Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
Elpida LPDDR2 Memory
MT46H32M32LF
MT46H64M16LF
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ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4
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256Mb:
MT46H16M16LF
MT46H8M32LF
09005aef834bf85b
ELPIDA mobile dram LPDDR2
LPDDR2 SDRAM micron
infineon power cycling
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dad1000
Abstract: 1076-746c 1076-740c 1076-714c 8.2v zener diode DN marking 5 watt zener discovery dmd package 1076-7bbc
Text: Product Preview Data Sheet TI DN 2503686 February 2005 DMD 0.7 XGA 12º DDR DMD Discovery This data sheet describes the 0.7XGA 12º DDR DMD Discovery™. May not be reproduced without permission from Texas Instruments Incorporated Copyright 2005 Texas Instruments Incorporated
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dad1000
Abstract: dmd 20 1076-740c diode zener 27c BZD27C8V2P 1076-746c 1076-7bbc DMD/chip dmd ti
Text: Product Preview Data Sheet TI DN 2503686 August 30, 2005 DMD 0.7 XGA 12º DDR DMD Discovery This data sheet describes the 0.7XGA 12º DDR DMD Discovery™. May not be reproduced without permission from Texas Instruments Incorporated Copyright 2005 Texas Instruments Incorporated
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial MICRO SD Memory Card S-300u Series SPI, SD and SDHC compliant Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Swissbit reserves the right to change products or specifications without notice. www.swissbit.com industrial@swissbit.com
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S-300u
CH-9552
Rev100
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2Gb sd
Abstract: No abstract text available
Text: Product Data Sheet Industrial MICRO SD Memory Card S-300u Series SPI, SD and SDHC compliant Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Swissbit reserves the right to change products or specifications without notice. www.swissbit.com industrial@swissbit.com
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S-300u
CH-9552
Rev101
2Gb sd
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial MICRO SD Memory Card S-300u Series SPI, SD and SDHC compliant Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Swissbit reserves the right to change products or specifications without notice. www.swissbit.com industrial@swissbit.com
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S-300u
CH-9552
Rev101
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MD2103DFX
Abstract: ISOWATT218FX JESD97
Text: MD2103DFX High voltage NPN power transistor for standard definition CRT display General features • State-of-the-art technology: – Diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement
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MD2103DFX
2002/93/EC
ISOWATT218FX
MD2103DFX
ISOWATT218FX
JESD97
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ISO 11452-5
Abstract: No abstract text available
Text: KMA210 Programmable angle sensor Rev. 1 — 30 June 2011 Product data sheet 1. Product profile 1.1 General description The KMA210 is a magnetic angle sensor module. The MagnetoResistive MR sensor bridges, the mixed signal Integrated Circuit (IC) and the required capacitances are
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KMA210
KMA210
ISO 11452-5
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Untitled
Abstract: No abstract text available
Text: KMA210 Programmable angle sensor Rev. 2 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description The KMA210 is a magnetic angle sensor module. The MagnetoResistive MR sensor bridges, the mixed signal Integrated Circuit (IC) and the required capacitances are
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KMA210
KMA210
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KMA210
Abstract: No abstract text available
Text: KMA210 Programmable angle sensor Rev. 2 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description The KMA210 is a magnetic angle sensor module. The MagnetoResistive MR sensor bridges, the mixed signal Integrated Circuit (IC) and the required capacitances are
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KMA210
KMA210
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emmc spec CMD12
Abstract: M09P ENGcm07207 CMD GASKET ENGcm03648 ENGcm09460 TJA1041 MCIMX253DJM4 MCIMX251AJM4 MCIMX253CJM4
Text: Freescale Semiconductor Errata Document Number: IMX25CE Rev. 3, 07/2010 Chip Errata for the i.MX25 This document details all known silicon errata for the i.MX25. Table 1 provides a revision history for this document. Table 1. Document Revision History Rev.
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IMX25CE
ENGcm11122
ENGcm11270
ENGcm11409
MCIMX25
emmc spec CMD12
M09P
ENGcm07207
CMD GASKET
ENGcm03648
ENGcm09460
TJA1041
MCIMX253DJM4
MCIMX251AJM4
MCIMX253CJM4
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ISO 11452-5
Abstract: ISO 11452-2 kma199 ISO 11452-4 KMA199E AEC-Q100 mas sensor
Text: KMA199E Programmable angle sensor Rev. 01 — 18 October 2007 Product data sheet 1. Product profile 1.1 General description The KMA199E is a magnetic angle sensor system. The MagnetoResistive MR sensor bridges and the mixed signal Integrated Circuit (IC) are integrated into a single package.
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KMA199E
KMA199E
ISO 11452-5
ISO 11452-2
kma199
ISO 11452-4
AEC-Q100
mas sensor
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-40 Series SPI, SDHC compliant Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Swissbit reserves the right to change products or specifications without notice. www.swissbit.com industrial@swissbit.com
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CH-9552
Rev095
4/8/16/32GByte
FAT32
25MB/s
25MHz
50MHz
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Untitled
Abstract: No abstract text available
Text: KMA199E Programmable angle sensor Rev. 2 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description The KMA199E is a magnetic angle sensor system. The MagnetoResistive MR sensor bridges and the mixed signal Integrated Circuit (IC) are integrated into a single package.
