MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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9930gm
Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Text: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter
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AP9930GM
9930GM
9930gm
AP9930GM
DEVICE MARKING p1g
marking code P1D
9930G
P2d MARKING CODE
n-channel so8 60v
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930AGM-HF-3
AP9930AGM-HF-3
AP9930A
9930AGM
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930GM-HF-3
AP9930GM-HF-3
AP9930
9930GM
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OFL-12
Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Text: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely
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1-9807-020-MS/AC
OFL-12
SFZ-3A
jds optics switch 1
Seiko fc
electronic passive components catalog
sii Product Catalog
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BCR108W
Abstract: BFR92W E6327 VSO05561
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92W
VSO05561
OT323
BCR108W
BFR92W
E6327
VSO05561
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Untitled
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
AEC-Q101
OT323
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marking p1S
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
AEC-Q101
OT323
marking p1S
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E 94733
Abstract: marking p1S E 94733 3
Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
BFT92W
OT323
E 94733
marking p1S
E 94733 3
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marking p1S
Abstract: BCR108W BFR92W BFT92W
Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Complementary type: BFT92W PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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BFR92W
BFT92W
OT323
marking p1S
BCR108W
BFR92W
BFT92W
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2N AND 2P-CHANNEL ENHANCEMENT
Abstract: LCD Monitor Inverter marking p2s PMOS-2 NMOS-2 DEVICE MARKING p1g code n1d marking code p1S 2 CHANNEL N-CHANNEL MOSFET marking code P1D
Text: AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9903M
2N AND 2P-CHANNEL ENHANCEMENT
LCD Monitor Inverter
marking p2s
PMOS-2
NMOS-2
DEVICE MARKING p1g
code n1d
marking code p1S
2 CHANNEL N-CHANNEL MOSFET
marking code P1D
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NMOS2
Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
Text: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9902M
9902M
NMOS2
transistor marking code N1G
NMOS-2
2N AND 2P-CHANNEL ENHANCEMENT
DEVICE MARKING p1g
AF9902M
Anachip
f 1 p2s
P1D mosfet
LCD Monitor Inverter
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C3025LS
Abstract: No abstract text available
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
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AF9901M
Abstract: NMOS-2 LCD Monitor Inverter 2N AND 2P-CHANNEL ENHANCEMENT P2d MARKING CODE NMOS-1 N and P MOSFET
Text: AF9901M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9901M
AF9901M
NMOS-2
LCD Monitor Inverter
2N AND 2P-CHANNEL ENHANCEMENT
P2d MARKING CODE
NMOS-1
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: MSP430L092 MSP430C09x www.ti.com SLAS673 – SEPTEMBER 2010 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • • • Ultra-Low Supply Voltage ULV Range – 0.9 V to 1.5 V (1 MHz) – 1.5 V to 1.65 V (4 MHz) Low Power Consumption – Active Mode (AM): 45 µA/MHz (1.3 V)
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MSP430L092
MSP430C09x
SLAS673
16-Bit
20-kHz
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marking p1S
Abstract: Q62702-F1488 GMA marking
Text: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-323
Q62702-F1488
900MHz
Dec-10-1996
marking p1S
Q62702-F1488
GMA marking
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Untitled
Abstract: No abstract text available
Text: MSP430C11x1, MSP430F11x1A MIXED SIGNAL MICROCONTROLLER SLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2008 D Low Supply Voltage Range 1.8 V to 3.6 V D Ultralow Power Consumption D D D D D − Active Mode: 160 A at 1 MHz, 2.2 V − Standby Mode: 0.7 μA
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MSP430C11x1,
MSP430F11x1A
SLAS241I
16-Bit
32-kHz
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Untitled
Abstract: No abstract text available
Text: MSP430C11x1, MSP430F11x1A MIXED SIGNAL MICROCONTROLLER SLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2008 D Low Supply Voltage Range 1.8 V to 3.6 V D Ultralow Power Consumption D D D D D − Active Mode: 160 A at 1 MHz, 2.2 V − Standby Mode: 0.7 μA
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MSP430C11x1,
MSP430F11x1A
SLAS241I
16-Bit
32-kHz
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Untitled
Abstract: No abstract text available
Text: MSP430C11x1, MSP430F11x1A MIXED SIGNAL MICROCONTROLLER SLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2008 D Low Supply Voltage Range 1.8 V to 3.6 V D Ultralow Power Consumption D D D D D − Active Mode: 160 A at 1 MHz, 2.2 V − Standby Mode: 0.7 μA
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MSP430C11x1,
MSP430F11x1A
SLAS241I
16-Bit
32-kHz
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Untitled
Abstract: No abstract text available
Text: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such
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MB86681
L/NPD/SRE-L/DS/1223
MB86681
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
053SbOS
900MHz
15nlA
23Sb05
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E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
900MHz
E 94733
p1S SOT-89
BFr pnp transistor
SPICE 2G6
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip P I C 1 6 C 5 8 A EPROM-Based 8-Bit CMOS Microcontroller FEATURES FIGURE A - PIN CONFIGURATIONS C om patibility • Pin and softw are com patible w ith PIC16C54, PIC16CR54, PIC16C54A and PIC16C56 devices PDIP, S O I C High-Performance RISC-like CPU
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PIC16C54,
PIC16CR54,
PIC16C54A
PIC16C56
200ns
12-bit
DS30225B-page
blD32D]
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