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    2SC1623 Search Results

    2SC1623 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SC1623-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1623-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1623(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC1623-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1623(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC1623(0)-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
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    2SC1623 Price and Stock

    Nextgen Components 2SC1623

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623 Reel 993,000 12,000
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    Micro Commercial Components 2SC1623-L6-TP

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623-L6-TP Reel 9,000 3,000
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    2SC1623-L6-TP Cut Tape 1,382 1
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    2SC1623-L6-TP Digi-Reel 1
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    Mouser Electronics 2SC1623-L6-TP 17,573
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    EVVO Semiconductor 2SC1623

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623 Cut Tape 2,928 1
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    2SC1623 Digi-Reel 1
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    2SC1623 Reel 3,000
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    Comchip Technology Corporation Ltd 2SC1623-L5-HF

    TRANS NPN 0.1A 60V SOT-23
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    DigiKey 2SC1623-L5-HF Reel 3,000
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    Mouser Electronics 2SC1623-L5-HF
    • 1 $0.23
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    Micro Commercial Components 2SC1623-L5-TP

    Interface
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    DigiKey 2SC1623-L5-TP Bulk 3,000
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    Mouser Electronics 2SC1623-L5-TP 5,173
    • 1 $0.15
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    Find more 2SC1623 price and stock on Findchips.com

    2SC1623 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC1623 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SC1623 Kexin NPN Silicon Transistor Original PDF
    2SC1623 Micro Commercial Components TRANS GP BJT NPN 50V 0.1A 3SOT-23 Original PDF
    2SC1623 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC1623 NEC AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Original PDF
    2SC1623 NEC Semiconductor Selection Guide Original PDF
    2SC1623 Transys Electronics Plastic-Encapsulate Transistors Original PDF
    2SC1623 TY Semiconductor NPN Silicon Transistor - SOT-23 Original PDF
    2SC1623 Various Russian Datasheets Transistor Original PDF
    2SC1623 Weitron NPN General Purpose Transistors Original PDF
    2SC1623 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1623 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1623 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC1623 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1623 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC1623 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1623 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1623 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC1623 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1623-L NEC Silicon Transistor Original PDF

    2SC1623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1623 sot-23

    Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


    Original     		PDF 2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7

    2SA812K

    Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
    Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA


    Original     		PDF 2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135

    2SC1623K

    Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
    Text: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View


    Original     		PDF 2SC1623K OT-23 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B 28-Jan-2011 2SC1623K SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


    Original     		PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    C1984

    Abstract: 2SC1623
    Text: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15


    Original     		PDF 2SC1623 C1984 2SC1623

    hFE-200

    Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC1623 100mA hFE-200 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23

    npn sot23 l6

    Abstract: 2SC1623 marking 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 npn sot23 l6 2SC1623 marking 2SC1623

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking
    Text: 2SC1623 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC1623 OT-23 100mA 062in 300uS TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:


    Original     		PDF OT-23 OT-23 2SC1623 100mA,

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: 2SC1623
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V Maximum Ratings Symbol V CEO


    Original     		PDF 2SC1623 OT-23 350us, Transistor hFE CLASSIFICATION Marking CE 2SC1623

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    MARKING L4

    Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage


    Original     		PDF OT-23-3L OT-23-3L 2SC1623 100mA, MARKING L4 l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AU DI O FREQU EN CY GEN ERAL PU RPOSE AM PLI FI ER N PN SI LI CON T RAN SI ST OR M I N I M OLD 3 1 ̈ 2 DESCRI PT I ON SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s


    Original     		PDF 2SC1623 OT-23 2SC1623 2SC1623L-x-AE3-R 2SC1623G-x-AE3-R QW-R206-100

    2SA812A

    Abstract: 2SC1623A
    Text: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)


    Original     		PDF 2SA812A 2SC1623A 2SA812A 2SC1623A

    2SC1623

    Abstract: 2SC1623-L4
    Text: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA


    Original     		PDF 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23 2SC1623

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC1623 100mA

    2SA812

    Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
    Text: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF 2SA812 2SC1623 OT-23 -100mA -10mA 062in Width300uS 2SA812 m6 marking transistor sot-23 2SA812M6 2SA812-M6

    2SC1623

    Abstract: L4 SOT23-3 TRS1623
    Text: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original     		PDF 2SC1623 TRS1623 OT-23 100mA, 2SC1623 L4 SOT23-3

    bvceo

    Abstract: No abstract text available
    Text: 2SC1623F 150 mA, 60 V NPN Epitaxial Planar Transistor Elektronische Bauelemente DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80


    Original     		PDF 2SC1623F 2SC1623F 100mA, 150mA 100MHz Width380s, 01-June-2002 bvceo

    Untitled

    Abstract: No abstract text available
    Text: • v - 7*- f t h NEC ' > U = i > h 7 > y x ^ S ilico n T ra n s is to r 2SC1623 N P N l t f ^ ^ y 7 M ^ > y n > b ^ > m ' s 7 > m $ m m e A - Ì 7 U 7 K lC fflt U T M J S T 'T o 0 2 S A 8 1 2 ¿; 3 > 7 ° U ;< 2 . 8 ± 0.2 1.5 U î f f f l f è t t o O h F E * '" l'o


    OCR Scan     		PDF 2SC1623

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range


    OCR Scan     		PDF OT-23 2SC1623

    2SA812

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.


    OCR Scan     		PDF 2SA812 2SC1623 IEI-1209) 2SA812

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS i r m illim e te rs • Com plem entary to 2SC1623 • High DC C u rrent Gain: hpg = 200 TY P . V c e 5 - 6 .0 V , lc = —1.0 m A


    OCR Scan     		PDF 2SA812 2SC1623