Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715
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350mW
MMBZ4617
MMBZ4618
MMBZ4619
MMBZ4620
MMBZ4621
MMBZ4622
MMBZ4623
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G2132
Abstract: No abstract text available
Text: G2132 Global Mixed-mode Technology Photoflash Capacitor Charger for DSC Feature Description VCC 2.9V to 5.5V Supply Voltage Operating Range. Suitable voltage range for Battery 1.6V to 9V. Adjustable Output Voltage. Adjustable Peak Current. Charge Complete Indicator.
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G2132
10-lead
G2132
G2132K21U
TDFN2X2-10
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TQFN5X5-40
Abstract: No abstract text available
Text: G2102 Global Mixed-mode Technology Inc. 7-Channel DC-DC Converter for DSC 1MHz Features General Description The G2102 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other
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G2102
CTL234
G2102
TQFN5X5-40
TQFN5X5-40
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G2129
Abstract: SOT23-6 MARKING b4
Text: G2129 Global Mixed-mode Technology 1-2-4-Bit Bidirectional Voltage-Level Translator with Automatic Direction Sensing and ±15kV ESD Protection Features General Description 1.2V to 3.6V on A port and 1.65V to 5.5V on B port VCCA ≤ VCCB VCC Isolation Feature-If Either V Input Is at
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G2129
SC-70-6
OT-363
OT-23-6
OT-23-8
G2129
SOT23-6 MARKING b4
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G2120
Abstract: No abstract text available
Text: G2120 Global Mixed-mode Technology 3 Channels, High Efficiency, Synchronous Step Down with LDO Features Continuous Loading: 3A Buck 1 , 1A (Buck 2 and 3) 1MHz Switching Frequency The converters can operate in 5V systems and have
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G2120
CO331
G2120
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Untitled
Abstract: No abstract text available
Text: G2105 Global Mixed-mode Technology 7-Channel DC-DC Converter for DSC Features General Description 95% Efficient DC/DC Converter. Highly Integrated 7-CH DC/DC with integrated Power MOSFETs. CH1, CH2, CH6 and CH7 Boost-type Synchronous Rectified Current-Mode PWM Converters
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G2105
G2105B)
G2105A)
G2105B
TQFN4X4-32
G2105A
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g86 630 a2
Abstract: T85 "Rocker Switches" PCB mount d5024 7101J1ZQE2 RS-186E U211 U213 SPST Round Red Illuminated Actuator Rocker Switch J51-J61 7301J1
Text: Rockers Product Selection Guide Rocker 7000 E ET T 9000 DA D Miniature Miniature Subminiature Subminiature Power Rocker & Lever Handle Miniature Power Miniature Power Poles/Throws SPDT, DPDT, 3PDT, 4PDT SPDT, DPDT, 3PDT SPST, SPDT, DPDT SPST, SPDT, DPDT DPDT
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GA85
Abstract: marking GA86
Text: Rockers Product Selection Guide Rocker 7000 E ET T 9000 DA D Miniature Miniature Subminiature Subminiature Power Rocker & Lever Handle Miniature Power Miniature Power Poles/Throws SPDT, DPDT, 3PDT, 4PDT SPDT, DPDT, 3PDT SPST, SPDT, DPDT SPST, SPDT, DPDT DPDT
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SW-13A65N-A01
SW-13A65N-A01
125VAC
GA85
marking GA86
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G21 SOT23
Abstract: No abstract text available
Text: Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMG2301U
AEC-Q101
G21 SOT23
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g21 Transistor
Abstract: EEVEB2C100Q EEVEB2C330SQ marking code H16 g1750 marking code g21
Text: Aluminum Electrolytic Capacitor/EB Large Can Size Surface Mount Type Series: EB Type : V • Features Endurance : 105°C 3000 to 5000 h Case size : φ10x13.5 to φ18x21.5 ■ Specifications Category temp. range -25 to +105°C 160 to 450 V .DC Rated W.V. Range
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10x13
18x21
120Hz/
EEVEB2W100Q
EEVEB2W100N
EEVEB2W220N
g21 Transistor
EEVEB2C100Q
EEVEB2C330SQ
marking code H16
g1750
marking code g21
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marking code EB 38
Abstract: EE-79 marking code g21
Text: Aluminum Electrolytic Capacitor/EB Large Can Size Surface Mount Type Series: EB Type : V • Features Japan Endurance : 105°C 3000 to 5000 h Case size : φ10x13.5 to φ18x21.5 ■ Specifications Category temp. range -25 to +105°C Rated W.V. Range Capacitance Tolerance
