Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING M6 TRANSISTOR Search Results

    MARKING M6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) Visit Rochester Electronics LLC Buy
    54F350/BEA Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/B2A Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) Visit Rochester Electronics LLC Buy

    MARKING M6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23 PDF

    m6 marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03


    Original     		WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 Vol45 -100A, -100mA, -10mA m6 marking transistor PDF

    BSS66

    Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
    Text: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these


    OCR Scan     		BSS66 BSS67 BSS69 BSS70. OT-23 BSS66& BSS67 FMMT2222 FMMT2369A cg 5763 BSS66R BSS67R FMMT2369 BFQ31 160i BC 5763 PDF

    smd transistor m6

    Abstract: transistor smd marking m6
    Text: Transistors SMD Type PNP Silicon Transistor 2SA733 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector-Base Voltage: VCBO=-60V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		2SA733 OT-23 -10mA 100HZ -100mA, smd transistor m6 transistor smd marking m6 PDF

    m7 smd diodes

    Abstract: smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611
    Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50


    Original     		2SA1611 -100mA -10mA m7 smd diodes smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611 PDF

    sot-23 Marking M6

    Abstract: "device marking" "device marking" M6 m6 marking transistor sot-23 AV9015LT1 S9015LT1
    Text: @vic SOT-23 Plastic-Encapsulate Transistors AV9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		OT-23 AV9015LT1 OT-23 -100mA, -10mA 30MHz S9015LT1 sot-23 Marking M6 "device marking" "device marking" M6 m6 marking transistor sot-23 AV9015LT1 PDF

    IC 4093 pin configuration

    Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
    Text: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58


    OCR Scan     		C12SS BFR30 BFR31 IC 4093 pin configuration IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001 PDF

    smd transistor m6

    Abstract: transistor smd marking m6
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KST9015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Complementary to KST9014 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		KST9015 OT-23 KST9014 -100mA, -10mA -10mA 30MHZ smd transistor m6 transistor smd marking m6 PDF

    2SA812

    Abstract: Diode marking m7 m6 marking sot-23
    Text: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous


    Original     		2SA812 OT-23 08-Dec-06 -10mA OT-23 2SA812 Diode marking m7 m6 marking sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9015 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V


    Original     		MMS9015 OT-23 -55OC OT-23 10mAdc, 30MHz) PDF

    sot-23 Marking M6

    Abstract: m6 marking transistor sot-23 S9015LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.1


    Original     		OT-23 S9015LT1 OT--23 -100A S9015LT1 037TPY 950TPY 550REF 022REF sot-23 Marking M6 m6 marking transistor sot-23 PDF

    smd transistor m6

    Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1


    Original     		2SA812 OT-23 temperat100 smd transistor m6 transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812 PDF

    marking of m7 diodes

    Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
    Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan     		BCX19 BCX20 BCX17 BCX18. OT-23 BCX20 FMMT-A13 FMMT-A14 marking of m7 diodes ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B PDF

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


    OCR Scan     		BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2 PDF

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n PDF

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan     		FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors PDF

    transistor marking code 7E SOT-23

    Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
    Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.


    OCR Scan     		BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9015 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


    Original     		MMS9015 OT-23 -55OC OT-23 100uAdc, PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		2SA812 hFE600. OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		2SA812 hFE600. OT-23 PDF

    sot-23 MARKING CODE G1

    Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
    Text: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,


    OCR Scan     		FMMT-A55 FMMT-A56 FMMT-A06. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 sot-23 MARKING CODE G1 code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking PDF

    A12 marking

    Abstract: FMMT-A92R A92 at device marking code S4 Diode marking m7 marking 7E Marking H2 transistor dg sot-23 FMMT-A42 FMMT-A43
    Text: 4 FERRANTI semiconductors FMMT-A92 FMMT-A93 PNP S ilico n Planar High V o lta g e T ra n sis to rs G ENER AL D E S C R IP T IO N These plastic encapsulated, general purpose transistors are designed fo r applications requiring high b re a k d o w n voltages,


    OCR Scan     		FMMT-A92 FMMT-A93 FMMT-A42 FMMT-A43. OT-23 FMMT-A93 FMMT-A13 FMMT-A14 A12 marking FMMT-A92R A92 at device marking code S4 Diode marking m7 marking 7E Marking H2 transistor dg sot-23 FMMT-A43 PDF

    SOT-23 marking l31

    Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
    Text: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan     		FMMT2369 OT-23 Continuo00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C SOT-23 marking l31 wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 PDF