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    Microchip Technology Inc 1N3498

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    New Jersey Semiconductor Products, Inc. 1N3498

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    New Jersey Semiconductor Products, Inc. 1N3498A

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    New Jersey Semiconductor Products Inc 1N3498

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    Quest Components 1N3498 714
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    New Jersey Semiconductor Products Inc 1N3498A

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    1N3498 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3498 Advanced Power Devices 6.2V, 250mWt General purpose voltage reference/regulator diode Scan PDF
    1N3498 APD Semiconductor TEMPERATURE COMPENSATED ZENER DIODES Scan PDF
    1N3498 Codi Semiconductor Silicon Diodes Scan PDF
    1N3498 International Semiconductor 6.2V, 250mWt General purpose voltage reference/regulator diode Scan PDF
    1N3498 Microsemi Data Book 1983 Scan PDF
    1N3498 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3498 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3498 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3498 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3498 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3498 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N3498 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N3498 Semitronics 6.2V, 250mWt General purpose voltage reference/regulator diode Scan PDF
    1N3498 SGS-Thomson 6.2V, 250mWt General purpose voltage reference/regulator diode Scan PDF
    1N3498 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    1N3498 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N3498 Thomson-CSF Condensed Data Book 1977 Scan PDF

    1N3498 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N3157A

    Abstract: motorola 239 zener AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S'lE D LVJ 0737135 • • • • • 5 5 630 • A P D T r ^ - t o AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference to Motorola part numbers. For applications where output voltages must remain within narrow limits during changes in input voltage,


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    PDF DO-35 00DD115 1N3157A motorola 239 zener AMERICAN POWER DEVICES 1N938

    Zener Diode 3v 400mW

    Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, I713S DQQD114 Zener Diode 3v 400mW 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"

    IN942

    Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case


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    PDF 00000S1 DO-35 00DD115 IN942 itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938

    1N315

    Abstract: 1N935
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, DO-35 00DD115 1N315 1N935

    1N3155

    Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781


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    PDF D73713S DO-35 00DD115 1N3155 1N9351 AMERICAN POWER DEVICES 1N938

    zl ITT zener

    Abstract: Zener diode itt 150 V zener diode ITT 4.7 V diode ITT 172 c 945 p 239 c AMERICAN POWER DEVICES 1n936 diode zener S3E
    Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case


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    PDF 00000S1 DO-35 00DD115 zl ITT zener Zener diode itt 150 V zener diode ITT 4.7 V diode ITT 172 c 945 p 239 c AMERICAN POWER DEVICES 1n936 diode zener S3E

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, DO-35 3713S

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N47A

    Abstract: No abstract text available
    Text: jemitronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)


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    PDF 1N42S 1N1735 1N2620 1N2620A 1N2620B 1N2621 1N2621A 1N2621S 1N2622 1N2622A 1N47A

    IN827 Temperature Compensated Zener

    Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
    Text: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65


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    PDF 0D0CIL55 T-II-07 1N821Â 1N823Â 1N825* 1N827Â 1N829* 1N3500 1N3496 1N3497 IN827 Temperature Compensated Zener 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827

    1N827A

    Abstract: 1N4565 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N829
    Text: TC ZENER DIODES 250mW cont. Pari# Nominal Zener Voltage Min. Max. Test Current VzOO 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A 1N4565

    diode ys2 100

    Abstract: N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N823 1N34* diode
    Text: INTERNATIONAL SEMICOND •=1000370 0000007 T40 « I S E M 41E T H t- ~o JEDEC REGISTERED, TEMPERATURE 1N4148 SWITCHING DIODE COMPENSATED VOLTAGE REFERENCE DIODES (DO-7 Package MAXIMUM RATINGS MECHANICAL O pe rating Tem perature: -6 5 °C to + 2 0 0 °C H e rm e tic a lly Sealed DO-35


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    PDF 1N821 1N823 1N825 1N827 1N829 1N3500 1N34S6 1N3497 1N3499 diode ys2 100 N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N34* diode

    IN5351

    Abstract: 1N5389 1N4701A IN3998 IN3999 1N9408 1n2046-2 1n93B 1N2765 1N1736A
    Text: discrete devices iomitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon zener diodes N O T E S : T h e fo llo w in g n o te s e x p la in v a ria tio n s in th e s ta n d a rd ty p e n u m b e rs lis t e d fo r S ilic o n Z e n e r D io d e s . “ N o te ” n u m b e rs


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    temperature-compensated zener

    Abstract: ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497 1N821
    Text: FENWAL E L E C T R O N I C S / APD AB 63D DEÌ3Sm Sh3 00916 -f a V □□ □ o n t a " I" TCZENER DIODES T 250mW, TC Type DO-7 Case Zener Voltage Min. Max. vz V Vz V 1N825A 1N827 1N827A 1N829 1N829A 5.9 5.9 6.5 6.5 -5 5 -5 5 -5 5 -5 5 -5 5 °C t o +100 t o +100


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    PDF 250mW, 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 temperature-compensated zener ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497

    1N623A

    Abstract: 1N623 silicon voltage reference diodes TN945 DO13 1n2169 1NB25A 1N2621A 1N428 1N2164A
    Text: lomitronlcr discrete devices SEMICONDUCTORS Sem itronics C orp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Type Norn. Zener Dynamic Zener Voltage, Impedance, Current Vz volts Zz (ohms) lz (mA) 1N428 1N1735 6.2 6.2


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    PDF 1N935 1N935A 1N935B 1N936 1N936A 1N936B 1N937 1N937A 1N937B 1N938 1N623A 1N623 silicon voltage reference diodes TN945 DO13 1n2169 1NB25A 1N2621A 1N428 1N2164A

    DIODE 1N827

    Abstract: No abstract text available
    Text: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C


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    PDF DO-35 1N823 1N827 1N3498 1N4568 1N4571 DO-15 DO-201 DIODE 1N827

    Untitled

    Abstract: No abstract text available
    Text: TC Z E N E R DIODES 250m W Part# 1N4765 1N4765A 1N4766 1N4766A 1N4767 Nom inal Zener Voltage Test Current M axim um Dynamic Impedance Voltage Temperature Stability Temperature Range Typical Temperature Coefficient VZ V •zT(n|A) Zzt I zt (0) AVct maximum (mV)


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    PDF 1N4765 1N4765A 1N4766 1N4766A 1N4767 1N4767A 1N4768 1N4768A 1N4769 1N4701

    1N4T48

    Abstract: 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3496 1N3497 1N3499
    Text: C 0 D I SEMICONDUCTOR INC 2RE D 177S47G OGDGbSS b • C O D I M il 7=0 », 0°i c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta g e C u rre n t mA V o lts 62 62 64 6.4 64 64 65 66 66 66 8 4 8 5 85


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    PDF 177S47G T-n-07 1N821* 1N823Â 1N825Â 1N827Â 1N829* 1N3500 1N3496 1N3497 1N4T48 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3499

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor