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    C3025LS

    Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
    Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS marking p1S marking c3025LS DS3582 DMHC3025LSD-13 PDF

    C3025LS

    Abstract: diode n1s
    Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS diode n1s PDF

    C3025LS

    Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS PDF