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KMA199E
KMA199E
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KMA199E
Abstract: ISO 11452-4 ISO 11452-5 11452-2 ISO 11452-2 sot880 cordic design for fixed angle of rotation KMA199
Text: KMA199E Programmable angle sensor Rev. 2 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description The KMA199E is a magnetic angle sensor system. The MagnetoResistive MR sensor bridges and the mixed signal Integrated Circuit (IC) are integrated into a single package.
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KMA199E
KMA199E
ISO 11452-4
ISO 11452-5
11452-2
ISO 11452-2
sot880
cordic design for fixed angle of rotation
KMA199
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MK68000
Abstract: MK68564 txauto CRC-16 PLCC52 mk68564n
Text: MK68564 SERIAL INPUT OUTPUT . . . . . . . . . . . COMPATIBLE WITH MK68000 CPU COMPATIBLE WITH MK68000 SERIES DMA’s TWO INDEPENDENT FULL-DUPLEX CHANNELS TWO INDEPENDENT BAUD-RATE GENERATORS - Crystal oscillator input - Single-phase TTL clock input DIRECTLY ADDRESSABLE REGISTERS
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MK68564
MK68000
MK68564
txauto
CRC-16
PLCC52
mk68564n
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MK68000
Abstract: SDLC txauto MK68564 PLCC52 CRC-16
Text: MK68564 SERIAL INPUT OUTPUT . . . . . . . . . . . COMPATIBLE WITH MK68000 CPU COMPATIBLE WITH MK68000 SERIES DMA’s TWO INDEPENDENT FULL-DUPLEX CHANNELS TWO INDEPENDENT BAUD-RATE GENERATORS - Crystal oscillator input - Single-phase TTL clock input DIRECTLY ADDRESSABLE REGISTERS
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MK68564
MK68000
SDLC
txauto
MK68564
PLCC52
CRC-16
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS
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MT46H8M16LF
09005aef8199c1ec/Source:
09005aef81a19319
MT46H8M16LF
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MT46H8M16
Abstract: 8M16 MT46H8M16LF
Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • VDD/VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS
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128Mb:
MT46H8M16LF
refresh08-368-3900
09005aef8199c1ec/Source:
09005aef81a19319
MT46H8M16LF
MT46H8M16
8M16
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Marvell tQFP Package 128-pin
Abstract: Horizontal Transistor TT 2246 MV-S103921-00 circuit diagram laptop motherboard Transistor TT 2246 bt.656 cmos camera 113 marking code PNP transistor CON62 Samsung 256 Gbit nand
Text: Cover 88ALP01 PCI to NAND, SD and Camera Host Controller Datasheet Doc. No. MV-S103921-00, Rev. – July 17, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary Information 88ALP01 Datasheet Document Conventions Note: Provides related information or information of special importance.
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88ALP01
MV-S103921-00,
88ALP01
MV-S103921-00
Marvell tQFP Package 128-pin
Horizontal Transistor TT 2246
circuit diagram laptop motherboard
Transistor TT 2246
bt.656
cmos camera
113 marking code PNP transistor
CON62
Samsung 256 Gbit nand
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MT46H8M16LFB
Abstract: No abstract text available
Text: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8 ±0.1V, VDDQ = +1.8 ±0.1V • Bidirectional data strobe per byte of data DQS
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MT46H8M16LF
09005aef822b7e27/Source:
09005aef822b7dd6
MT46H8M16LFB
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HA 1156 R
Abstract: CMDZ10L CMDZ11L CMDZ12L CMDZ13L CMDZ15L CMDZ16L CMDZ18L CMDZ20L CMDZ22L
Text: Central" *F Semiconductor Corp. CMDZ5L1 THRU CMDZ36L LOW LEVEL ZENER DIODE 250mW, 5.1 VOLTS THRU 36 VOLTS SUPER mini DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMDZ5L1 Series Silicon Low Level Zener Diode is a high quality voltage regulator specifically designed for operation at 500|xA.
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CMDZ36L
250mW,
OD-323
CMDZ13L
CMDZ15L
CMDZ16L
CMDZ18L
CMDZ20L
CMDZ22L
CMDZ24L
HA 1156 R
CMDZ10L
CMDZ11L
CMDZ12L
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siemens Package Outlines P-LCC
Abstract: No abstract text available
Text: SIEMENS PEB 2055 PEF 2055 Electrical Characteristics 6 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol min. max. ta 70 85 ^stg -6 5 125 6C Vs vr max -0 .4 Vdd + 0-4 V 6 V T’a Storage temperature Maximum voltage on any pin Unit -4 0 Ambient temperature under bias: PEB
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0235fc
P-LCC-44-1
23Sfc
IA-BID122X
siemens Package Outlines P-LCC
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