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    MARKING G2 SOT363 Search Results

    MARKING G2 SOT363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING G2 SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


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    Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


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    Si1901DL OT-363 SC-70 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


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    Si1902DL OT-363 SC-70 S-03969--Rev. 28-May-01 PDF

    Si1901DL

    Abstract: D234
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


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    Si1901DL OT-363 SC-70 S-01886--Rev. 28-Aug-00 D234 PDF

    Si1907DL

    Abstract: No abstract text available
    Text: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX


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    Si1907DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


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    Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 08-Apr-05 PDF

    Si1902DL SOT-363

    Abstract: marking code pa Si1902DL "marking code PA"
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


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    Si1902DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 Si1902DL SOT-363 marking code pa "marking code PA" PDF

    Si1901DL

    Abstract: vishay siliconix code marking
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


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    Si1901DL OT-363 SC-70 18-Jul-08 vishay siliconix code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX


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    Si1907DL OT-363 SC-70 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


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    Si1902DL OT-363 SC-70 S-99185--Rev. 01-Nov-99 PDF

    Si1903DL

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.995 @ VGS = -4.5 V "0.44 1.190 @ VGS = -3.6 V "0.40 1.80 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QA XX


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    Si1903DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    71080

    Abstract: Si1902DL SOT-363 Si1902DL
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


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    Si1902DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 71080 Si1902DL SOT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code


    Original
    Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51075--Rev. 13-Jun-05 PDF

    71080

    Abstract: Si1902DL
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original
    Si1902DL OT-363 SC-70 S-20880--Rev. 10-Jun-02 71080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original
    Si1900DL OT-363 SC-70 S-01458--Rev. 10-Jul-00 PDF

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code


    Original
    Si1900DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


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    Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 18-Jul-08 PDF

    Si1906DL

    Abstract: No abstract text available
    Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code


    Original
    Si1906DL OT-363 SC-70 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code


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    Si1906DL OT-363 SC-70 08-Apr-05 PDF

    Si1906DL

    Abstract: No abstract text available
    Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code


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    Si1906DL OT-363 SC-70 S-01885--Rev. 28-Aug-00 PDF

    Marking G2

    Abstract: BCR108S BG3430R
    Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes


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    BG3430R OT363 Marking G2 BCR108S BG3430R PDF

    BG3430R

    Abstract: Marking G2 BCR108S
    Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range


    Original
    BG3430R OT363 BG3430R Marking G2 BCR108S PDF

    Untitled

    Abstract: No abstract text available
    Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes


    Original
    BG3430R OT363 PDF

    BCR108S

    Abstract: BG5120K k914
    Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction


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    BG5120K OT363 BCR108S BG5120K k914 PDF