ultrasonic water level sensor
Abstract: ultrasonic level transmitter LM90100 ultrasonic range cm level LM90-1001 water level controller with lcd display
Text: EchoSpan DS300350-REV:A TM Ultrasonic Level Transmitter Specifications Rear View Shown LU81: 8" to 16.4' 20 cm to 5m LU83: 8" to 26.2' (20 cm to 8m) LU84: 12" to 32.8' (30 cm to 10m) ± 0.2% of span in air Accuracy: LU81/83: 0.039" (1 mm) Resolution: LU84: 0.078" (2 mm)
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DS300350-REV
LU81/83:
LM90-1001
ultrasonic water level sensor
ultrasonic level transmitter
LM90100
ultrasonic range cm level
water level controller with lcd display
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Infrared Phototransistor
Abstract: QSB363 QEB363 QEB373
Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)
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QSB363
QSB363
DS300357
Infrared Phototransistor
QEB363
QEB373
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Infrared Phototransistor
Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)
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QSB363
QSB363
DS300357
Infrared Phototransistor
phototransistor 500-600 nm
QEB373
"infrared phototransistor"
all datasheet phototransistor
QEB363
npn phototransistor
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DS300359
Abstract: "Infrared photodarlington" QSC133
Text: PLASTIC SILICON INFRARED PHOTODARLINGTON QSC133 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94) 0.018 (0.46)
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QSC133
QSC133
DS300359
DS300359
"Infrared photodarlington"
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QRB1134
Abstract: QRB1133
Text: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRB1133 QRB1134 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 24.0 (609.60) MIN #26 AWG 0.150 (3.81) NOM (A) E (K) 0.226 (5.74) 0.373 (9.47) S (E) 0.703 (17.86) (C) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.300 (7.62) 0.603 (15.32)
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QRB1133
QRB1134
QRB1133/1134
DS300351
QRB1134
QRB1133
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BY268
Abstract: No abstract text available
Text: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass
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BY268
BY269
OD-57,
MIL-STD-202,
OD-57
470kHz
DS30035
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QECXXX
Abstract: QSC113 QSC114C QECXXX LED
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 QSC113 QSC114 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94)
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QSC112
QSC113
QSC114
QSC112/113/114
QSC114
QSC114C
QECXXX
QSC113
QECXXX LED
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BY268
Abstract: BY269
Text: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass
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BY268
BY269
OD-57
OD-57,
MIL-STD-202,
BY268
470kHz
DS30035
BY269
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phototransistor infrared
Abstract: No abstract text available
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 QSC113 QSC114 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94)
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QSC112
QSC113
QSC114
QSC112/113/114
QSC114
QSC114C
phototransistor infrared
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ADC14DS080
Abstract: ADC14DS080CISQ ADC14DS80
Text: ご注意：この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。
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ADC14DS080
80MSPS
ADC14DS080
80MSPS
ADC14DS80
ADC14DS080CISQ
ADC14DS80
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qrb1114
Abstract: QRB1113 phototransistor as sensor Reflective Optical Sensor focused
Text: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 PACKAGE DIMENSIONS 0.420 10.67 E 0.328 (8.33) S 0.150 (3.81) NOM PIN 1 E PIN 2 0.373 (9.47) 0.226 (5.74) S PIN 3 0.703 (17.86) PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) 0.300 (7.62) 0.210 (5.33)
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QRB1113
QRB1114
QRB1113/1114
DS300350
qrb1114
QRB1113
phototransistor as sensor
Reflective Optical Sensor focused
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QRC1133
Abstract: No abstract text available
Text: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRC1133 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 24.0 (609.60) MIN #26 AWG 0.150 (3.81) NOM (A) E (K) 0.226 (5.74) 0.373 (9.47) S (E) 0.703 (17.86) (C) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.300 (7.62) 0.603 (15.32)
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QRC1133
QRC1133
DS300353
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QRB1113
Abstract: QRB1114 Photo interrupter application notes
Text: QRB1113/1114 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS FEATURES • No contact surface sensing 0.420 10.67 • Phototransistor output 0.328 (8.33) • Focused for sensing specular reflection 0.150 (3.81) NOM PIN 1 • Daylight filter on photosensor
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QRB1113/1114
DS300350
QRB1113
QRB1114
Photo interrupter application notes
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OPTICAL INTERRUPTER
Abstract: QRC1113 4 pin phototransistor Photo interrupter application notes high sensitivity reflective photo interrupter
Text: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QRC1113 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 0.150 (3.81) NOM PIN 1 E PIN 2 0.373 (9.47) 0.226 (5.74) S PIN 3 0.703 (17.86) PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) 0.300 (7.62) 0.210 (5.33) REFLECTIVE
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QRC1113
QRC1113
DS300352
OPTICAL INTERRUPTER
4 pin phototransistor
Photo interrupter application notes
high sensitivity reflective photo interrupter
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ADC14DS080
Abstract: ADC14DS080CISQ ADC14DS80 sd0a
Text: ご注意：この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。
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ADC14DS080
80MSPS
ADC14DS080
80MSPS
ADC14DS80
ADC14DS080CISQ
ADC14DS80
sd0a
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