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Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS
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MT46H8M16
Abstract: 8M16 MT46H8M16LF
Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • VDD/VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS
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Original
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128Mb:
MT46H8M16LF
refresh08-368-3900
09005aef8199c1ec/Source:
09005aef81a19319
MT46H8M16LF
MT46H8M16
8M16
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Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
09005aef8051ce4d/Source:
09005aef81a19319
MT46H8M16LF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
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Original
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PDF
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128Mb:
MT46H8M16LF
09005aef8199c1ec/Source:
09005aef81a19319
MT46H8M16LF
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