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    MARKING D2 SOT Search Results

    MARKING D2 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING D2 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCW32 7

    Abstract: MARK D2 SOT23 BCW32 marking d2 SOT23
    Text: SEMICONDUCTOR BCW32 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 D2 1 2 Item Marking Description Device Mark D2 BCW32 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		BCW32 OT-23 BCW32 7 MARK D2 SOT23 BCW32 marking d2 SOT23 PDF

    BCW32

    Abstract: BCW31 BCW33
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS


    Original     		OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 PDF

    TRANSISTOR 10003

    Abstract: STA346 marking d2
    Text: STA346 Semiconductor PNP Silicon Transistor Features • Low saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability Ordering Information Type NO. Marking STA346 Package Code D2 SOT-89 Outline Dimensions


    Original     		STA346 STA346 OT-89 KST-8008-000 -100mA -500mA, -50mA TRANSISTOR 10003 marking d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS


    Original     		OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW31/32 SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BCW 31 D1 BCW 32 D2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		BCW31/32 OT-23 BCW31/BCW32 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC506E2 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification DMC206E2 in SMini6 type package • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: D2


    Original     		DMC506E2 DMC206E2 UL-94 DSC2G02 DMC506E20R PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC206E2 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification DMC506E2 in Mini6 type package • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: D2


    Original     		DMC206E2 DMC506E2 UL-94 DSC2G02 DMC206E20R PDF

    71080

    Abstract: Si1902DL
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		Si1902DL OT-363 SC-70 S-20880--Rev. 10-Jun-02 71080 PDF

    marking code PB

    Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51614--Rev. 05-Sep-05 marking code PB SI1900DL-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		Si1900DL OT-363 SC-70 S-01458--Rev. 10-Jul-00 PDF

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code


    Original     		Si1900DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		Si1901DL OT-363 SC-70 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		Si1902DL OT-363 SC-70 S-03969--Rev. 28-May-01 PDF

    Si1907DL

    Abstract: No abstract text available
    Text: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX


    Original     		Si1907DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 08-Apr-05 PDF

    Si1902DL SOT-363

    Abstract: marking code pa Si1902DL "marking code PA"
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		Si1902DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 Si1902DL SOT-363 marking code pa "marking code PA" PDF

    Si1901DL

    Abstract: vishay siliconix code marking
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		Si1901DL OT-363 SC-70 18-Jul-08 vishay siliconix code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX


    Original     		Si1907DL OT-363 SC-70 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


    Original     		Si1902DL OT-363 SC-70 S-99185--Rev. 01-Nov-99 PDF

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 18-Jul-08 PDF

    Si1903DL

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.995 @ VGS = -4.5 V "0.44 1.190 @ VGS = -3.6 V "0.40 1.80 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QA XX


    Original     		Si1903DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    71080

    Abstract: Si1902DL SOT-363 Si1902DL
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


    Original     		Si1902DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 71080 Si1902DL SOT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code


    Original     		Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51075--Rev. 13-Jun-05 PDF