Untitled
Abstract: No abstract text available
Text: SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ SSM6J23FE TENTATIVE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 160 mΩ (max) (@VGS = -4.0 V)
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SSM6J23FE
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ke marking transistor
Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
Text: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.
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2SK1062
2SJ168.
SC-59
ke marking transistor
2SJ168
2SK1062
marking transistor KE
marking jyw
JYW marking
marking ke toshiba
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA PHOTOCOUPLER TLP620 D4 SERIESf TLP621(D4)SERIES, TLP750(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP620, TLP620-2, TLP620-3, TLP620-4, TLP621, TLP621-2, TLP621-3, TLP621-4, TLP750,
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TLP620
TLP621
TLP750
VDE0884
TLP620,
TLP620-2,
TLP620-3,
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP759 D4 TOSHIBA PHOTOCOUPLER T• Ik B P 7« «R# IQ # Ii n d —r iy ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)’, which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0)
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TLP759
VDE0884
TLP759,
TLP759F
TLP759
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2GWJ42
Abstract: No abstract text available
Text: TOSHIBA 2GWJ42 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 2GWJ42 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • Average Forward Current : I f AV = 2-0A (Ta = 25°C) Low Forward Voltage : V f M = 0.55V (Max.) M A X IM U M RATINGS (Ta = 25°C)
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2GWJ42
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kj 004
Abstract: 2GWJ42C TOSHIBA RECTIFIER
Text: TOSHIBA 2GWJ42C TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 2GWJ42C Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • €E Average Forward Current : Ip AV = 2.0A (Ta = 25°C) Low Forward Voltage : V f M ~ 0.55V (Max.) M A X IM U M RATINGS (Ta = 25°C)
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2GWJ42C
kj 004
TOSHIBA RECTIFIER
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1SV271
Abstract: No abstract text available
Text: TOSHIBA 1SV271 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV271 V H F -U H F BAND RF ATTENUATOR APPLICATIONS • • • Useful for Small Size Tuner Small Total Capacitance : Cx = 0.25pF Typ. Low Series Resistance : rs = 3 0 (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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1SV271
10juA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance
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2SK1062
2SJ168.
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ke marking transistor
Abstract: marking IAY 2SA1873 2SC4944 2SC494
Text: TOSHIBA 2SA1873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 873 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High Current : VCEO= _ 5 0 V , I c = - 150mA (MAX.) High hjpE Excellent hjpg Linearity
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2SA1873
2SC4944
150mA
ke marking transistor
marking IAY
2SA1873
2SC494
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
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2SJ440-Y
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diode bridge toshiba
Abstract: 1SV252
Text: TOSHIBA 1SV252 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 5 2 Unit in mm V H F -U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1 .2 5 Í 0 .1 oo + ' 2 • a M A X IM U M RATINGS Ta = 25°C SYMBOL RATING UNIT Reverse Voltage VR 50 V Forward Current
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1SV252
SC-70
100ju
300ju
diode bridge toshiba
1SV252
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1SS315
Abstract: No abstract text available
Text: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current
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1SS315
1SS315
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Untitled
Abstract: No abstract text available
Text: 1SV290 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV290 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 16 TYP. Low Series Resistance : rs = 0.92H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV290
0014g
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP731 D4 SERIES,TLP741 (D4)SERIES TOSHIBA PHOTOCOUPLER TLP731(D4)SERIES f TLP741(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP731, TLP732, TLP741G, TLP741J Type designations for ‘Option : (D4)’, which are tested under VDE0884 requirements.
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TLP731
TLP741
TLP741
VDE0884
TLP731,
TLP732,
TLP741G,
TLP741J
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION 03.2±O.2 10 .3 M A X . CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Vr rm = 600 V Average Output Rectified Current I0 = 10 A
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10JL2CZ47A
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ke marking transistor
Abstract: TRANSISTOR rty marking IAY 2SJ338 2SK2162
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gs = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.)
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2SK2162
2SJ338
ke marking transistor
TRANSISTOR rty
marking IAY
2SK2162
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5TUZ52C TO SHIBA RECTIFIER SILICON DIFFUSED TYPE 5TUZ52C HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, Unit in mm CO LO R TV DAM PER-diode • 15.5 ± 0 .5 VRRM= 1500 V Repetitive Peak Reverse Voltage • Average Forward Current l F (AV) =
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5TUZ52C
961001EAA2'
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1SS367
Abstract: marking OE MARKING L toshiba USC
Text: 1SS367 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Low Forward Voltage : Vjn = 0.23V TYP. Unit in mm + 0.2 1.2 5 - 0. )Ijr = 5mA M. oo M A X IM U M RATINGS (Ta = 25°C) 4- i
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1SS367
1SS367
marking OE
MARKING L toshiba USC
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HN3C01F
Abstract: No abstract text available
Text: T O S H IB A HN3C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C01F TV TUNER, VHF CONVERTER APPLICATION. TV VHF RF AMPLIFIER APPLICATION. Unit in mm • Including Two Devices in SM6 Super Mini Type with 6Leads • Low Reverse Transfer Capacitance : Cre = 0.38pF (Typ.)
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HN3C01F
N3C01F
1400MHz
HN3C01F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7S02F/FU 2-Input NOR Gate The TC7S02 is a high speed C2MOS 2-Input NOR Gate fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.
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TC7S02F/FU
TC7S02
TC74HC
Rtn75MÃ
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 3DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 3DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS V r r m = 200V Repetitive Peak Reverse Voltage ! f (AV) = 3.0A Average Forward Current Very Fast Reverse-Recovery Time trr = 35ns (Max.)
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3DL41A
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Untitled
Abstract: No abstract text available
Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA
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2SA1954
--15mV
--10mA/
500mA
1001EA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 3DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 3DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS V r r m = 200V Repetitive Peak Reverse Voltage ! f (AV) = 3.0A Average Forward Current Very Fast Reverse-Recovery Time trr = 35ns (Max.)
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3DL41A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS I- 0.5 • • • • With Built-in Bias Resistors
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RN2407
RN2408
RN2409
RN2407,
RN2408,
RN1407
RN2407
RN2408
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