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    K379 Search Results

    K379 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3794-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3794(0)-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3793(0)-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 12A 125Mohm Mp-45F/To-220 Visit Renesas Electronics Corporation
    2SK3793-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 12A 125Mohm Mp-45F/To-220 Visit Renesas Electronics Corporation

    K379 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K 37 90 Gedore Torque IMPACT SOCKET 1.1/2"" 90 MM Original PDF
    K 37 95 Gedore Torque IMPACT SOCKET 1.1/2"" 95 MM Original PDF
    SF Impression Pixel

    K379 Price and Stock

    Rochester Electronics LLC 2SK3796-2-TL-E

    JFET N-CH 10MA SMCP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3796-2-TL-E Bulk 360,000 2,664
    • 1 -
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    • 10000 $0.11
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    TE Connectivity HK379T-000

    ALR-7060-VPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HK379T-000 Box 988 1
    • 1 $21.64
    • 10 $16.323
    • 100 $13.7114
    • 1000 $12.59208
    • 10000 $12.59208
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    Avnet Americas HK379T-000 Bulk 18 Weeks, 6 Days 100
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    • 100 $9.71967
    • 1000 $8.35071
    • 10000 $8.07691
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    Mouser Electronics HK379T-000
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    • 1000 $11.02
    • 10000 $11.02
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    Onlinecomponents.com HK379T-000 7
    • 1 -
    • 10 $10.57
    • 100 $9.36
    • 1000 $9.22
    • 10000 $9.22
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    Master Electronics HK379T-000 7
    • 1 -
    • 10 $10.57
    • 100 $9.36
    • 1000 $9.22
    • 10000 $9.22
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    NMB Technologies Corporation 29SM-K379-00V

    STEP MOTOR HYBRID UNIPOLAR 24V
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    DigiKey 29SM-K379-00V Bulk 12 1
    • 1 $75.7
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    Sager 29SM-K379-00V 1
    • 1 $99.28
    • 10 $90.39
    • 100 $79.68
    • 1000 $79.68
    • 10000 $79.68
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    Ruland Manufacturing Co Inc MCPRSK37-9-A

    9 MM CONTROLFLEX COUPLING HUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCPRSK37-9-A Bag 5 1
    • 1 $49.56
    • 10 $49.56
    • 100 $49.56
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    Ruland Manufacturing Co Inc MCPTSK37-9-A

    9 MM CONTROLFLEX COUPLING HUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCPTSK37-9-A Bag 5 1
    • 1 $49.56
    • 10 $49.56
    • 100 $49.56
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    Find more K379 price and stock on Findchips.com

    K379 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3797

    Abstract: 2SK3797 2SK3797 equivalent
    Text: K3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		PDF 2SK3797 SC-67 2-10U1B K3797 2SK3797 2SK3797 equivalent

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B

    K3797

    Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
    Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)

    K3797 Transistor

    Abstract: K3797 2SK3797 54V4 transistor k3797 K379
    Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379

    K3799

    Abstract: 2sk3799 K379
    Text: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		PDF 2SK3799 SC-67 2-10U1B K3799 2sk3799 K379

    k3798

    Abstract: 2SK3798 K379
    Text: K3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		PDF 2SK3798 SC-67 2-10U1B k3798 2SK3798 K379

    Untitled

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798

    k3799

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 k3799

    k3798

    Abstract: 2SK3798
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		PDF 2SK3798 k3798 2SK3798

    K3799

    Abstract: 2sk3799
    Text: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		PDF 2SK3799 SC-67 2-10U1B K3799 2sk3799

    k3798

    Abstract: 2SK3798 equivalent 2SK3798 K379
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798 k3798 2SK3798 equivalent 2SK3798 K379

    K3799

    Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379

    k3799

    Abstract: K3799 Transistor
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)


    Original     		PDF 2SK3799 k3799 K3799 Transistor

    K3799

    Abstract: transistor 2SK3799 K3799 Transistor 2SK3799
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 K3799 transistor 2SK3799 K3799 Transistor 2SK3799

    Untitled

    Abstract: No abstract text available
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799

    Untitled

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798

    K3799

    Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799
    Text: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3799 K3799 2sk3799 2SK3799 equivalent transistor 2SK3799

    k3797

    Abstract: K3797 Transistor
    Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK3797 k3797 K3797 Transistor

    k3798

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798 k3798

    k3798

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798 k3798

    k3797

    Abstract: 2SK3797
    Text: K3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		PDF 2SK3797 SC-67 2-10U1B k3797 2SK3797

    k3639

    Abstract: K379 K3793 ECKN
    Text: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION


    OCR Scan     		PDF K3639 K3793 BBF16002N BBF16002N K379 ECKN

    D836A

    Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
    Text: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483


    OCR Scan     		PDF MN115P 1204B 1215P MN1221 1227B 1237/A 1277B MN1281 MN12811 MN12821 D836A k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a

    545 voltsensor

    Abstract: HYS3o
    Text: Models 545 and 546 Features • Dual Set-Point High and Low ■ Triple Output (HI, GO, LO) High Level Output (100 mA) . ■ Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance ■ Variable Hysteresis ■ Latching Capability


    OCR Scan     		PDF MK378 MK379 r2401 000157b 545 voltsensor HYS3o