diode pj 916
Abstract: IC la 4148
Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode pj 916
IC la 4148
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BD1501
Abstract: No abstract text available
Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B
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1S922
BAS20
BAX16
H300A
O-236AB
r0-236
LL-34
O-236
DO-35
BD1501
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1N4770
Abstract: No abstract text available
Text: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol
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IN5230B
Abstract: 5246B 1n 5252b zener 5242B 1N5000 5232b 1N5248B 1N5000 SERIES
Text: 1N5000B series Diodes, Zener, 500 mW, leaded These glass-sealed Zener diodes are suitable for lead mounting on printed circuit boards. They can be used to regulate voltages between 4 and 24 V. Dimensions Units : mm CATHODE BAND <£ 0 . 5 ± 0 . I Features
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1N5000B
DO-35
IN5000B
IN5230B
5230BR.
1N5000
5246B
1n 5252b zener
5242B
5232b
1N5248B
1N5000 SERIES
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IN3155
Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values
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diode 4483
Abstract: 1N4471
Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.
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1N4496
N6491
diode 4483
1N4471
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1N1183
Abstract: 1N3768
Text: SCS-THOMSON 1N 1183/84/1N 1186 —> 90 1N 3766/1N 3768 [» [H i [i[L Œ O T 2 *S RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP A B S O L U T E R A T IN G S (limiting values P aram e ter Value Unit
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1183/84/1N
3766/1N
140-C
90/1N
3766/1N3768
250cm.
310cm.
1N1183
1N3768
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Untitled
Abstract: No abstract text available
Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 M¡erosemi Corp. j ' The dtOOe experts SCOTTSDALE, 4 / ☆JANS^ 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • M ic ro m in ia tu re packag e. H ig h p e rfo rm a n c e characteristics. S ta b le o p era tio n at te m p e ra tu re s to 2 0 0 ° C .
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1N4460
1N4496
1N6485
1N6491
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1n939
Abstract: 939AB 939B 1N935 935A 1n938 1N937 938a N937 N935B
Text: SbE ]> • 7^237 0 0 4 1 5 2 ? 604 ■ SG TH SGS-THOMSON -f-lj-f/ 1N 935,A,B 1N 939,A,B [» K IL iO T « ! S G S- TH O n S O N TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING A B S O LU TE R ATING S limiting values
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0041S2Ã
1n939
939AB
939B
1N935
935A
1n938
1N937
938a
N937
N935B
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Js SMD MARKING CODE SOT23
Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003
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BAS28
BAS56
CLL914
CLL2CJ03
CLL4150
CLL4448
CLL5001
CMPD914
CMPD1001
CMPD1001A
Js SMD MARKING CODE SOT23
SMD MARKING CODE M 4 Diode
smd diode A82
1N4148 diode SMD
marking 46 sot-23
DIODE SMD MARKING 5C
SOT23 DIODE marking CODE 28
sot-23 MARKING AAD
marking A82 SOT-23
Diode smd code cm
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON ^ 7 # [M û[M iajO T ô*S 1N 3 1 5 4 , 1 N 3157,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING s - " ' DO 35 (Glass) A B S O L U T E R A TIN G S (limiting values)
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1N4565
Abstract: IN4568 1n4573 45B4 IN4583A 1n4572 4566A
Text: SbE ] • 7 T ST E3 7 0 0 4 1 5 3 4 T44 ■ SGTH s 6 s-thohson S G S -T H O M S O N 1 N 4 5 6 5 ,A -> 1 N 4 5 8 4 ,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values)
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7TSTE37
1N4565
IN4568
1n4573
45B4
IN4583A
1n4572
4566A
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1N1341
Abstract: 1N3988 1348B 1346b 1341B 1344B
Text: SGS-THOMSON 1N 1341B/42B/1N 1344B -4 48B 1N 3988/1 M 3990 RECTIFIER DIODES • STANDARD RECTIFER . HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP A B S O L U T E R A TIN G S limiting values Unit V alu e P aram e ter Symbol A verage F o rw ard C urrent*
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1341B/42B/1N
1344B
1342B
1345B
1346B
1347B
1348B
180cm.
220cm.
