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    BFR31 Price and Stock

    onsemi BFR31LT1

    JFET N-CH SOT23-3
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    DigiKey BFR31LT1 Reel 6,000
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    NXP Semiconductors BFR31,235

    JFET N-CH 10MA SOT23
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    onsemi BFR31LT1G

    JFET N-CH SOT23-3
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    DigiKey BFR31LT1G Reel 6,000
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    NXP Semiconductors BFR31,215

    JFET N-CH 10MA SOT23
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    DigiKey BFR31,215 Digi-Reel 1
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    Amphenol Corporation SLBFR319L

    Connector Circular Socket 19 Position Straight Cable Mount 19 Terminal 1 Port - Bulk (Alt: SLBFR319L)
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    Avnet Americas SLBFR319L Bulk 12 Weeks 10
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    Mouser Electronics SLBFR319L
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    BFR31 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR31 NXP Semiconductors BFR31 - N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 1 to 5 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; VDSmax: 25 V; YFS: 1.5 to 4.5 ms Original PDF
    BFR31 Philips Semiconductors N-Channel Field-Effect Transistor Original PDF
    BFR31 Philips Semiconductors N-Channel Field-Effect Transistor Original PDF
    BFR31 Motorola European Master Selection Guide 1986 Scan PDF
    BFR31 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR31 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFR31 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR31 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR31 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR31 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BFR31 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR31 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR31 Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF
    BFR31 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BFR31 Unitra Cemi Transistor Scan PDF
    BFR31,215 NXP Semiconductors N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 1 to 5 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; VDSmax: 25 V; YFS: 1.5 to 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR31,215 NXP Semiconductors BFR31 - TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal Original PDF
    BFR31,235 NXP Semiconductors N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 1 to 5 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; VDSmax: 25 V; YFS: 1.5 to 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR31,235 NXP Semiconductors BFR31 - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
    BFR31/C,215 NXP Semiconductors BFR31/C - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF

    BFR31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC237

    Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage


    Original     		PDF BFR30LT1 BFR31LT1 236AB) BFR30LT1 CHAR218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement

    BFR30

    Abstract: BFR31 MDA669 MDA670
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel


    Original     		PDF BFR30; BFR31 MAM385 BFR30: BFR31: R77/02/pp13 BFR30 BFR31 MDA669 MDA670

    BFR31

    Abstract: marking M2p 21 sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel


    Original     		PDF BFR30; BFR31 BFR31 MAM385 BFR30: BFR31: R77/02/pp13 771-BFR30-T/R BFR30 marking M2p 21 sot23

    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


    Original     		PDF 2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457

    BFR31

    Abstract: BFR30
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product specification N-channel field-effect transistors


    Original     		PDF BFR30; BFR31 BFR30: BFR31: MAM385 SCA56 117067/00/02/pp12 BFR31 BFR30

    BFR30LT1

    Abstract: BFR31 BFR30 BFR31LT1
    Text: MOTOROLA Order this document by BFR30LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage


    Original     		PDF BFR30LT1/D BFR30LT1 BFR31LT1 236AB) BFR30LT1 BFR31 BFR30 BFR31LT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max


    Original     		PDF BFR30LT1 BFR31LT1 236AB) BFR30LT1

    BFR30LT1

    Abstract: BFR30 BFR31 BFR31LT1
    Text: MOTOROLA Order this document by BFR30LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage


    Original     		PDF BFR30LT1/D BFR30LT1 BFR31LT1 236AB) BFR30LT1/D* BFR30LT1 BFR30 BFR31 BFR31LT1

    BFR30

    Abstract: BFR30LT1 BFR31 BFR31LT1
    Text: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max


    Original     		PDF BFR30LT1 BFR31LT1 236AB) r14525 BFR30LT1/D BFR30 BFR30LT1 BFR31 BFR31LT1

    BFR30

    Abstract: BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BFR31LT1G
    Text: BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BFR30LT1, BFR31LT1 BFR30LT1/D BFR30 BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BFR31LT1G

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel


    Original     		PDF BFR30; BFR31 MAM385 BFR30: BFR31: R77/02/pp13

    BFR30

    Abstract: BFR30LT1 BFR31 BFR31LT1
    Text: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max


    Original     		PDF BFR30LT1 BFR31LT1 236AB) r14525 BFR30LT1/D BFR30 BFR30LT1 BFR31 BFR31LT1

    Untitled

    Abstract: No abstract text available
    Text: BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BFR30LT1, BFR31LT1 BFR30LT1/D

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    BFR31

    Abstract: BFR30LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T A m p lifie rs BFR30LT1 BFR31LT1 N -C h a n n e l I 2 SOURCE 1 DRAIN 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -2 3 TO -236A B MAXIMUM RATINGS Rating Symbol Value V DS 25 Vdc VGS 25 Vdc Symbol Max Unit PD 225 mW 1.8


    OCR Scan     		PDF BFR30LT1 BFR31LT1 -236A BFR31

    BFR31

    Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
    Text: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd


    OCR Scan     		PDF BFR30LT1 BFR31LT1 BFR30LT1 BFR31LT1 OT-23 O-236AB) 2N545> BFR30 BFR31 BFR30 BFR31 2N5457 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET

    BFR30

    Abstract: BFR31 marking M2p 21 sot23 m2p SOT23 MDA660
    Text: Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. 3 • Low level general purpose amplifiers in thick and


    OCR Scan     		PDF BFR30; BFR31 BFR30: BFR30 BFR31 marking M2p 21 sot23 m2p SOT23 MDA660

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB TH ER M A L CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C r »j a 556


    OCR Scan     		PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30LT1 BFR30 BFR31

    IC 4093 pin configuration

    Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
    Text: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58


    OCR Scan     		PDF C12SS BFR30 BFR31 IC 4093 pin configuration IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001

    Untitled

    Abstract: No abstract text available
    Text: _ BFR30 BFR31 JK N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a m icrom iniature plastic envelope. It is intended fo r low level general purpose amplifiers in thick and thin -film circuits.


    OCR Scan     		PDF BFR30 BFR31

    buz90af

    Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
    Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391


    OCR Scan     		PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163

    Untitled

    Abstract: No abstract text available
    Text: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.


    OCR Scan     		PDF BFR30 BFR31 bbS3T31 Q05S143 bb53T31

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel 2 SOURCE 1 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage VdS 25 Vdc G a te -S o u rce Voltage vgs 25 Vdc Symbol


    OCR Scan     		PDF BFR30LT1 BFR31LT1 -236A 3b725S

    BFR30

    Abstract: BFR31
    Text: M A X IM U M RATINGS Symbol Value Unit Drain-S ource Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB THERM AL CHARACTERISTICS Characteristic Symbol Max Pd 225 mW Total Device Dissipation FR-5 B oard,*


    OCR Scan     		PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30 BFR31