marking 27A sot-23
Abstract: diode G21
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance
|
Original
|
PDF
|
DMG2301U
AEC-Q101
OT-23
DS31848
marking 27A sot-23
diode G21
|
Untitled
Abstract: No abstract text available
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
|
Original
|
PDF
|
DMG2301U
AEC-Q101
DS31848
|
DMG2301U
Abstract: DMG2301U-7 J-STD-020D
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • NEW PRODUCT Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
|
PDF
|
DMG2301U
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31848
DMG2301U
DMG2301U-7
J-STD-020D
|
Untitled
Abstract: No abstract text available
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(ON) max ID max TA = 25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance
|
Original
|
PDF
|
DMG2301U
OT-23
J-STD-020D
DS31848
|
Untitled
Abstract: No abstract text available
Text: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS • ID max TA = +25°C RDS(ON) max -20V 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
|
Original
|
PDF
|
DMG2301U
AEC-Q101
DS31848
|