1N1341
1N3988
1341B
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IN4370A
Abstract: IN751a in749a IN4370 IN759A IN4372 IN751 in748a Zener Diode 12v 400mW 1N4372
Text: s t c d | THOMSON 7 ^ 2 3 7 a o a a T r .tt-o * ! Q THOMSON-CSF DIVISION SEMICONDUCTEURS - IN 4370 A — 1N 4372 A IN 746 A — 1N 759 A • ^ 59C 0 2 4 1 3 ZENER DIODES DIODES ZENER D Ptot = 4 0 0 mW 2 ^ V < V z T n o n i< 1 2 V 400 m W hermetically sealed glass silicon Zener
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QGQ5413
1N4372
400mW
pui20
DO-35
CB-1021
IN4370A
IN751a
in749a
IN4370
IN759A
IN4372
IN751
in748a
Zener Diode 12v 400mW
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1n4148
Abstract: 1n916 1N4606 1N4150 diode 1N916 1n4148 general diode 1n4153 914-R
Text: 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 . 5 ± 0.1 Features • available in DO-35 package
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1N4148
1N914
1N916
1N4150
1N4153
1N4448
1N4606
DO-35
1n916
1N4606
diode 1N916
1n4148 general diode
1n4153
914-R
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1N3496
Abstract: Thomson-CSF semiconductor GE-229 1N3498 1N3499 1N3500 IN3600 diodes de regulation de tension IN3496
Text: S G S'ÏC S —THOMSON ' € D I 7 ^ 2 3 7 0002540 O THOMSON'CSF * 1N 3496- ^ 1 N 3500 DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED D IO D ES D E R É FÉR EN CE D E TEN SIO N (CO M PEN SÉES EN TEM PÉRATU RE) EPI Z 59C Û2540
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550C-+
1N3496
1N3499
1N3498
Thomson-CSF semiconductor
GE-229
1N3498
1N3499
1N3500
IN3600
diodes de regulation de tension
IN3496
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T 4148
Abstract: in 4148 MARKING a1n bav 56 lN4148 marquage a7 A7 marking BBY31 dual 4148 SOT-23 4148
Text: A C T IV E COMPONENTS FOR H Y B R ID C IR C U IT S COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S Planar silicon diodes Diodes planar au silicium Type Marking Typa Marquage i l VR V 'o (m A ) VF / (V ) / ü 'f (m A ) max ♦ Ir / (MA) / ' VR (V )
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CB-166
OT-23)
A1N914
BBY31
T 4148
in 4148
MARKING a1n
bav 56
lN4148
marquage a7
A7 marking
dual 4148 SOT-23
4148
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Untitled
Abstract: No abstract text available
Text: SbE D • DD4177Ô SCS-THOMSON 03Ö ■SGTH 1 N 1341B/42B/1N 1344B - ly M M O iO ß S 48B 1N 3988/1M 3990 S G S-TH0MS0N T - o t - n RECTIFIER DIODES ■ STANDARD RECTIFER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values
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DD4177Ã
1341B/42B/1N
1344B
3988/1M
180cm.
220cm
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1N4868
Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
Text: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S
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1N483B-1N486B
1N51I94-1N5196
MIL-S-19500/118C.
1N483B
80ACKAGE:
1N483B,
1N5194,
1N5195,
1N5196.
1N483B-
1N4868
lt 8220
1N483B1
1N4858
1N5194
JAN1N486B
N5194
1N485B
1N486B
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IN2976
Abstract: IN2980 in2990 1N2970B IN3011 IN2974 Thomson CSF ET 3005 1N2970BR IN3015b
Text: STC D I S G S—THOMSON 59C Q T H O M S O N - C S F 7^123? D 0 2 42 2 . 1 N 2 9 7 Q B DIVISION SEMICONDUCTEURS 00Q2M22 T — T'H-O* 1 N 3 0 1 5 B ZENER DIODES DIODES ZENER •% f Ptot — 10 W 10 W silicon Zener diodes : • • 6,8 V < V z j nom ^200 V Hermetically sealed metal according t o '
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1N3015B
CB-33)
1N2970Bâ
1N3016B
1N2970BRâ
1N3015BR
1n3012
IN2976
IN2980
in2990
1N2970B
IN3011
IN2974
Thomson CSF
ET 3005
1N2970BR
IN3015b
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 bE D • 7=12=1237 G G 4 1 7 7 b SCS-THOMSON [M O ^ a m tK g lM K S 2bS ■ SGTH 1N 1183/84/1N 1186 -> 90 1N 3766/1N 3768 G S-THOMSON s T - O h H RECTIFIER DIODES ■ STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values
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1183/84/1N
3766/1N
7T2T237
3/84/1N
N3768_
250cm.
310cm
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1N248B
Abstract: 1196-A RN820 1N1198
Text: e r e T t in iic n u olio-1 numoiiN 248 b -» i n 250 b 1N1N^gs A 1N1198 A l* ^ [i[L i ïï^ ® * S RN 820/R N 1120 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values
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N1198
820/R
820/RN
250cm.
310cm.
1N248B
1196-A
RN820
1N1198
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1198A
Abstract: 1196-A RN820
Text: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*
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820/RN
250cm.
310cm
1198A
1196-A
RN820
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Z808
Abstract: Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860
Text: 1N 5063 - 1N5117 M Z 806 - M Z 890, MZ 210 • MZ 2 4 0 Mierosem i Corp. diode experts SANTA ANA, CA SCOTTSDALE, A Z / For m ore inform ation call: 714 979-8220 3-WATT G USS ZENER DIODES FE A TU R E S • • • • • • • Microminiature package.
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1N5117
P-16J
MZ806
MZ211
MZ111)
1N5117,
Z808
Z226
ANA 608
MZ210
1N5105
marking 1n diode
MZ80
845MZ
Zener 224
Z860
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