Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference
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OT-363
RB500V-40
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PDF
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PJ4N
Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2002/95/EC
IEC61249
OT-363
RB500V-40
PJ4N
marking code ga sot 363
MARKING CODE LA sot363
sot-363 marking DS
marking CODE GA sot363
ZE marking sot-363
SOT 363 marking CODE LA
sot363 XI
PJ4N3KDW
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PDF
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PJ4N
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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Original
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2N7002KDW
OT-363
500mA
200mA
2002/95/EC
IEC61249
2010-REV
RB500V-40
2N7002KDW
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PDF
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K2765
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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Original
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2N7002KDW
500mA
200mA
2002/95/EC
IEC61249
OT-363
OT-363
2010-REV
RB500V-40
K2765
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PDF
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sot-363 n-channel mosfet
Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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Original
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2N7002KDW
500mA
200mA
2002/95/EC
IEC61249
OT-363
OT-363
2010-REV
RB500V-40
sot-363 n-channel mosfet
K27 SOT-363 MARKING
K2765
SOT 363 marking CODE LA
2N7002K
k27 sot-363
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PDF
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Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0 • RDS(ON), VGS@4.0V,IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference
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Original
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2011/65/EU
2013-REV
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PDF
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NPN 3906
Abstract: TRANSISTOR MARKING TE SOT363
Text: MMDT3946 COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • • • • Collector current Ic = 200mA Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMDT3946
200mA
2002/95/EC
IEC61249
300MHz
100MHz
OT-363,
MIL-STD-750,
2011-REV
NPN 3906
TRANSISTOR MARKING TE SOT363
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) • Collector-emitter voltage V CE =40V 0.010(0.25) • Collector current I C = 600mA • /
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Original
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MMDT4401
600mA
OT-363,
MIL-STD-750,
2011-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMDT3904
200mA
2002/95/EC
IEC61249
OT-363,
MIL-STD-750,
2011-REV
RB500V-40
MMDT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in compliance with EU RoHS 2011/65/EU directive
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Original
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MMDT3904
200mA
2011/65/EU
IEC61249
OT-363,
MIL-STD-750,
2011-REV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMDT3904
200mA
2002/95/EC
IEC61249
OT-363,
MIL-STD-750,
2011-REV
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PDF
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Voltage-HSMS-282A
Abstract: SOT-363 marking jf SOT 363 marking CODE LA HSMS-280A marking CODE 001 hsms280a LA sot363 HSMS2820 LF 28-2P 282A
Text: Wtiat H E W L E T T 1 l/LM P A C K A R D Surface M ount RF Schottky D iodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P /R HSMS 281K/L HSMS 2 8 2 K /L /M /N /P /R F eatu res • U nique co n figu ration s in su rfa ce m ount SOT-363 package
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OCR Scan
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OT-363
SC-70,
280K/L/M/N/P/R
281K/L
282K/L/M/N/P/R
OT-363
HSMS-28jcK
HSMS-282a
HSMS-280a
HSMS-281a
Voltage-HSMS-282A
SOT-363 marking jf
SOT 363 marking CODE LA
HSMS-280A
marking CODE 001
hsms280a
LA sot363
HSMS2820 LF
28-2P
282A
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PDF
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SII907
Abstract: 223S
Text: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8
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OCR Scan
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OT-363
SC-70
150cC
S-99184--Rev.
01-Nov-99
S-99184--
SII907
223S
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PDF
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sot363 marking qs
Abstract: No abstract text available
Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package
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OCR Scan
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1913EDH
SC-70
OT-363
SC-70
S-03175--
05-Mar-01
SM913EDH
sot363 marking qs
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PDF
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Untitled
Abstract: No abstract text available
Text: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost
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OCR Scan
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OT-363
SC-70,
HSMP-386L
389L/R/T/U/V
HSMS-389aâ
HSMP-389a-TR2*
HSMP-389a-TRl*
HSMP-389a-BLK*
HSMP-386L-TR2
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation
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OCR Scan
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OT-363
Q62702-C2495
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PDF
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RQ TRANSISTOR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity
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OCR Scan
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PUMD12
SC-88)
115002/00/01/pp8
RQ TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor
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OCR Scan
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115002/00/02/pp8
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PDF
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bc 494 pnp
Abstract: 847PN
Text: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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OCR Scan
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847PN
847PN
Q62702-C2374
OT-363
bc 494 pnp
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PDF
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Untitled
Abstract: No abstract text available
Text: TC0205AD Vishay Siliconix New Product Dual N- and P-Channel ±20-V Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS V N-Channel 20 r D S (o n) 2.0 @ VGs P-Channel lD(mA) (Q) = 4-5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @Vq s = -4 .5 V -1 8 0 5.0 @V qs = "2 .5 V
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OCR Scan
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TC0205AD
SC-70,
S-0427
16-Jui-01
TC0205AD
S-04279--
16-Jul-01
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PDF
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marking code AVN
Abstract: transistor K 2333 transistor ph 45 AN 6752
Text: DISCRETE SEMICONDUCTORS PUMB4 PNP resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB4
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OCR Scan
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MAM344
SC-88
115002/00/03/pp8
marking code AVN
transistor K 2333
transistor ph 45
AN 6752
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PDF
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PUMX1
Abstract: marking code IC .ztz
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose double transistor
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OCR Scan
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SC-88
115002/00/03/pp8
PUMX1
marking code IC .ztz
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PDF
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Untitled
Abstract: No abstract text available
Text: What HEW LETT mLUM P A C K A R D Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P/R HSMS 281K/L HSMS 282K /L /M /N /P /R Features • Unique configurations in surface mount SOT-363 package - increase flexibility
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OCR Scan
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OT-363
SC-70,
281K/L
HSMS-28
HSMS-282a
HSMS-280a
5966-2049E
5968-2356E
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PDF
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