18BSC
Abstract: TSM25N03
Text: TSM25N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 14 @ VGS = 10V 25 19 @ VGS = 4.5V 25 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM25N03
O-252
TSM25N03CP
18BSC
TSM25N03
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TS13002
Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431
Text: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001
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TS1117
TS431
TS34063
TS78xx
TS494
TS9000
TS9006
TS13002
TS2576
TS317
TS39204
dvd smps
TS2596
TS34063
TSM2301
TS9007
TS431
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Untitled
Abstract: No abstract text available
Text: s TAIW AN TSM25N03 SEMICONDUCTOR 25V N-Channel MOSFET pbj RoHS C O M P L ÌA N C E TO -252 PRODUCT SUMMARY Pin D efinition; 1. Gate 2. Drain Vos (V 3. S o u rc e 25 ' m~wm Features R D S (on)(m Q ) Id (A) 14 @ Vcs = 10V 25 l9@ V e»=4.5V 25 Block Diagram
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TSM25N03
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25N03
Abstract: TSM25N03
Text: TAIW AN % TSM25N03 SEMICONDUCTOR 25V N-Channel MOSFET pbj RoHS CO M PLÌAN C E TO -252 PRODUCT SUMMARY Pin D efinition; 1. Gate 2. Drain Vos (V 3. S o u rc e €' * j r »m R D S (on)(m Q ) Id (A) 14 @ Vcs = 10V 25 19 @ V « » = 4 .5 V 25 25 i ì 23 Features
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TSM25N03
25N03
TSM25N03
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25N03
Abstract: TSM25N03 ve45 T0-252
Text: s TAIWAN SEMICONDUCTOR TSM25N03 25V N-Channel MOSFET pb RoHS C O M PLIA N C E TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain Vos (V) 3. Source 25 T T iT Features • • R D S (o n )(m Q ) Id (A) 14 @ Vos = 10V 25 19 @ V«»=4.5V 25 Block Diagram
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OCR Scan
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TSM25N03
TSM25NÃ
O-252
25N03
TSM25N03
ve45
T0-252
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