Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Search Results

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N P CHANNEL dual POWER MOSFET

    Abstract: marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A STC4516 SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet
    Text: STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially


    Original     		PDF STC4516 STC4516 -30V/-7 22m-ohm -30V/-5 40m-ohm 10m-ohm 16m-ohm STC5416 N P CHANNEL dual POWER MOSFET marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet

    STN9926

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet
    Text: STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STN9926 STN9926 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original     		PDF TPC8A01 Qg17nC TPC8A01

    NP70N04MUG

    Abstract: 70N04 NP70N04MUG-S18-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) 70N04 NP70N04MUG-S18-AY

    k4202

    Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS

    D1859

    Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note


    Original     		PDF NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) D1859 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY

    2sk4202

    Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42

    transistor K4145

    Abstract: 2SK4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET

    d1941

    Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note


    Original     		PDF 2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41

    d1941

    Abstract: NP161N04TUG MP-25ZT 161N04
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note


    Original     		PDF NP161N04TUG NP161N04TUG NP161N04TUG-E1-AY NP161N04TUG-E2-AY O-263-7pin MP-25ZT) d1941 MP-25ZT 161N04

    55N03

    Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N03SUG-E1-AY Note


    Original     		PDF NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG-E1-AY NEC to-252 marking information

    D1866

    Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY NEC MARKING CODE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY NEC MARKING CODE

    NEC 110N04

    Abstract: 110N04 NP110N04PDG NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP110N04PDG-E1-AZ


    Original     		PDF NP110N04PDG NP110N04PDG NP110N04PDG-E1-AZ NP110N04PDG-E2-AZ O-263 MP-25ZP) O-263) NEC 110N04 110N04 NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756

    D1866

    Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING


    Original     		PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY

    180N04

    Abstract: d1889 NP180N04TUG TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP180N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP180N04TUG-E1-AY


    Original     		PDF NP180N04TUG NP180N04TUG NP180N04TUG-E1-AY NP180N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 180N04 d1889 TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC

    2SK4201

    Abstract: 2SK4201-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42

    transistor K4145

    Abstract: 2sk4145
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		PDF 2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145

    K4201

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 K4201

    d1875

    Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note


    Original     		PDF NP160N04TUG NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) d1875 160N04 D18754EJ1V0DS00 NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin

    d1859

    Abstract: 109N04 NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note


    Original     		PDF NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) d1859 109N04 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY

    TPC8005-H

    Abstract: No abstract text available
    Text: TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed U−MOS TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package


    Original     		PDF TPC8005-H TPC8005-H

    55N03

    Abstract: NP55N03SUG NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N03SUG-E1-AY Note


    Original     		PDF NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR

    k2995

    Abstract: transistor marking MH 2SK2995
    Text: 2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance : |Yfs| = 30 S (typ.)


    Original     		PDF 2SK2995 K2995 k2995 transistor marking MH 2SK2995

    90n04

    Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY


    Original     		PDF NP90N04VUG NP90N04VUG NP90N04VUG-E1-AY NP90N04VUG-E2-AY O-252 AEC-Q101ems, 90n04 90n04 UG NP90N04V DIODE MARKING code UG 45