C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
|
Original
|
1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
|
PDF
|
BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
|
Original
|
1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
|
PDF
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
PDF
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
PDF
|
PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
|
Original
|
BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
|
PDF
|
BY228
Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Text: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1
|
Original
|
BY228
BYW56
OD-57
OD-64
26-Feb-10
BY228
diode SOD 64
BYW56
SOD-64
BYW56 V
SOD57
diode v
|
PDF
|
BYW56V
Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
Text: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors
|
Original
|
BYW56
BY228
DO-204AP
07-Jan-03
BYW56V
BYW56 v
BYW56
BY228
by228 v
VISHAY MARKING
vishay rectifiers
marking G3
marking G4
|
PDF
|
DIODE BZG 03c
Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.
|
Original
|
1N4148
BZX55C.
BZX85C.
OT143
OT143R
OT323
OT343
OT343R
OT363
DIODE BZG 03c
DIODE BZX 85c
marking code vishay label
1N4148 do214ac
KZE sot23
Vishay diodes code marking
1N47A
1N5 diode
1N52B
DIODE BZG
|
PDF
|
by228
Abstract: BY228 Diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high
|
Original
|
M3D118
BY228
BY228
mismatch\20000819\08182000\.
\BY228
BY228,
/\\Roarer\root\data13\imaging\BITTING\cpl
BY228 Diode
|
PDF
|
BY255 diode
Abstract: by255 diode BY255 diode BY255 dc by255 dc BY255-TB BY2551 BY255-T3 RS-296-E
Text: BY255 WTE POWER SEMICONDUCTORS Pb 3.0A HIGH VOLTAGE STANDARD DIODE Features !" Diffused Junction !" !" !" !" Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C !" Case: DO-201AD, Molded Plastic
|
Original
|
BY255
DO-201AD,
MIL-STD-202,
DO-201AD
BY255 diode
by255
diode BY255
diode BY255 dc
by255 dc
BY255-TB
BY2551
BY255-T3
RS-296-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY255 WTE POWER SEMICONDUCTORS Pb 3.0A HIGH VOLTAGE STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-201AD, Molded Plastic
|
Original
|
BY255
DO-201AD,
MIL-STD-202,
DO-201AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY255 3.0A HIGH VOLTAGE STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
|
Original
|
BY255
DO-201AD,
MIL-STD-202,
DO-201AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS BY228 STANDARD RECOVERY RECTIFIER MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test condition Symbol Value VR 1500 V IR = 100µA VRRM 1650 V tp = 10ms, half sinewave IFSM 50 A Reverse voltage Repetitive peak reverse voltage
|
Original
|
BY228
OD-64
MIL-PRF-19500,
|
PDF
|
BY268
Abstract: No abstract text available
Text: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass
|
Original
|
BY268
BY269
OD-57,
MIL-STD-202,
OD-57
470kHz
DS30035
|
PDF
|
|
|
Marking STMicroelectronics
Abstract: BY239L-800 stmicroelectronics
Text: BY239L-800 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter
|
Original
|
BY239L-800
O220AC
Marking STMicroelectronics
BY239L-800
stmicroelectronics
|
PDF
|
BY239L-800
Abstract: stmicroelectronics
Text: BY239L-800 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter
|
Original
|
BY239L-800
O220AC
BY239L-800
stmicroelectronics
|
PDF
|
BY214
Abstract: Marking STMicroelectronics BY214-400 by214400 BY214-600
Text: BY214-400 ->1000 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 6A VRRM 1000 V VF (max) 1.2 V STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP AG (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IF(AV) Parameter Average forward current *
|
Original
|
BY214-400
BY214
Marking STMicroelectronics
by214400
BY214-600
|
PDF
|
BY254
Abstract: No abstract text available
Text: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
|
Original
|
DO-201AD
BY251
BY254
MIL-STD-202,
260/10s
BY25X
300us
BY254
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
|
Original
|
BY251
BY254
DO-201AD
MIL-STD-202,
BY25X
Week25
300us
|
PDF
|
diode sy 160
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification Parallel efficiency diode FEATU RES BY228 Q U IC K R E F E R E N C E DATA • High reverse voltage capability with controlled recovery time. APPLICATIO N S • Efficiency diode in transistorized horizontal deflection circuits of
|
OCR Scan
|
BY228
diode sy 160
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY239L-800 _ RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS lF av 10 A V rrm 800 V V f (max) 1.45 V • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS (limiting values)
|
OCR Scan
|
BY239L-800
|
PDF
|
BY228
Abstract: SOD-64
Text: BY228 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The device features high reverse voltage capability with controlled recovery time.
|
OCR Scan
|
BY228
OD-64.
BY228.
SOD-64
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s BY251 - BY255 3.0 AMPS. Silicon Rectifiers RoHS DO-201 AD C O M P L IA N C E T — -. 197 IÎA . Features_ •fr ❖ ❖ <■ <• ❖ High efficiency, Low VF High current capability High reliability
|
OCR Scan
|
BY251
BY255
DO-201
33F70Î
BY255)
|
PDF
|
BY228
Abstract: modulator circuit
Text: N AMER PHI LIP S/ DI S CR ET E b^E D • bbSB'iBl GÜ2fai*Sfl ÖOS ■ APX BY228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television
|
OCR Scan
|
BY228
OD-64.
BY228.
7Z77828
7Z77829
BY228
modulator circuit
|
PDF
|
