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    MARKING GA SOT363 Search Results

    MARKING GA SOT363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING GA SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    On semiconductor date Code sot-223

    Abstract: marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SC-74, SOT-23, SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-323, SOT-343, SOT-363, TSFP-3, TSFP-4


    Original     		PDF SC-74, OT-23, OT-143, SCT-595, SCT-598 SC-75, OT-323, OT-343, OT-363, OD-323, On semiconductor date Code sot-223 marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363

    On semiconductor date Code

    Abstract: on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16
    Text: Package Information Disrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6, MW4 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer WH S


    Original     		PDF OT-23, OT-143, OT-323, OT-343, OT-363 OD-123, OD-323 OT-223, CSOG5813 OT-143 On semiconductor date Code on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16

    MMIC marking code SC

    Abstract: avago Date code character identifies month of manufacture marking CODE GA sot363 MMIC SOT 363 marking code ga sot 363 rf mmic marking code 09 SOT363 MMIC SOT 363 marking CODE 63 A004R MGA-87563 MGA-87563-BLK
    Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-87563 MGA-87563 3V LNA, 4.5mA Low Current, 0.5-4GHz, SOT363 SC-70 Description Lifecycle status: Active Features The MGA-87 is a 3V part with low noise figure at low current up to 4.5GHz. It is housed in the


    Original     		PDF MGA-87563 OT363 SC-70) MGA-87 OT-363 MGA-87563 MGA-87563-TR1 MMIC marking code SC avago Date code character identifies month of manufacture marking CODE GA sot363 MMIC SOT 363 marking code ga sot 363 rf mmic marking code 09 SOT363 MMIC SOT 363 marking CODE 63 A004R MGA-87563-BLK

    2n7002kdW

    Abstract: No abstract text available
    Text: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		PDF 2N7002KDW 500mA 200mA OT-363 2002/95/EC OT-363 MIL-STD-750, 200mA 2n7002kdW

    On semiconductor date Code

    Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363


    Original     		PDF OT-23, OT-143, SCT-595, SCT-598 OT-323, OT-343, OT-363 OD-123, OD-323, SCD-80 On semiconductor date Code SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363

    MMIC SOT 363 marking CODE 86

    Abstract: MMIC SOT 363 marking CODE 86 low noise MGA-86563 MMIC SOT 363 marking CODE 86X marking 86 SOT363 A004R MGA-86563-BLK MGA-86563-BLKG MGA-86563-TR1 marking CODE GA sot363
    Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-86563 MGA-86563 5V LNA, 20dB High Gain, 0.5-6GHz, SOT363 SC-70 Description Lifecycle status: Active Features The MGA-86 is a 5V part with high gain and low noise figure. It is housed in the miniature


    Original     		PDF MGA-86563 OT363 SC-70) MGA-86 OT-363 MGA-86563 OT-363/SC-70) MMIC SOT 363 marking CODE 86 MMIC SOT 363 marking CODE 86 low noise MMIC SOT 363 marking CODE 86X marking 86 SOT363 A004R MGA-86563-BLK MGA-86563-BLKG MGA-86563-TR1 marking CODE GA sot363

    barcode label infineon

    Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
    Text: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4


    Original     		PDF OT-143, SCT-595, SCT-598 SC-75, OT-343, OT-363, OT-223, MW-12 OT-89 MW-12 barcode label infineon SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363

    PJ4N

    Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference


    Original     		PDF 2002/95/EC OT-363 PJ4N PJ4N3KDW MARKING GA SOT-363 DM800

    ECG001C-500

    Abstract: SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


    Original     		PDF ECG001 OT-89 OT-363 ECG001 fea4-000 AP-000487-000 AP-000515-000 AP-000516-000 ECG001C ECG001C-500 SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000

    MGA-85563

    Abstract: MARKING GA SOT-363 A004R MGA-85563-BLK MGA-85563-TR1 marking CODE GA sot363 MGA 85563 MGA-85 PHEMT marking code B 85X MARKING RESISTOR
    Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-85563 MGA-85563 3V LNA, 12 to 17dBm Adjustable OIP3, 0.8-6GHz, SOT363 SC-70 Description Lifecycle status: Active Features The MGA-85 is a 3V part with high gain and low noise figure. It is housed in the miniature


    Original     		PDF MGA-85563 17dBm OT363 SC-70) MGA-85 OT-363 15-30mA MGA-85563 MARKING GA SOT-363 A004R MGA-85563-BLK MGA-85563-TR1 marking CODE GA sot363 MGA 85563 PHEMT marking code B 85X MARKING RESISTOR

    Untitled

    Abstract: No abstract text available
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference


    Original     		PDF OT-363 RB500V-40

    PJ4N

    Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2002/95/EC IEC61249 OT-363 RB500V-40 PJ4N marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW

    Untitled

    Abstract: No abstract text available
    Text: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. VOLTAGE


    Original     		PDF BC846BPN 100mA 2002/95/EC IEC61249 OT-363, 2011-REV

    Transistor TT 2246

    Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
    Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:


    Original     		PDF ATF-36163 OT-363 SC-70) Transistor TT 2246 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P

    BC846BPN

    Abstract: No abstract text available
    Text: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. 65 Volts


    Original     		PDF BC846BPN 100mA 2002/95/EC OT-363, MIL-STD-750, 2011-REV BC846BPN

    MARUWA CAPACITORS "H series"

    Abstract: transistor "micro-x" "marking" 3 Micro-X Marking E
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


    Original     		PDF ECG002 OT-89 OT-363 ECG002 29dBm 1000MHz. AP-000487-000 AP-000515-000 MARUWA CAPACITORS "H series" transistor "micro-x" "marking" 3 Micro-X Marking E

    marking CODE GA sot363

    Abstract: atf 36163 Low Noise Amplifier Transistor TT 2246 A004R ATF-36163 MGA-86563 ATF-36163-BLKG marking 34 sot-363 rf GM 2310 A SOT 363 marking code 62 low noise
    Text: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC‑70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12


    Original     		PDF ATF-36163 ATF-36163 OT-363 5989-1915EN AV02-1441EN marking CODE GA sot363 atf 36163 Low Noise Amplifier Transistor TT 2246 A004R MGA-86563 ATF-36163-BLKG marking 34 sot-363 rf GM 2310 A SOT 363 marking code 62 low noise

    BCs 43 TRANSISTOR

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1

    8 pin ic 3844 for 5 volts

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107

    Transistor TT 2246

    Abstract: A004R ATF-36163 ATF-36163-BLK ATF-36163-TR1
    Text: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of


    Original     		PDF ATF-36163 ATF-36163 OT-363 SC-70) 5965-4747E 5989-1915EN Transistor TT 2246 A004R ATF-36163-BLK ATF-36163-TR1

    PJ4N

    Abstract: No abstract text available
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)


    Original     		PDF

    AT-32063

    Abstract: AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70
    Text: Agilent AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of


    Original     		PDF AT-32063 5965-8921E 5989-2645EN AT-32063 AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70

    Transistor TT 2246

    Abstract: TT 2246 transistor
    Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Lead-free Option Available • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz


    Original     		PDF ATF-36163 OT-363 SC-70) ATF-3610025 5965-4747E 5989-1915EN Transistor TT 2246 TT 2246 transistor

    Untitled

    Abstract: No abstract text available
    Text: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. 65 Volts


    Original     		PDF BC846BPN 100mA 2002/95/EC OT-363, MIL-STD-750, 2011-REV