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    MARKING CODE TO ON SEMICONDUCTOR 720 Search Results

    MARKING CODE TO ON SEMICONDUCTOR 720 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE TO ON SEMICONDUCTOR 720 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600AF650TSF Air-co00 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600CF650TSF 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600AF650TSF 60747and

    MIXA600PF650TSF

    Abstract: No abstract text available
    Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600PF650TSF 60747and MIXA600PF650TSF

    Untitled

    Abstract: No abstract text available
    Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600CF650TSF Air-00 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600PF650TSF 60747and

    52s marking code transistor

    Abstract: 52s marking code 52s marking 2SK3633 SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3633 52s marking code transistor 52s marking code 52s marking 2SK3633 SC-65

    MPC7450

    Abstract: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD
    Text: Freescale Semiconductor, Inc. Advance Information MPC7450RXPXPNS/D Rev. 0, 11/2001 Freescale Semiconductor, Inc. MPC7450 Part Number Specification for the XPC7450RXnnnPx Series Motorola Part Numbers Affected: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD


    Original     		PDF MPC7450RXPXPNS/D MPC7450 XPC7450RXnnnPx XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD MPC7450EC/D) XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD

    k3798

    Abstract: No abstract text available
    Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798 k3798

    K3566 transistor

    Abstract: K3566 2SK3566 transistor k3566 K3566 data k356
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 K3566 transistor K3566 2SK3566 transistor k3566 K3566 data k356

    k3799

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 k3799

    transistor K3565

    Abstract: K3565 transistor K3565 data k3565 2sk3565
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3565 transistor K3565 K3565 transistor K3565 data k3565 2sk3565

    K3473

    Abstract: TOSHIBA K3473 2SK3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 2SK3473

    toshiba k3700

    Abstract: 2SK3700
    Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)


    Original     		PDF 2SK3700 900HIBA toshiba k3700 2SK3700

    k3799

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 k3799

    wifi schematic

    Abstract: LTE Tx BAW filter band 40 CSP-5CT 885033-EVB LTE bandpass filter LTE filter band 40 wifi antenna schematic Wifi code 885033 Coexistence
    Text: 885033 2.4GHz WLAN/BT LTE Co-Existence Filter Applications • • • • • • • WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points


    Original     		PDF B38/B40 wifi schematic LTE Tx BAW filter band 40 CSP-5CT 885033-EVB LTE bandpass filter LTE filter band 40 wifi antenna schematic Wifi code 885033 Coexistence

    marking code motorola ic

    Abstract: MOTOROLA IC PLL OF IC 733 XPC7450RX733PD dd marking B650 MPC7450 XPC7450RX600PD XPC7450RX667PD
    Text: Freescale Semiconductor, Inc. Advance Information MPC7450RXPXPNS/D Rev. 0, 11/2001 MPC7450 Part Number Specification for the XPC7450RXnnnPx Series Freescale Semiconductor, Inc. C IN Motorola Part Numbers Affected: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD


    Original     		PDF MPC7450RXPXPNS/D MPC7450 XPC7450RXnnnPx XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD MPC7450EC/D) marking code motorola ic MOTOROLA IC PLL OF IC 733 XPC7450RX733PD dd marking B650 XPC7450RX600PD XPC7450RX667PD

    K3566 transistor

    Abstract: K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 K3566 transistor K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566

    K3565 transistor

    Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565

    toshiba k3700

    Abstract: 2SK3700 K3700 2SK37 VDD400 k370
    Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3700 toshiba k3700 2SK3700 K3700 2SK37 VDD400 k370

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564

    K3473

    Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN


    OCR Scan     		PDF Q62702-F1239 Q62702-F1309 OT-223 flE35b05 D1E17DD EHP0055Ã

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28