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    MARKING QD Search Results

    MARKING QD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING QD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT6SM32M16AG-S1

    Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
    Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed


    Original     		PDF 512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 NT6SM32M16AG-S1 NT6SM16M32 128M32 Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb

    Lpddr2 Idd7

    Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed


    Original     		PDF 512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 Lpddr2 Idd7 COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32

    NCP1937

    Abstract: No abstract text available
    Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW


    Original     		PDF NCP1937 751BS NCP1937xxG NCP1937/D NCP1937

    Lpddr2 Idd7

    Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 512Mb NT6SM16M32AK -16Meg -90-ball x13mm) 16M32 Lpddr2 Idd7 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1

    Lpddr2 Idd7

    Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 256Mb NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 Lpddr2 Idd7 Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2

    NTC 200-9

    Abstract: a2240 128M16 A1930 NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 512Mb NT6SM16M32AK -16Meg 16M32 NTC 200-9 a2240 128M16 A1930 NT6SM16M32

    NCP1937

    Abstract: No abstract text available
    Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX


    Original     		PDF NCP1937 NCP1937/D

    lpddr2 256mb

    Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


    Original     		PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2

    JEDEC51-1

    Abstract: NCP1937 NCP1937C1DR2G
    Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX


    Original     		PDF NCP1937 NCP1937/D JEDEC51-1 NCP1937C1DR2G

    A1930

    Abstract: No abstract text available
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 256Mb NT6SM8M32AK -16Meg 16M16 A1930

    NCP1937

    Abstract: NTC thermistor circuit diagram TTC03 PFC inductor TTC-03
    Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX


    Original     		PDF NCP1937 NCP1937/D NTC thermistor circuit diagram TTC03 PFC inductor TTC-03

    NT6DM16M16AD-T1

    Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


    Original     		PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 NT6DM16M16AD-T1 64M32 HP 3458 NT6DM16M16AD-T1I

    Untitled

    Abstract: No abstract text available
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		PDF Si1901DL OT-363 SC-70 08-Apr-05

    Si1901DL

    Abstract: D234
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		PDF Si1901DL OT-363 SC-70 S-01886--Rev. 28-Aug-00 D234

    HCT595AG

    Abstract: MC74HCT595ADG MC74HCT595A
    Text: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit


    Original     		PDF MC74HCT595A HCT595A SOIC-16 TSSOP-16 MC74HCT595A/D HCT595AG MC74HCT595ADG

    Untitled

    Abstract: No abstract text available
    Text: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit


    Original     		PDF MC74HCT595A MC74HCT595A HCT595A MC74HCT595A/D

    DD05215

    Abstract: ADD1210
    Text: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking


    OCR Scan     		PDF HAL115 6251-414-2PD 4tfl2711 DD05215 ADD1210

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


    OCR Scan     		PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code


    OCR Scan     		PDF flS3b32Q BF994S Q62702-F963 Q62702-F1020 T-31-25 23b320

    Magnetic Field Sensor FLC 100

    Abstract: transistor ITT
    Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection


    OCR Scan     		PDF HAL628, HAL638 628UA, HAL628S HAL638UA, HAL638S 170ch Magnetic Field Sensor FLC 100 transistor ITT

    HAL628

    Abstract: 004-G intermetall 638UA
    Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection


    OCR Scan     		PDF HAL628, HAL638 628UA, HAL628S 638UA, HAL638S 4083ion HAL628 004-G intermetall 638UA

    Untitled

    Abstract: No abstract text available
    Text: MODEL ST-30 Chip Potentiometers Surface Mount, .118" [3.0m m ] Square Single Turn, Open Fram e FEATURES • Designed for efficient, accurate miniaturization • Can be wave or dip soldered without rotor problems • Coded marking for easy identification of resistance value


    OCR Scan     		PDF ST-30 250PPM/Â

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION HAL 800 Programmable Linear Hall Effect Sensor r MICRO NAS Edition Aug. 24, 1998 6251-441-1 Al INTERMETALL HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code


    OCR Scan     		PDF

    diode code ae 89A

    Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
    Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.


    OCR Scan     		PDF 6251-345-4PD HAL300 diode code ae 89A diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification