23146
Abstract: APM7330 ANPEC APM7330J A102 STD-020C APM73
Text: APM7330J Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/8.5A, RDS ON = 19mΩ (typ.) @ VGS = 10V RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Top View of DIP − 8 Reliable and Rugged Lead Free Available (RoHS Compliant)
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APM7330J
APM7330
APM7330
23146
ANPEC
APM7330J
A102
STD-020C
APM73
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C3 1.2AGHZ
Abstract: No abstract text available
Text: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package 26 24 23 22 21 GND 33 20 GND VDD 34 19 VDD VDD 35 GND 36 GND BIAS BIAS 18 VDD 17 GND 37 16 GND
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TAT8804D1H
C3 1.2AGHZ
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Microwave PIN diode spice
Abstract: AN1124 Microwave PIN diode 3810 sc-70 package pcb layout 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode"
Text: Surface Mount RF PIN Low Distortion Attenuator Diodes Technical Data HSMP-381x Series and HSMP-481x Series Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation • Surface Mount Packages – Single and Dual Versions
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HSMP-381x
HSMP-481x
OT-23
OT-323
5968-5427E
Microwave PIN diode spice
AN1124
Microwave PIN diode 3810
sc-70 package pcb layout
381B
HSMP3810
HSMP4810
MARKING E4 "Pin Diode"
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HSMS-38
Abstract: SOT23 Marking Code AB AN1124 381B HSMP3810 HSMP4810 diode marking code RJ MARKING E4 "Pin Diode" HSMP-381x Series HSMP-481X
Text: Surface Mount RF PIN Low Distortion Attenuator Diodes Technical Data HSMP-381x Series and HSMP-481x Series Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation • Surface Mount Packages – Single and Dual Versions
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HSMP-381x
HSMP-481x
OT-23
OT-323
OT-363
SC70-6
5968-5427E
5989-0482EN
HSMS-38
SOT23 Marking Code AB
AN1124
381B
HSMP3810
HSMP4810
diode marking code RJ
MARKING E4 "Pin Diode"
HSMP-381x Series
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Untitled
Abstract: No abstract text available
Text: Agilent HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation Description/Applications The HSMP-381x series is specifically designed for low
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-23
5989-0482EN
5989-2497EN
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AN1124
Abstract: 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode" agilent marking code
Text: Surface Mount RF PIN Low Distortion Attenuator Diodes Technical Data HSMP-381x Series and HSMP-481x Series Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation • Surface Mount Packages – Single and Dual Versions
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HSMP-381x
HSMP-481x
OT-23
OT-323
OT-363
SC70-6
5989-0482EN
5989-2497EN
AN1124
381B
HSMP3810
HSMP4810
MARKING E4 "Pin Diode"
agilent marking code
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agilent model marking code
Abstract: hsms-381x diode marking code E3 sot23
Text: Agilent HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation Description/Applications The HSMP-381x series is specifically designed for low
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-23
5989-2497EN
5989-4025EN
agilent model marking code
hsms-381x
diode marking code E3 sot23
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takamisawa ny24w-k
Abstract: aeg protection relay NY-24W-K Takamisawa NY supi 3 interbus phoenix contacts 30 03 34 7 ibs STME PLC A250 AEG supi interbus BOSCH CL-300
Text: IB ST 24 DO 16 R/S INTERBUS ST Data Sheet Digital Output Module with 16 Relay Outputs 08/1996 Data Sheet Revision A Product Description The IB ST 24 DO 16 R/S module switches 16 digital outputs via relay make contacts. It can switch voltages of up to 230 V AC. The module is a
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16R/S
80-pos.
80-DIK
takamisawa ny24w-k
aeg protection relay
NY-24W-K
Takamisawa NY
supi 3 interbus
phoenix contacts 30 03 34 7
ibs STME
PLC A250 AEG
supi interbus
BOSCH CL-300
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aeg power base 60 b
Abstract: QB18 5153B Bosch Common Rail marking W17 siemens catalog ST TR5 fuse ibs STME Klockner-Moeller 5153B001
Text: IB ST 24 BDO 32/2 Data Sheet INTERBUS Digital Output Module with 32 Channels Data Sheet Revision C 08/1997 Product Description The IB ST 24 BDO 32/2 module transmits 32 digital output signals. It is part of an INTERBUS ST compact station Features - Terminals for 32 binary actuators
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5153B001
5153C
80-pos.
80-DIK
aeg power base 60 b
QB18
5153B
Bosch Common Rail
marking W17
siemens catalog ST
TR5 fuse
ibs STME
Klockner-Moeller
5153B001
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION 6 The UTC UB261 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.
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UB261
UB261
OT-26
QW-R502-A27
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UB261
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION The UTC UB261 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.
