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Abstract: No abstract text available
Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600CF650TSF
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Untitled
Abstract: No abstract text available
Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600AF650TSF
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Untitled
Abstract: No abstract text available
Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600PF650TSF
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Untitled
Abstract: No abstract text available
Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3798
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k3798
Abstract: 2SK3798 equivalent 2SK3798 K379
Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3798
k3798
2SK3798 equivalent
2SK3798
K379
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K3799
Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
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2SK3799
K3799
2SK3799 equivalent
transistor 2SK3799
2sk3799
K3799 Transistor
K379
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transistor K3565
Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3565
transistor K3565
K3565 transistor
k3565
K356
K3565 data
2SK3565 datasheet
2SK3565 equivalent
2SK3565
12160TC
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k3564
Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3564
k3564
transistor K3564
2SK3564
MARKING toshiba 133
LC1M-US-DC24
k3564 transistor
transistor K3564 5 a
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K4113
Abstract: 2sk4113 K4113 POWER TRANSISTOR
Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK4113
K4113
2sk4113
K4113 POWER TRANSISTOR
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k3473
Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3473
k3473
TOSHIBA K3473
transistor k3473
2SK3473
SC-65
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LTE filter band 40
Abstract: 885007 LTE band 40 LQW15AN1N0C00 LTE bandpass filter
Text: 885007 2436 MHz BAW Filter Applications WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points Applicable reject bands: 2.6 GHz WiMAX/LTE,
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40/Indian
LTE filter band 40
885007
LTE band 40
LQW15AN1N0C00
LTE bandpass filter
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transistor BC 458
Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
transistor BC 458
BC 458 transistor
transistor BC 548 Data
bc546 fairchild
BC546BTA
bc546
TRANSISTOR B 546b
BC 546A
of transistor BC548
bc 547 b transistor
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CSP-1713
Abstract: CSP marking code
Text: Part Number 885007 2436 MHz BAW Filter Data Sheet Features BAW filter for WiMAX/WLAN/ISM applications Usable bandwidth 72 MHz Low loss Single-ended operation Ceramic chip-scale Package CSP Small Size Hermetic RoHS compliant (2002/95/EC), Pb-free Pb Package
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2002/95/EC)
CSP-1713
CSP-1713
CSP marking code
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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bc549
Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
bc549
transistor BC549 hfe
Transistor NPN BC 549B
BC549 NPN transistor
transistor c 548 c
Transistor Bc547 npn
bc548 fairchild
Amplifier with transistor BC549
TO92-3 Package Dimensions
transistor BC 548 Data
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bc550
Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
bc550
bc550 noise figure
transistor BC 548 Data
transistor NPN 548
BC548 npn
bc550 transistor
transistor bc 548 npn
BC550CTA
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k2845
Abstract: 2SK2845 transistor k2845
Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low leakage current : IDSS = 100 A (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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2SK2845
k2845
2SK2845
transistor k2845
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C5388
Abstract: C5386 transistor C5386 transistor C5388 c5387 transistor C536 c5353 c5344 C5352 c5354
Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy
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CMZ5342B
CMZ5388B
C5385B
CMZ5386B
C5386B
CMZ5387B
C5387B
C5388B
C5388
C5386
transistor C5386
transistor C5388
c5387
transistor C536
c5353
c5344
C5352
c5354
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XTR2N0307
Abstract: No abstract text available
Text: XTRM Series XTR2N0307 HIGH-TEMPERATURE, 30V P-CHANNEL SMALL SIGNAL MOSFET FEATURES DESCRIPTION ▲ Minimum BVDSS = -40V. ▲ Allowed VGS range –5.5V to +5.5V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Low RDS on o XTR2N0307: 7Ω @ 230°C
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XTR2N0307
XTR2N0307:
-900mA
22nsec
25nsec
XTR2N0307
DS-00449-13
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Abstract: No abstract text available
Text: Chip Beads - Multi-layer CTCBF Series Standard From 6 Ω to 2,200 Ω ENGINEERING KIT #16 RoHS Compliant Not shown at actual size. CHARACTERISTICS Description: Standard multi-layer ferrite chip beads Applications: Noise suppression in computer peripherals,
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CTCB0402F:
CTCB0603F:
CTCB0805F:
CTCB1206F:
CTCB1210F:
CTCB1806F:
CTCB1812F:
HP4287A
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vuo2518no
Abstract: No abstract text available
Text: VUO25-18NO8 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-18NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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VUO25-18NO8
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vuo2518no
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Abstract: No abstract text available
Text: VBO22-12NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number VBO22-12NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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Abstract: No abstract text available
Text: VBO22-16NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number VBO22-16NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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94SL
Abstract: No abstract text available
Text: 94SL Vishay OS-CON Solid Aluminum Capacitors with Organic Semiconductor Electrolyte FEATURES • Super miniaturized 0.197" [5 mm] in height • Capacitors operate at + 105 °C • 94SL capacitors are ideal for use in VCR’s, car stereos and other products where a
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94SL
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