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    DMN62D1SFB

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADV AN CE I N FORM AT I ON V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications


    Original
    PDF DMN62D1SFB DS35252 DMN62D1SFB

    DMN62D1SFB

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications


    Original
    PDF DMN62D1SFB AEC-Q101 DS35252 DMN62D1SFB

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V


    Original
    PDF DMN62D1SFB DS35252 DMN62D1SFB

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V 0.41A  Low Gate Threshold Voltage 1.6 @ VGS= 4.5V


    Original
    PDF DMN62D1SFB DS35252 DMN62D1SFB