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    MARKING CODE S2A SOT23 Search Results

    MARKING CODE S2A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING CODE S2A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s2A SOT23

    Abstract: marking s2A sot23 SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 s2A SOT23 marking s2A sot23 SMBT3906U

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ TRANSISTOR S2A SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3906

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking s2a SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3906 s2A SOT23 infineon marking code B2 SOT23

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U

    H12E

    Abstract: h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e
    Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


    Original     		PDF Q68000-A4417 OT-23 H12E h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e

    H12E

    Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
    Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


    Original     		PDF Q68000-A4417 OT-23 H12E h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon

    s2A SOT23

    Abstract: SOT-23 marking S2A
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm • PNP epitaxial silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = -40V 0.103(2.60) • Collector current IC = -200mA


    Original     		PDF MMBT3906 -200mA OT-23 OT-23, MIL-STD-750, RB500V-40 s2A SOT23 SOT-23 marking S2A

    s2A SOT23

    Abstract: No abstract text available
    Text: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA


    Original     		PDF MMBT3906 -200mA TS16949 AECQ101 2002/95/EC IEC61249 OT-23 OT-23, MIL-STD-750, s2A SOT23

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA


    Original     		PDF MMBT3906 OT-23 -200mA 2002/95/EC IEC61249 OT-23, MIL-STD-750,

    MMBT3906

    Abstract: MMBT3906_R1_00001 MMBT3906R
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA


    Original     		PDF MMBT3906 -200mA 2002/95/EC IEC61249 OT-23 OT-23, MIL-STD-750, MMBT3906 MMBT3906_R1_00001 MMBT3906R

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA


    Original     		PDF MMBT3906-AU OT-23 -200mA TS16949 AEC-Q101 2002/95/EC IEC61249 OT-23, MIL-STD-750,

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    LTYB

    Abstract: ltc833 LTYB MARKING non electrolytic capacitor esl esr
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-5 TSOT-23 254mm MO-193 1983fa LTYB ltc833 LTYB MARKING non electrolytic capacitor esl esr

    LTC1429

    Abstract: No abstract text available
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 LTC1928-5 LTC3200 LTC1429

    LTC1983-5

    Abstract: JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 Step-up 1.2V to 3V 60mA SOT-23 Vin 12v charge pump sot LTC1429
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 LTC1928-5 LTC3200 LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 Step-up 1.2V to 3V 60mA SOT-23 Vin 12v charge pump sot LTC1429

    LTC1429

    Abstract: FET MARKING MO sot-23 ltc833 LTC1983ES6-5
    Text: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-5 OT-23 254mm SC-74A LTC1429 FET MARKING MO sot-23 ltc833 LTC1983ES6-5

    JMK316BJ106ML

    Abstract: LTC1983-3 LTC1983-5 LTC1983ES6-3 LTC1983ES6-5 "marking s1a" sot-23 LTC1429
    Text: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 JMK316BJ106ML LTC1983-3 LTC1983-5 LTC1983ES6-3 LTC1983ES6-5 "marking s1a" sot-23 LTC1429

    marking code S6 SOT-23

    Abstract: LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 marking code S6 SOT-23 LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b