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    MARKING S2A SOT23 Search Results

    MARKING S2A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING S2A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon PDF

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 PDF

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904 PDF

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904 PDF

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


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    100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E PDF

    s2A SOT23

    Abstract: marking s2A sot23 SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 s2A SOT23 marking s2A sot23 SMBT3906U PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U PDF

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ TRANSISTOR S2A SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3906 PDF

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking s2a SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3906 s2A SOT23 infineon marking code B2 SOT23 PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U PDF

    CH3906GP

    Abstract: SOT-23 marking S2A
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CH3906GP OT-23 OT-23) 200mA) CH3906GP SOT-23 marking S2A PDF

    H12E

    Abstract: h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e
    Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


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    Q68000-A4417 OT-23 H12E h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e PDF

    PNP marking NY sot-223

    Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain


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    CHTA64X CHT3906X CHT2907X CHT4033X CHT5401X CHTA92X CHTA64Z CHT3906Z CHT2907Z CHT2955Z PNP marking NY sot-223 TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906 PDF

    sot23 transistor marking 12E

    Abstract: TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CH3906PT OT-23 OT-23) 200mA) 1N916 sot23 transistor marking 12E TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives


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    MMBT3906 -200mA 2002/95/EC OT-23, MIL-STD-750, PDF

    1N916

    Abstract: MMBT3906
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives


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    MMBT3906 -200mA 2002/95/EC OT-23, MIL-STD-750, 1N916 MMBT3906 PDF

    s2A SOT23

    Abstract: SOT-23 marking S2A
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts POWER 40 Volts SOT-23 Unit:inch mm • PNP epitaxial silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = -40V 0.103(2.60) • Collector current IC = -200mA


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    MMBT3906 -200mA OT-23 OT-23, MIL-STD-750, RB500V-40 s2A SOT23 SOT-23 marking S2A PDF

    TRANSISTOR S2A

    Abstract: 1N916 MMBT3906W transistor SOT23 YC 30 TRANSISTOR MARKING YC
    Text: MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features SOT-23 DO-41 .103 2.60 .056(1.40) .047(1.20) .119(3.00) .110(2.80) Mechanical Data 3 COLLECTOR .006(.15)MAX .020(.50) .013(.35) 1 BASE 1 Base 2 Emitter .006(.15)


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    MMBT3906W OT-23 DO-41 OT-323, MIL-STD-202, TRANSISTOR S2A 1N916 MMBT3906W transistor SOT23 YC 30 TRANSISTOR MARKING YC PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)


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    MMBT3906 -200mA MIL-STD-202, OT-23, PDF

    s2A PART MARKING SOT-23

    Abstract: transistor SOT23 YC 30 MARKING S2A SOT-23 1N916 MMBT3906 YC sot 23 s2A SOT23
    Text: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)


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    MMBT3906 -200mA MIL-STD-202, OT-23, s2A PART MARKING SOT-23 transistor SOT23 YC 30 MARKING S2A SOT-23 1N916 MMBT3906 YC sot 23 s2A SOT23 PDF

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan
    Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan
    Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b PDF