Untitled
Abstract: No abstract text available
Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code
|
Original
|
PDF
|
Si5980DU
2002/95/EC
Si5980DUllectual
18-Jul-08
|
c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
|
Original
|
PDF
|
3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
|
transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
|
Original
|
PDF
|
3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
|
G226
Abstract: marking A2 3216L G476 E686 G156 G336 0G106M g686 G335
Text: Tantalum Chip Capacitors SY Standard Ratings Rated voltage v 2.5V Rated Voltage : 2.5V Capacitance Marking EIA (µF)(120Hz) (P, A2, A) size Code Size symbol Series code Tangent of the loss angle (less)(120Hz,20℃) Leakage current (µA, or less) -55℃
|
Original
|
PDF
|
120Hz)
120Hz
100kHz)
3216L
-0E475M-RA2
-0E685M-RA2
-0E106M-RA2
-0G227M-RD0
G226
marking A2
3216L
G476
E686
G156
G336
0G106M
g686
G335
|
v474
Abstract: v684 SYL-1A476M-RB sy 164 MARKing A106 marking v474 V105 MARKING CODE 1C106 a106 capacitor diode v684
Text: Tantalum Chip Capacitors SY Standard Ratings Rated voltage v 35 Rated Voltage : 35V Capacitance Marking EIA (µF)(120Hz) (P, A2, A) size Code Size symbol Series code Tangent of the loss angle (less)(120Hz,20℃) Leakage current (µA, or less) ESR (Ω) (less)
|
Original
|
PDF
|
120Hz)
120Hz
100kHz)
-1V104M-RA
-1V154M-RA
-1V224M-RA
2005/2006E
v474
v684
SYL-1A476M-RB
sy 164
MARKing A106
marking v474
V105 MARKING CODE
1C106
a106 capacitor
diode v684
|
DMA364A2
Abstract: No abstract text available
Text: DMA364A2 Tentative Total pages page DMA364A2 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : G2 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C
|
Original
|
PDF
|
DMA364A2
DMA364A2
|
Si5902DC
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
|
Original
|
PDF
|
Si5902DC
S-62424--Rev.
04-Oct-99
|
Si5902DC
Abstract: Si5902DC-T1 marking code ca
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
|
Original
|
PDF
|
Si5902DC
Si5902DC-T1
S-21251--Rev.
05-Aug-02
marking code ca
|
Untitled
Abstract: No abstract text available
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1902DL
OT-363
SC-70
S-03969--Rev.
28-May-01
|
71080
Abstract: Si1902DL
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1902DL
OT-363
SC-70
S-20880--Rev.
10-Jun-02
71080
|
ChipFET
Abstract: Si5904DC Si5904DC-T1
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code
|
Original
|
PDF
|
Si5904DC
Si5904DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
|
Si1900DL
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1900DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
|
Untitled
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
|
Original
|
PDF
|
Si5902DC
S-62424--Rev.
04-Oct-99
|
Si1902DL SOT-363
Abstract: marking code pa Si1902DL "marking code PA"
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1902DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
Si1902DL SOT-363
marking code pa
"marking code PA"
|
|
|
vishay MOSFET code marking
Abstract: No abstract text available
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
|
Original
|
PDF
|
Si5902DC
Si5902DC-T1
08-Apr-05
vishay MOSFET code marking
|
1012S
Abstract: Q62702-F1627 BF1012S
Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol
|
Original
|
PDF
|
1012S
Q62702-F1627
OT-143
Jul-29-1996
1012S
Q62702-F1627
BF1012S
|
Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715
|
Original
|
PDF
|
350mW
MMBZ4617
MMBZ4618
MMBZ4619
MMBZ4620
MMBZ4621
MMBZ4622
MMBZ4623
|
Si1906DL
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1906DL
OT-363
SC-70
S-01885--Rev.
28-Aug-00
|
Untitled
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
|
Original
|
PDF
|
Si1906DL
OT-363
SC-70
08-Apr-05
|
c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
|
OCR Scan
|
PDF
|
3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
|
403BF
Abstract: No abstract text available
Text: Silicon N Channel MOSFET Tetrode • • BF 997 For VHF applications especially in TV tuners with extended VHF band Integrated suppression network against spurious VHF oscillations Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape
|
OCR Scan
|
PDF
|
Q62702-F993
Q62702-F1055
403BF
|
MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
|
OCR Scan
|
PDF
|
1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
|
marking code ER sot 143
Abstract: No abstract text available
Text: Silicon N Channel MOSFET-Tetrode BF 994 S 0 For VHF applications, especially for input and mixer stages with wide tuning range, e.g. in CATV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 994 S MG
|
OCR Scan
|
PDF
|
Q62702-F963
Q62702-F1020
marking code ER sot 143
|
BF996
Abstract: 393bf BF996S
Text: Silicon N Channel MOSFET Tetrode • • • BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 996 S MH Q62702-F964 Q62702-F1021
|
OCR Scan
|
PDF
|
Q62702-F964
Q62702-F1021
BF996
393bf
BF996S
|
