CMXD6001
Abstract: 3FR1
Text: CMXD6001 SUPERmini TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface
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CMXD6001
OT-26
100mA
11-September
CMXD6001
3FR1
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CMXD6001
Abstract: No abstract text available
Text: CMXD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy
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CMXD6001
CMXD6001
OT-26
100mA
12-February
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TK70002
Abstract: TK70002MCB
Text: TK70002 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Internal PNP Power Transistor Reverse Bias Voltage Protection Very Low Input-Output Voltage Difference Very Low Standby Current Overtemperature Protection
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TK70002
TK70002
IC-217-TK70002
0798O0
TK70002MCB
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marking pa sot-26
Abstract: TK70003 TK70003MCB marking 03s sot-23-6 Marking Information
Text: TK70003 SINGLE OUTPUT, TWO INPUT SOLID STATE SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Internal PNP Power Transistor Reverse Bias Voltage Protection Very Low Input-Output Voltage Difference Very Low Standby Current Overtemperature Protection
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TK70003
TK70003
IC-218-TK70003
0798O0
marking pa sot-26
TK70003MCB
marking 03s
sot-23-6 Marking Information
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Untitled
Abstract: No abstract text available
Text: TK70001 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Internal PNP Power Transistor Reverse Bias Voltage Protection Very Low Input-Output Voltage Difference Very Low Standby Current
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TK70001
TK70001
im2375
IC-216-TK70001
0798O0
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TSM3458
Abstract: sot26 pa N-Channel mosfet sot-26
Text: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●
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TSM3458
OT-26
TSM3458CX6
TSM3458
sot26 pa
N-Channel mosfet sot-26
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Untitled
Abstract: No abstract text available
Text: TSM3448 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 40 @ VGS = 4.5V 5 60 @ VGS = 2.5V 2.5 Block Diagram ● Advance Trench Process Technology ●
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TSM3448
OT-26
TSM3448CX6
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marking pa sot-26
Abstract: n-channel mosfet transistor ultra low igss pA TSM3446
Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●
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TSM3446
OT-26
TSM3446CX6
marking pa sot-26
n-channel mosfet transistor
ultra low igss pA
TSM3446
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MARKING D12
Abstract: N-Channel mosfet sot-26
Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●
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TSM3446
OT-26
TSM3446CX6
OT-26
MARKING D12
N-Channel mosfet sot-26
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TSM3443CX6 RF
Abstract: MARKING SO SOT26
Text: TSM3443 20V P-Channel MOSFET Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) 20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology
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TSM3443
OT-26
TSM3443CX6
OT-26
TSM3443CX6 RF
MARKING SO SOT26
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TK70403
Abstract: TK70403MTB TOKO voltage regulators
Text: TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Internal Shutdown Control (Off Current, 0.1 µA max) Low Dropout Voltage [30 mV (typ.) at 2 mA]
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TK70403
OT-26)
TK70403
lo375
IC-216-TK70001
0798O0
TK70403MTB
TOKO voltage regulators
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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Untitled
Abstract: No abstract text available
Text: isît o k o TK 70001 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • Internal PNP Power Transistor ■ Battery Powered System ■ Radio Control Systems ■ Reverse Bias Voltage Protection ■ Very Low Input-Output Voltage Difference ■ Very Low Standby Current
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TK700G1
IC-216-TK70001
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DESIGN RULE PCB
Abstract: No abstract text available
Text: raifOKO TK70002 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • Internal PNP Power Transistor ■ Battery Powered System ■ Reverse Bias Voltage Protection ■ Radio Control Systems ■ Very Low Input-Output Voltage Difference ■ Very Low Standby Current
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TK70002
TK70002
-217-T
DESIGN RULE PCB
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Untitled
Abstract: No abstract text available
Text: r& T O K O TK70001 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • Internal PNP Power Transistor ■ Battery Powered Systems ■ Reverse Bias Voltage Protection ■ Radio Control Systems ■ Very Low Input-Output Voltage Difference ■ Automatic Test Equipment ATE
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TK70001
TK70001
-216-TK70001
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Untitled
Abstract: No abstract text available
Text: r&TOKO TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Pagers ■ Internal PNP Transistor ■ Personal Communication Equipment ■ Built-In Shutdown Control (Off Current, 8 uA Typ)
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OT-26)
TK70403
TK70403
1997T
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features
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TSM3424
3424C
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Untitled
Abstract: No abstract text available
Text: r& T O K O TK70002 SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH FEATURES APPLICATIONS • Internal PNP Power Transistor ■ Battery Powered Systems ■ Reverse Bias Voltage Protection ■ Radio Control Systems ■ Very Low Input-Output Voltage Difference ■ Automatic Test Equipment ATE
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TK70002
1999Toko,
IC-217-TK70002
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em 223
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9
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TSM3441
3441C
em 223
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Untitled
Abstract: No abstract text available
Text: r& T O K O TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Pagers ■ Internal PNP Transistor ■ Personal Communication Equipment ■ Internal Shutdown Control (Off Current, 0.1 max)
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TK70403
OT-26)
-216-TK70001
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marking 2U diode
Abstract: TSM3455CX6 marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455
Text: E TAIW AN pb RoHS TSM3455 S E M IC O N D U C T O R 30V P-Channei MOSFET CO M PLIANCE PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23
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M3455
OT-26
TSM3455CX6
OT-26
marking 2U diode
marking 2U 20 diode
IR P-Channel mosfet
TSM345
diode marking code 2U
M3455
P-channel power mosfet 30V
tsm3455
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6
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TSM3433
OT-26
TSM3433CX6
OT-26
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TSM3433
Abstract: MARKING ato
Text: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V
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TSM3433
TSM3433CX6
OT-26
TSM3433
MARKING ato
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