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    64M32 Search Results

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    64M32 Price and Stock

    Vishay Dale CRCW12064M32FKEA

    RES SMD 4.32M OHM 1% 1/4W 1206
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    DigiKey CRCW12064M32FKEA Reel 10,000 5,000
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    CRCW12064M32FKEA Cut Tape 1,009 1
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    Micron Technology Inc MT46H64M32LFBQ-48 IT:C

    IC DRAM 2GBIT PAR 208MHZ 90VFBGA
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    DigiKey MT46H64M32LFBQ-48 IT:C Bulk 2,820 1
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    Mouser Electronics MT46H64M32LFBQ-48 IT:C 1,637
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    Avnet Asia MT46H64M32LFBQ-48 IT:C 10 Weeks 1,000
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    New Advantage Corporation MT46H64M32LFBQ-48 IT:C 481 1
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    Alliance Memory Inc AS4C64M32MD2A-25BIN

    IC DRAM 2GBIT PARALLEL 134FBGA
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    DigiKey AS4C64M32MD2A-25BIN Tray 1,854 1
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    TME AS4C64M32MD2A-25BIN 1
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    Karl Kruse GmbH & Co KG AS4C64M32MD2A-25BIN 41,354
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    Rutronik AS4C64M32MD2A-25BIN Tray 2,052 171
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    New Advantage Corporation AS4C64M32MD2A-25BIN 484 1
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    Micron Technology Inc MT46H64M32LFBQ-48 WT:C TR

    IC DRAM 2GBIT PAR 208MHZ 90VFBGA
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    DigiKey MT46H64M32LFBQ-48 WT:C TR Cut Tape 1,031 1
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    MT46H64M32LFBQ-48 WT:C TR Reel 1,000 1,000
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    Micron Technology Inc MT46H64M32LFBQ-48 IT:C TR

    IC DRAM 2GBIT PAR 208MHZ 90VFBGA
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    DigiKey MT46H64M32LFBQ-48 IT:C TR Cut Tape 990 1
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    Avnet Americas MT46H64M32LFBQ-48 IT:C TR Reel 1,000 18 Weeks 1,000
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    Mouser Electronics MT46H64M32LFBQ-48 IT:C TR 2,214
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    64M32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


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    PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    Untitled

    Abstract: No abstract text available
    Text: 64M32V-XSBX Not Recommended for New Designs — Replaced by 64M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when


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    PDF W764M32V-XSBX W764M32V1-XBX 64Mx32 W764M32V1-XBX"

    W764M32V1-XBX

    Abstract: No abstract text available
    Text: 64M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The 64M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


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    PDF W764M32V1-XBX 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte prx32

    Untitled

    Abstract: No abstract text available
    Text: 64M32L2SB-XX *PRELIMINARY 2Gb LPDDR 2 x 32Mx32 FEATURES  Package: GENERAL DESCRIPTION • 152 Plastic Ball Grid Array (PBGA), 14 x 14 mm Microsemi 64M32L2SB package-on-package (PoP) MCP product combines two Mobile LPDRAM devices in a single MCP.


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    PDF MS46H64M32L2SB-XX 32Mx32) MS46H64M32L2SB 268M-bit

    D9KG

    Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
    Text: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


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    PDF 152-Ball MT46HxxxMxxLxCG 09005aef833913f1/Source: 09005aef833913d6 D9KG marking code micron label marking aa5 M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21

    MT46H128M16

    Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks 64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


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    PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball

    216-ball

    Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, 64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb 216-ball Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32

    Lpddr2 Idd7

    Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


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    PDF 512Mb NT6SM16M32AK -16Meg -90-ball x13mm) 16M32 Lpddr2 Idd7 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 64M32V-XSBX 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory FEATURES Single power supply operation Software features • 3 volt read, erase, and program operations • Program Suspend and Resume: read other sectors before programming operation is


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    PDF 64Mx32 128-word/256-byte 8-word/16-byte 64-bit

    mt42l128M32

    Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, 64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb mt42l128M32 mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L256M32D MT42L128M32D2

    MT42L64M64D2

    Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, 64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb MT42L64M64D2 mt42l128M32 LPDDR2-1066 64M32 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2

    CSN-11

    Abstract: MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label
    Text: Preliminary‡ 168-Ball x32 Mobile LPDDR PoP TI OMAP Addendum Features Mobile LPDDR Addendum 168-Ball Package-on-Package (PoP) WFBGA TI OMAP MT46HxxxMxxL2KQ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


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    PDF 168-Ball MT46HxxxMxxL2KQ 09005aef83a3b4e1/Source: 09005aef83a3b4cb CSN-11 MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label

    Untitled

    Abstract: No abstract text available
    Text: 64M32V1-XSBX 64M32V1-XSBX *ADVANCED 512MB 2 x 64M x 32 / 1GB (4 x 64M x 32) NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The 64M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The


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    PDF W7264M32V1-XSBX W7464M32V1-XSBX 512MB W7264M32V1-XSBX W7464M32V1-XSBX 32-bit 16-bit 1024-byte

    Untitled

    Abstract: No abstract text available
    Text: 64M32V1-XBX 256MB 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The 64M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


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    PDF W764M32V1-XBX 256MB 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte fo2013

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 64M32V-XSBX 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory FEATURES  Software features  Single power supply operation • Program Suspend and Resume: read other sectors before programming operation is completed


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    PDF 64Mx32 128-word/256-byte 8-word/16-byte 64-bit

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 64M32V-XSBX PRELIMINARY* 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory FEATURES Single power supply operation Software features • 3 volt read, erase, and program operations • Program Suspend and Resume: read other


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    PDF 64Mx32 128-word/256-byte 8-word/16-byte 64-bit

    lpddr2 256mb

    Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


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    PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks 64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


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    PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 60-ball 90-ball 09005aef84e25f2e

    lpddr2 DQ calibration

    Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, 64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb lpddr2 DQ calibration micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory

    F012

    Abstract: MT46H128M16 Dual LPDDR2 ELPIDA mobile dram LPDDR2 MT46H128 MT46H64M32LF MT46H128M
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks 64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


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    PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb F012 MT46H128M16 Dual LPDDR2 ELPIDA mobile dram LPDDR2 MT46H128 MT46H64M32LF MT46H128M

    MT46H128M32L2

    Abstract: ELPIDA DDR User
    Text: Preliminary‡ 2Gb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks 64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4


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    PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef84e25f2e MT46H128M32L2 ELPIDA DDR User

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 64M32V-XSBX ADVANCED* 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory FEATURES Single power supply operation Software features • 3 volt read, erase, and program operations • Program Suspend and Resume: read other


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    PDF W764M32V-XSBX 64Mx32 128-word/256-byte

    MT46H64M32

    Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ
    Text: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


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    PDF 152-Ball MT46HxxxMxxLxCG MT46HxxxMxxLxKZ 09005aef833913f1/Source: 09005aef833913d6 MT46H64M32 MT46H128 MT46H64M32L2CG-6 MT46H128M lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ

    smd marking K23

    Abstract: lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23
    Text: Preliminary‡ 168-Ball x16, x32 Mobile LPDDR PoP TI OMAP Mobile DDR SDRAM Addendum Mobile LPDDR 168-Ball Package-on-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


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    PDF 168-Ball MT46HxxxMxxLxJG 09005aef833508fb/Source: 09005aef83350d72 smd marking K23 lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23