BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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MMBTA06 S1G
Abstract: MMBTA56
Text: SMBTA06/MMBTA06 NPN Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBTA 56 / MMBTA56 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA06/MMBTA06 s1G Pin Configuration
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SMBTA06/MMBTA06
MMBTA56
MMBTA06 S1G
MMBTA56
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Untitled
Abstract: No abstract text available
Text: SMBTA06/MMBTA06 NPN Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBTA 56 / MMBTA56 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBTA06/MMBTA06 Marking s1G Pin Configuration
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SMBTA06/MMBTA06
MMBTA56
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MMBTA06 S1G
Abstract: No abstract text available
Text: SMBTA06/ MMBTA06 NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBTA 56 / MMBTA56 PNP Type SMBTA06/ MMBTA06 Marking s1G Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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SMBTA06/
MMBTA06
MMBTA56
MMBTA06 S1G
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MMBTA06 S1G
Abstract: MMBTA06 MMBTA56 SMBTA06 SMBTA56 MARKING S1G
Text: SMBTA06/ MMBTA06 NPN Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 PNP MMBTA56 (PNP) 2 1 Type SMBTA06/ MMBTA06 Marking s1G 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings
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SMBTA06/
MMBTA06
SMBTA56
MMBTA56
VPS05161
EHP00818
EHP00819
EHP00820
MMBTA06 S1G
MMBTA06
MMBTA56
SMBTA06
SMBTA56
MARKING S1G
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Untitled
Abstract: No abstract text available
Text: SMBTA06/ MMBTA06 NPN Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 PNP MMBTA56 (PNP) 2 1 Type SMBTA06/ MMBTA06 Marking s1G 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings
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SMBTA06/
MMBTA06
SMBTA56
MMBTA56
VPS05161
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Untitled
Abstract: No abstract text available
Text: SMBTA06 NPN Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 PNP 2 1 Type Marking SMBTA06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA06
SMBTA56
VPS05161
EHP00818
EHP00819
EHP00820
EHP00821
Nov-30-2001
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SMBTA06
Abstract: SMBTA56
Text: SMBTA06 NPN Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 PNP 2 1 Type Marking SMBTA06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA06
SMBTA56
VPS05161
EHP00818
EHP00819
EHP00820
EHP00821
Jul-10-2001
SMBTA06
SMBTA56
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MARKING S1G
Abstract: No abstract text available
Text: SMBTA 06 NPN Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP 2 1 Type Marking SMBTA 06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter
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VPS05161
OT-23
EHP00818
EHP00819
EHP00820
EHP00821
Oct-14-1999
MARKING S1G
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Untitled
Abstract: No abstract text available
Text: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA06M
SMBTA56M
VPW05980
SCT595
Jul-10-2001
EHP00821
EHP00819
EHP00820
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MARKING S1G
Abstract: SCT595 SMBTA06M SMBTA56M
Text: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA06M
SMBTA56M
VPW05980
SCT595
EHP00821
EHP00819
EHP00820
EHP00815
Nov-30-2001
MARKING S1G
SCT595
SMBTA06M
SMBTA56M
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SCT-595
Abstract: VPW05980
Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
SCT-595
EHP00821
EHP00819
EHP00820
EHP00815
Oct-14-1999
SCT-595
VPW05980
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Q62702-A3473
Abstract: SCT-595
Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
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VPW05980
Q62702-A3473
SCT-595
EHP00821
EHP00819
EHP00820
EHP00815
Jun-08-1998
Q62702-A3473
SCT-595
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06 NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP Type Marking Ordering Code Pin Configuration SMBTA 06 s1G Q68000-A3428 1=B 2=E Package 3=C SOT-23 Maximum Ratings
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Q68000-A3428
OT-23
Jan-22-1999
P00821
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package
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Q62702-A3473
SCT-595
300ns;
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP II LD CO Q62702-A3473 II s1G o SMBTA 06M Pin Configuration CM Ordering Code II Marking 0Û Type Package
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Q62702-A3473
SCT-595
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 14-. S Silicon Schottky Diodes • Beam lead technology • Low dimension • High performance • Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Pin Configuration Ordering Code BAT 14-020 S
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Q62702-D1267
Q62702-D1275
Q62702-D1258
Q62702-D1284
EHA07
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bta 05
Abstract: BTA05
Text: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05
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Q68000-A3430
Q68000-A3428
OT-23
EHP00816
bta 05
BTA05
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