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UB261
UB261
OT-26
QW-R502-A27
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5026B
Abstract: aeg power base 60 b ib STME 2754943 A250 A350 A500 IPC620 siemens catalog ST 5026A004 Klockner-Moeller
Text: IB ST 24 DO 16/3 Data Sheet INTERBUS Digital Output Module with 16 Channels Data Sheet Revision B 10/1997 Product Description The IB ST 24 DO 16/3 module transmits 16 digital output signals. It is part of an INTERUS ST compact station. Features - Terminals for 16 digital
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5026B001
5026B
5026B
aeg power base 60 b
ib STME 2754943
A250
A350
A500
IPC620
siemens catalog ST
5026A004
Klockner-Moeller
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ps2009
Abstract: No abstract text available
Text: PI74FCT153T/253T 25Ω Ω Series PI74FCT2153T/2253T High Speed CMOS Dual 4-Input Multiplexer PI74FCT153T/253T Ω Series) PI74FCT2153T/2253T
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PI74FCT153T/253T
PI74FCT2153T/2253T
PI74FCT
PI74FCT245ATQ
245TQ
0010BSC
14-pin
ps2009
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Z9008
Abstract: Single-Cell Battery Protection
Text: AOZ9008DIL Single-Cell Battery Protection IC with Integrated MOSFET General Description Features The AOZ9008DIL is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell
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AOZ9008DIL
AOZ9008DIL
Z9008
Single-Cell Battery Protection
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VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
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VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
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ps2006b
Abstract: MARK A1B SOT23
Text: PI74FCT139/239T Fast CMOS Dual 1-of-4 Decoder PI74FCT139T PI74FCT239T
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PI74FCT139/239T
PI74FCT139T
PI74FCT239T
PI74FCT
PI74FCT245ATQ
245TQ
0010BSC
14-pin
16-pin
ps2006b
MARK A1B SOT23
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marking code diode Eb SMD
Abstract: 3H4 Photocoupler smd marking TB Photocoupler marking code EA SMD 5 pins 3h4 3 pin EL3H4A EL3H4A eVERLIGHT marking code EA SMD Transistor E214129
Text: 4 PIN SOP PHOTOTRANSISTOR AC INPUT PHOTOCOUPLER EL3H4-G Series Features: • AC input response • Current transfer ratio CTR: Min. 20% at IF =±1mA ,VCE =5V • High isolation voltage between input and output (Viso=3750 V rms ) • Compact small outline package
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E214129)
NoDPC-0000006
marking code diode Eb SMD
3H4 Photocoupler
smd marking TB
Photocoupler
marking code EA SMD 5 pins
3h4 3 pin
EL3H4A
EL3H4A eVERLIGHT
marking code EA SMD Transistor
E214129
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apm9946
Abstract: apm*9946 APM9946J ANPEC A102 A104 A108 B102 JESD-22
Text: APM9946J Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/6A, RDS ON =38mΩ (Typ.) @ VGS = 10V RDS(ON) =55mΩ (Typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of DIP−8 Lead Free and Green Devices Available
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APM9946J
APM9946
JESD-22,
apm9946
apm*9946
APM9946J
ANPEC
A102
A104
A108
B102
JESD-22
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VN3205
Abstract: No abstract text available
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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VN3205
MS-001,
DSFP-VN3205
A072507
VN3205
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25N03
Abstract: TSM25N03
Text: TAIW AN % TSM25N03 SEMICONDUCTOR 25V N-Channel MOSFET pbj RoHS CO M PLÌAN C E TO -252 PRODUCT SUMMARY Pin D efinition; 1. Gate 2. Drain Vos (V 3. S o u rc e €' * j r »m R D S (on)(m Q ) Id (A) 14 @ Vcs = 10V 25 19 @ V « » = 4 .5 V 25 25 i ì 23 Features
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TSM25N03
25N03
TSM25N03
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D July 1999 SEM IC O N D U C TO R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This
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FDG6301N
SC70-6
SC70-6
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pj 83 diode
Abstract: DIODE s2l S2L40U fly wheel
Text: Super Fast Recovery Diode Axial Diode OUTLINE S2L40U Unit : m m Package : AX10 W eight O .ffigiT yp 4 0 0 V 1.1 A 26.5 Feature • Low Noise • tnr=35ns • s v -rx • trr=35ns .1 • 7 5 'T / n - J b •iS te.F A - 2 - * tSAiiAihiiiHra M arking Main Use
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S2L40U
CJ533-1
pj 83 diode
DIODE s2l
S2L40U
fly wheel
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pin diagram of bf 494 transistor
Abstract: siemens products transistor
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability
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Q62702-F1721
SCT-595
200mA
pin diagram of bf 494 transistor
siemens products transistor
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