marking g1
Abstract: G1 marking sot23 mark G1 SOT-23 sot-23 Marking G1 G1 SOT-23 BFS20 marking G1 02 MARKING G1 SOT23 marking G1 sot-23
Text: SEMICONDUCTOR BFS20 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G1 No. 1 Item Marking Device Mark G1 BFS20 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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BFS20
OT-23
marking g1
G1 marking sot23
mark G1 SOT-23
sot-23 Marking G1
G1 SOT-23
BFS20
marking G1 02
MARKING G1 SOT23
marking G1 sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
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OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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sot23 g1
Abstract: MMBT5551
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010
sot23 g1
MMBT5551
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TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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BFS20
Abstract: No abstract text available
Text: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
BFS20
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marking G1
Abstract: No abstract text available
Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)
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MMBT5551
OT-23
MMBT5401
100MHz
marking G1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5551
C-120
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT5551
MMBT5401
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
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Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N
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OD110
OD323
OD523
OT54variant
OT143B
OT143R
OT323
OT343N
OT343R
OT363
Field-Effect Transistors
SOT54variant
diodes PACKAGE
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery
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DMN3730UFB4
AEC-Q101
DS35017
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V BVCES > 700V BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
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APT17
MIL-STD-202,
200mg
DS36298
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Untitled
Abstract: No abstract text available
Text: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A
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APM2701CG
OT-23-6
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marking g1
Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
OT-23
marking g1
marking HA 7 sot23
transistor bfs20
BFS20
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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