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    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
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    MARKING DV4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


    Original     		PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    transistor DV3

    Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SD596 2SB624 200TYP. 100mA) OT-23 BL/SSSTC024 transistor DV3 transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 transistor DV1

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23 2SD596 OT-23 100mA 700mA 700mA,

    transistor dv4

    Abstract: 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4

    transistor dv4

    Abstract: marking DV4 2SD596 2SD596 dv3
    Text: 2SD596 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.7 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. 92¡ À0. 05


    Original     		PDF 2SD596 OT-23-3L 100mA 700mA transistor dv4 marking DV4 2SD596 2SD596 dv3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA 700mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ

    transistor dv4

    Abstract: transistor DV3 2SD596 DV4 sot23
    Text: 2SD596 SOT-23 Transistor NPN SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 DV4 sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ

    transistor dv4

    Abstract: 2SD596 10MHZ 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA) 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SD596 10MHZ 2SB624

    transistor dv4

    Abstract: transistor DV3 2SD596 SOT23-3L
    Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 2SD596 OT-23-3L OT-23-3L 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 SOT23-3L

    TSXCUSB485

    Abstract: allen bradley IEC 60947-5-1 xbtz9780 xbtz9980 modicon tsx NANO XBTGT TSX NANO CABLE xbt n200 xbtz925 Communication cables pin diagram XVMB1RAGS
    Text: Operator dialog 1 Harmony Optimise the creation of your dialogue solutions! 2 Unequalled and of high quality, it is the largest offer on the market. 3 p Simplicity: the clip together components ensure simple and secure assembly. p Ingenuity: LED technology for all


    Original     		PDF TSXETG1000 TSXETG1010 TSXETG3000 TSXETG3010 TSXETG3021 TSXETG3022 TSXCUSB485 allen bradley IEC 60947-5-1 xbtz9780 xbtz9980 modicon tsx NANO XBTGT TSX NANO CABLE xbt n200 xbtz925 Communication cables pin diagram XVMB1RAGS

    2SD596

    Abstract: transistor dv4 2SB624
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 transistor dv4

    2SD596 dv3

    Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 dv3 marking DV4 2SD596 2sd59 transistor dv4

    2SD596A

    Abstract: transistor DV3 D1788 2SB624
    Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)


    Original     		PDF 2SD596A 2SB624 2SD596A transistor DV3 D1788

    Untitled

    Abstract: No abstract text available
    Text: HellermannTyton HellermannTyton is a leading, global manufacturer of systems and solutions which help worldclass customers better manage and identify wire, cable, and components. HellermannTyton is proud to manufacture products in Milwaukee, Wisconsin, our


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PCA8538 Automotive 102 x 9 Chip-On-Glass LCD segment driver Rev. 2 — 24 September 2013 Product data sheet 1. General description The PCA8538 is a fully featured Chip-On-Glass COG 1 Liquid Crystal Display (LCD) driver, designed for high-contrast Vertical Alignment (VA) LCD with multiplex rates up to


    Original     		PDF PCA8538 PCA8538

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


    OCR Scan     		PDF SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557

    2SD596

    Abstract: D1298 SSA250 transistor dv4
    Text: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.


    OCR Scan     		PDF 2SD596 2SD596 D1298 SSA250 transistor dv4

    D 596

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SD 596 ELECTRON DEVICE / AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD D E S C R IP TIO N PACKAG E D IM E N S IO N S The 2S D 596 is designed fo r use in small type equipm ents especially recom ­


    OCR Scan     		PDF 2SD596 2SB624 D 596

    transistor DV3

    Abstract: 2sd 596 2sd59
    Text: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom ­


    OCR Scan     		PDF 2SD596 2SD596 transistor DV3 2sd 596 2sd59