)
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EN8690
CPH5848
MCH3306)
SS10015M)
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86886
Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)
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CPH5846
EN8688
MCH3309)
SS10015M)
86886
diode sy 710
mch5846
CPH5846
MCH3309
SS10015M
ss-1001
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MCH3339
Abstract: MCH5823 SS10015M
Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)
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MCH5823
ENN7757
MCH3339)
SS10015M)
MCH3339
MCH5823
SS10015M
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ss1001
Abstract: MCH3445 MCH5812 SS10015M
Text: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)
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MCH5812
ENN7998
MCH3445)
SS10015M)
ss1001
MCH3445
MCH5812
SS10015M
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D1004
Abstract: MCH3405 MCH5811 SS10015M
Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)
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MCH5811
ENN8059
MCH3405)
SS10015M)
D1004
MCH3405
MCH5811
SS10015M
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MCH3307
Abstract: MCH5836 SS10015M
Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)
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MCH5836
ENA0780
MCH3307)
SS10015M)
A0780-6/6
MCH3307
MCH5836
SS10015M
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SS1001
Abstract: MCH5837 mosfet yb SS10015M TA72
Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M
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MCH5837
ENA0781
SS10015M)
A0781-6/6
SS1001
MCH5837
mosfet yb
SS10015M
TA72
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