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10x13
18x21
120Hz/
120Hz)
rat15
marking code EB 38
EE-79
marking code g21
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EEVEB2C470SM
Abstract: ee80
Text: Aluminum Electrolytic Capacitor/EB Large Can Size Surface Mount Type Series: EB Type : V • Features Japan Endurance : 105°C 3000 to 5000 h Case size : φ10x13.5 to φ18x21.5 ■ Specifications Category temp. range -25 to +105°C Rated W.V. Range Capacitance Tolerance
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10x13
18x21
120Hz/
120Hz)
rat15
EEVEB2C470SM
ee80
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Untitled
Abstract: No abstract text available
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS • ID max TA = +25°C RDS(ON) max -20V 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMG2301U
AEC-Q101
DS31848
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DMG2301U
Abstract: DMG2301U-7 J-STD-020D
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • NEW PRODUCT Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMG2301U
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31848
DMG2301U
DMG2301U-7
J-STD-020D
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AEC-Q200-004
Abstract: GCM31 GCM21 GCM catalog
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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C03E-2
AEC-Q200-004
GCM31
GCM21
GCM catalog
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GCM1885C1H
Abstract: GCM1555C1H GCM31MR72A224K GCJ43 GCM31 GCM1885C GCM32ER71H475K GCM43 GCM31CR71C475KA37L GCM21BR71H104KA37L
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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C03E-5
GCM1885C1H
GCM1555C1H
GCM31MR72A224K
GCJ43
GCM31
GCM1885C
GCM32ER71H475K
GCM43
GCM31CR71C475KA37L
GCM21BR71H104KA37L
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GCM219R71C105
Abstract: GCM32ER71H475KA55 GCM188R71H104K gcm1885 GCM1555 AR4100 gcm155r71c104ka55d GCM155R72A102 DC1302 GCM155
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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C03E-4
GCM219R71C105
GCM32ER71H475KA55
GCM188R71H104K
gcm1885
GCM1555
AR4100
gcm155r71c104ka55d
GCM155R72A102
DC1302
GCM155
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GR4 MURATA
Abstract: GCM216R72A103K sharp 0201-a
Text: C03E.pdf May.27,2011 Chip Monolithic Ceramic Capacitors for Automotive Cat.No.C03E-5 C03E.pdf May.27,2011 !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc.
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C03E-5
GR4 MURATA
GCM216R72A103K
sharp 0201-a
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g21 Transistor
Abstract: No abstract text available
Text: D T D 1 1 3 Z K Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in an SMT3 (SMT, SC-59) package • package marking: DTD113ZK; G21 • a built-in bias resistor allows inverter circuit configuration without external
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SC-59)
DTD113ZK;
DTD113ZK
Ta-251C
50ftn
DTD113ZK
g21 Transistor
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siemens MOSFET 14
Abstract: Marking G1s
Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1009S
EHA07215
1009S
Q62702-F1628
OT-143
200MHz
200MHz
siemens MOSFET 14
Marking G1s
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a31s
Abstract: No abstract text available
Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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EHA07215
Q62702-F1487
OT-143
200MHz
a31s
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Untitled
Abstract: No abstract text available
Text: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215
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EHA07215
Q62702-F1613
OT-143
200MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS flE3SbOS OOTODSa TTl BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network i D rain G21 AGC ° - HF °-II— In p u t HF O utp ut
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Q62702-F1498
OT-143
800MHz
BF1005
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jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Text: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,
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2SA1774
2SA1821
2SA1885
2SC4617
2SC4618
2SC4619
2SC4649
2SC4725
2SC4726
2SC4997
jd 1803
otc114
E2p 93 transistor
2SD1834
B14A
DTC143YKA
DTC143ZKA
transistor marking w9
2SA1690
UMW10
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